Abstract: An image sensor pixel includes first, second and third PIN photodiodes having respective first, second and third widths, which are unequal to each other, and respective first, second and third absorption spectra associated therewith, which are unequal to each other. The first absorption spectra is a first linear combination of three color matching functions divided by a wavelength of light incident the image sensor, the second absorption spectra is a second linear combination of the three color matching functions divided by a wavelength of light incident the image sensor, and the third absorption spectra is a third linear combination of the three color matching functions divided by a wavelength of light incident the image sensor.

Abstract: An optical measurement device according to an aspect of the present disclosure includes a universal metasurface on which light is incident, a polarization sensor configured to measure a polarization state of light passing through the universal metasurface, and a controller configured to collect a quantitative differential interference contrast (QDIC) image for the x polarization of incident light that is collected by the polarization sensor, a QDIC image for y polarization, and a quantitative relative phase (QRP) image representing a relative phase difference between the x polarization and y polarization and configured to calculate intensity, a phase or polarization information of the incident light.

Abstract: A light sensing device includes a semiconductor layer including a distributed Bragg reflector including a first surface of the semiconductor layer, and a photoelectric conversion unit including a second surface of the semiconductor layer, and the distributed Bragg reflector has a plurality of holes each having, in a cross-sectional view, a width gradually changing from a first width to a second width according to a width change period; a first electrode in one region of the semiconductor layer; and a second electrode on the second surface of the semiconductor layer and having a reflective metal.

Abstract: A light sensing device includes a semiconductor layer including a distributed Bragg reflector including a first surface of the semiconductor layer, and a photoelectric conversion unit including a second surface of the semiconductor layer, and the distributed Bragg reflector has a plurality of holes each having, in a cross-sectional view, a width gradually changing from a first width to a second width according to a width change period; a first electrode in one region of the semiconductor layer; and a second electrode on the second surface of the semiconductor layer and having a reflective metal.

Abstract: An optical measurement device according to an aspect of the present disclosure includes a universal metasurface on which light is incident, a polarization sensor configured to measure a polarization state of light passing through the universal metasurface, and a controller configured to collect a quantitative differential interference contrast (QDIC) image for the x polarization of incident light that is collected by the polarization sensor, a QDIC image for y polarization, and a quantitative relative phase (QRP) image representing a relative phase difference between the x polarization and y polarization and configured to calculate intensity, a phase or polarization information of the incident light.

Abstract: A light sensing device includes a semiconductor layer including a distributed Bragg reflector including a first surface of the semiconductor layer, and a photoelectric conversion unit including a second surface of the semiconductor layer, and the distributed Bragg reflector has a plurality of holes each having, in a cross-sectional view, a width gradually changing from a first width to a second width according to a width change period; a first electrode in one region of the semiconductor layer; and a second electrode on the second surface of the semiconductor layer and having a reflective metal.