Patents by Inventor JOONHYOUNG YANG

JOONHYOUNG YANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SAME
    Publication number: 20230260904
    Abstract: A semiconductor device includes; a semiconductor substrate including a first region and a second region, a first interlayer insulating layer on the second region, a capping layer disposed on the first interlayer insulating layer, an upper surface of the capping layer includes a first trench, conductive patterns spaced apart on the capping layer, side surfaces of the conductive patterns are aligned with inner side surfaces of the first trench, and a peripheral separation pattern disposed in the first trench to cover the side surfaces of the conductive patterns. The peripheral separation pattern has a first thickness on the side surfaces of the conductive patterns and a second thickness greater than or equal to the first thickness on a lower surface.
    Type: Application
    Filed: April 21, 2023
    Publication date: August 17, 2023
    Inventors: IN-HYUK CHOI, WONCHUL LEE, JOONHYOUNG YANG
  • Semiconductor device and method of fabricating same
    Patent number: 11670591
    Abstract: A semiconductor device includes; a semiconductor substrate including a first region and a second region, a first interlayer insulating layer on the second region, a capping layer disposed on the first interlayer insulating layer, an upper surface of the capping layer includes a first trench, conductive patterns spaced apart on the capping layer, side surfaces of the conductive patterns are aligned with inner side surfaces of the first trench, and a peripheral separation pattern disposed in the first trench to cover the side surfaces of the conductive patterns. The peripheral separation pattern has a first thickness on the side surfaces of the conductive patterns and a second thickness greater than or equal to the first thickness on a lower surface.
    Type: Grant
    Filed: August 17, 2021
    Date of Patent: June 6, 2023
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: In-Hyuk Choi, Wonchul Lee, Joonhyoung Yang
  • SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SAME
    Publication number: 20220262721
    Abstract: A semiconductor device includes; a semiconductor substrate including a first region and a second region, a first interlayer insulating layer on the second region, a capping layer disposed on the first interlayer insulating layer, an upper surface of the capping layer includes a first trench, conductive patterns spaced apart on the capping layer, side surfaces of the conductive patterns are aligned with inner side surfaces of the first trench, and a peripheral separation pattern disposed in the first trench to cover the side surfaces of the conductive patterns. The peripheral separation pattern has a first thickness on the side surfaces of the conductive patterns and a second thickness greater than or equal to the first thickness on a lower surface.
    Type: Application
    Filed: August 17, 2021
    Publication date: August 18, 2022
    Inventors: IN-HYUK CHOI, WONCHUL LEE, JOONHYOUNG YANG