Abstract: A light sensing device includes a semiconductor layer including a distributed Bragg reflector including a first surface of the semiconductor layer, and a photoelectric conversion unit including a second surface of the semiconductor layer, and the distributed Bragg reflector has a plurality of holes each having, in a cross-sectional view, a width gradually changing from a first width to a second width according to a width change period; a first electrode in one region of the semiconductor layer; and a second electrode on the second surface of the semiconductor layer and having a reflective metal.

Abstract: An optical measurement device according to an aspect of the present disclosure includes a universal metasurface on which light is incident, a polarization sensor configured to measure a polarization state of light passing through the universal metasurface, and a controller configured to collect a quantitative differential interference contrast (QDIC) image for the x polarization of incident light that is collected by the polarization sensor, a QDIC image for y polarization, and a quantitative relative phase (QRP) image representing a relative phase difference between the x polarization and y polarization and configured to calculate intensity, a phase or polarization information of the incident light.

Abstract: A light sensing device includes a semiconductor layer including a distributed Bragg reflector including a first surface of the semiconductor layer, and a photoelectric conversion unit including a second surface of the semiconductor layer, and the distributed Bragg reflector has a plurality of holes each having, in a cross-sectional view, a width gradually changing from a first width to a second width according to a width change period; a first electrode in one region of the semiconductor layer; and a second electrode on the second surface of the semiconductor layer and having a reflective metal.