Abstract: A method for fabricating a mask for manufacturing a semiconductor device is provided. The method includes generating a first target pattern including a step portion having an inner corner and an outer corner that are spaced apart in a vertical direction; generating a second target pattern from the first target pattern; performing optical proximity correction on the second target pattern to generate a final pattern; and fabricating the mask using the final pattern. Generating the second target pattern includes forming a recess extending inwardly and in a diagonal direction relative to the inner corner of the step portion; and forming a protrusion protruding outwardly and in the diagonal direction relative to the outer corner of the step portion.

Abstract: A method for fabricating mask is provided. The method includes generating a second target pattern from a first target pattern, where the first target pattern includes first straight edges, and the second target pattern includes second straight edges and curved edges. Optical proximity correction is performed on the second target pattern to generating a mask pattern. The mask is fabricated using the mask pattern. Generating the second target pattern includes changing corner portions of the first target pattern into a curve to generate the curved edges.

Abstract: This invention relates to a method of manufacturing non-quenched and tempered steel having an ultrafine grained pearlite structure, including hot forging a steel material so as to be high-temperature compression deformed, thus obtaining a hot forged body; rapidly cooling the hot forged body to a low-temperature pearlite transformation range, thus obtaining a supercooled hot forged body; isothermally holding the supercooled hot forged body in the low-temperature pearlite transformation range so as to be isothermally transformed; and air-cooling the hot forged body; and to non-quenched and tempered steel manufactured thereby.