Patents by Inventor Joonhwa BAE

Joonhwa BAE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • DISPLAY DEVICE AND METHOD OF MANUFACTURING THE DISPLAY DEVICE
    Publication number: 20230138392
    Abstract: A display device and a method of manufacturing the display device are provided. The display device includes a substrate having a display area in which a plurality of pixels are arranged, a plurality of bank layers arranged on the substrate and defining opening areas respectively corresponding to the plurality of pixels, and a bank protection layer at an outermost portion of the plurality of bank layers.
    Type: Application
    Filed: October 27, 2022
    Publication date: May 4, 2023
    Inventors: Sukyeong Shin, Joonhwa Bae, Heesung Yang, Woojin Cho
  • DISPLAY APPARATUS AND METHOD OF PROVIDING THE SAME
    Publication number: 20230125691
    Abstract: A display apparatus includes a light-emitting element, an encapsulation layer covering the light-emitting element, a bank on the encapsulation layer and including an opening corresponding to the light-emitting element, and a quantum-dot layer in the opening of the bank. Roughness of a lower surface of the quantum-dot layer which is closest to the encapsulation layer is different from roughness of an upper surface of the quantum-dot layer which is furthest from the encapsulation layer.
    Type: Application
    Filed: May 18, 2022
    Publication date: April 27, 2023
    Inventors: Heesung Yang, Joonhwa Bae
  • Polishing slurry and method of polishing substrate by using the polishing slurry
    Patent number: 11203703
    Abstract: A polishing slurry includes an abrasive material, a first oxide polishing promoter, a first nitride polishing inhibitor, and a second nitride polishing inhibitor. The first oxide polishing promoter includes a polymer-based oxide polishing promoter. The first nitride polishing inhibitor includes an anionic nitride polishing inhibitor. The second nitride polishing inhibitor includes at least one selected from a cationic nitride polishing inhibitor and a non-ionic nitride polishing inhibitor.
    Type: Grant
    Filed: January 15, 2019
    Date of Patent: December 21, 2021
    Assignees: SAMSUNG DISPLAY CO., LTD., UB MATERIALS INC.
    Inventors: Hyunjin Cho, Joonhwa Bae, Byoungkwon Choo, Woojin Cho, Jinhyung Park
  • POLISHING SLURRY AND METHOD OF POLISHING SUBSTRATE BY USING THE POLISHING SLURRY
    Publication number: 20190292406
    Abstract: A polishing slurry includes an abrasive material, a first oxide polishing promoter, a first nitride polishing inhibitor, and a second nitride polishing inhibitor. The first oxide polishing promoter includes a polymer-based oxide polishing promoter. The first nitride polishing inhibitor includes an anionic nitride polishing inhibitor. The second nitride polishing inhibitor includes at least one selected from a cationic nitride polishing inhibitor and a non-ionic nitride polishing inhibitor.
    Type: Application
    Filed: January 15, 2019
    Publication date: September 26, 2019
    Inventors: Hyunjin CHO, Joonhwa BAE, Byoungkwon CHOO, Woojin CHO, Jinhyung PARK
  • Method of manufacturing thin film transistor, and method of manufacturing display apparatus
    Patent number: 9837316
    Abstract: A thin film transistor includes a polysilicon layer on a substrate, which includes a first area between second and third areas. A polysilicon layer is formed on the substrate, and a source electrode and a drain electrode are formed on the polysilicon layer in the first and third areas. Each of the source electrode and the drain electrode includes a metal silicide layer adjacent the polysilicon layer.
    Type: Grant
    Filed: December 2, 2016
    Date of Patent: December 5, 2017
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Jongchan Lee, Yoonho Khang, Myounghwa Kim, Joonhwa Bae, Myounggeun Cha
  • Method of manufacturing thin film transistor substrate, method of manufacturing display apparatus, thin film transistor substrate, and display apparatus
    Patent number: 9653292
    Abstract: A method of manufacturing a thin film transistor substrate includes forming an amorphous silicon layer on a substrate, the substrate having a rectangular shape, and irradiating the amorphous silicon layer with a laser beam at a random pitch, such that the amorphous silicon layer is crystallizes into a polycrystalline silicon layer, wherein the laser beam has a major axis and a minor axis, the major axis being non-parallel with respect to sides of the substrate.
    Type: Grant
    Filed: December 12, 2014
    Date of Patent: May 16, 2017
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Joonhwa Bae, Yoonho Khang
  • Thin film transistor substrate, display apparatus including the same, method of manufacturing thin film transistor substrate, and method of manufacturing display apparatus
    Patent number: 9647089
    Abstract: Thin film transistor substrate includes: a substrate; a crystalline silicon layer on the substrate; and a capping layer covering the crystalline silicon layer and including a first portion having a first thickness and a second portion having a second thickness that is greater than the first thickness.
    Type: Grant
    Filed: April 24, 2015
    Date of Patent: May 9, 2017
    Assignee: Samsung Display Co., Ltd.
    Inventors: Woonghee Jeong, Joonhwa Bae, Youngki Shin, Yoonho Khang
  • METHOD OF MANUFACTURING THIN FILM TRANSISTOR, AND METHOD OF MANUFACTURING DISPLAY APPARATUS
    Publication number: 20170084755
    Abstract: A thin film transistor includes a polysilicon layer on a substrate, which includes a first area between second and third areas. A polysilicon layer is formed on the substrate, and a source electrode and a drain electrode are formed on the polysilicon layer in the first and third areas. Each of the source electrode and the drain electrode includes a metal silicide layer adjacent the polysilicon layer.
    Type: Application
    Filed: December 2, 2016
    Publication date: March 23, 2017
    Inventors: Jongchan LEE, Yoonho KHANG, Myounghwa KIM, Joonhwa BAE, Myounggeun CHA
  • Thin film transistor, display apparatus comprising the same, method of manufacturing thin film transistor, and method of manufacturing display apparatus
    Patent number: 9515154
    Abstract: A thin film transistor includes a polysilicon layer on a substrate, which includes a first area between second and third areas. A polysilicon layer is formed on the substrate, and a source electrode and a drain electrode are formed on the polysilicon layer in the first and third areas. Each of the source electrode and the drain electrode includes a metal silicide layer adjacent the polysilicon layer.
    Type: Grant
    Filed: January 15, 2015
    Date of Patent: December 6, 2016
    Assignee: Samsung Display Co., Ltd.
    Inventors: Jongchan Lee, Yoonho Khang, Myounghwa Kim, Joonhwa Bae, Myounggeun Cha
  • THIN FILM TRANSISTOR SUBSTRATE, DISPLAY APPARATUS INCLUDING THE SAME, METHOD OF MANUFACTURING THIN FILM TRANSISTOR SUBSTRATE, AND METHOD OF MANUFACTURING DISPLAY APPARATUS
    Publication number: 20160104726
    Abstract: Thin film transistor substrate includes: a substrate; a crystalline silicon layer on the substrate; and a capping layer covering the crystalline silicon layer and including a first portion having a first thickness and a second portion having a second thickness that is greater than the first thickness.
    Type: Application
    Filed: April 24, 2015
    Publication date: April 14, 2016
    Inventors: Woonghee Jeong, Joonhwa Bae, Youngki Shin, Yoonho Khang
  • THIN FILM TRANSISTOR, DISPLAY APPARATUS COMPRISING THE SAME, METHOD OF MANUFACTURING THIN FILM TRANSISTOR, AND METHOD OF MANUFACTURING DISPLAY APPARATUS
    Publication number: 20160042959
    Abstract: A thin film transistor includes a polysilicon layer on a substrate, which includes a first area between second and third areas. A polysilicon layer is formed on the substrate, and a source electrode and a drain electrode are formed on the polysilicon layer in the first and third areas. Each of the source electrode and the drain electrode includes a metal silicide layer adjacent the polysilicon layer.
    Type: Application
    Filed: January 15, 2015
    Publication date: February 11, 2016
    Inventors: Jongchan LEE, Yoonho KHANG, Myounghwa KIM, Joonhwa BAE, Myounggeun CHA
  • METHOD OF MANUFACTURING THIN FILM TRANSISTOR SUBSTRATE, METHOD OF MANUFACTURING DISPLAY APPARATUS, THIN FILM TRANSISTOR SUBSTRATE, AND DISPLAY APPARATUS
    Publication number: 20160005600
    Abstract: A method of manufacturing a thin film transistor substrate includes forming an amorphous silicon layer on a substrate, the substrate having a rectangular shape, and irradiating the amorphous silicon layer with a laser beam at a random pitch, such that the amorphous silicon layer is crystallizes into a polycrystalline silicon layer, wherein the laser beam has a major axis and a minor axis, the major axis being non-parallel with respect to sides of the substrate.
    Type: Application
    Filed: December 12, 2014
    Publication date: January 7, 2016
    Inventors: Joonhwa BAE, Yoonho KHANG