Patents by Inventor Joonseong Heo

Joonseong Heo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8946785
    Abstract: An ionic field effect transistor includes: a substrate; a polymer layer that is formed on the substrate and in which a first flow path and a second flow path that is separately disposed from the first flow path are formed; and a gate electrode that is formed between the substrate and the polymer layer and that contacts the first flow path and the second flow path, wherein a heterogeneous triangular nanochannel that connects the first flow path and the second flow path is formed between the gate electrode and the polymer layer.
    Type: Grant
    Filed: February 17, 2014
    Date of Patent: February 3, 2015
    Assignee: Postech Academy-Industry Foundation
    Inventors: Geunbae Lim, Sung Jae Kim, Bumjoo Kim, Joonseong Heo, Hyukjin J. Kwon
  • Publication number: 20140238521
    Abstract: An ionic field effect transistor includes: a substrate; a polymer layer that is formed on the substrate and in which a first flow path and a second flow path that is separately disposed from the first flow path are formed; and a gate electrode that is formed between the substrate and the polymer layer and that contacts the first flow path and the second flow path, wherein a heterogeneous triangular nanochannel that connects the first flow path and the second flow path is formed between the gate electrode and the polymer layer.
    Type: Application
    Filed: February 17, 2014
    Publication date: August 28, 2014
    Applicant: POSTECH ACADEMY-INDUSTRY FOUNDATION
    Inventors: Geunbae LIM, Sung-Jae Kim, Bumjoo Kim, Joonseong Heo, Hyukjin J. Kwon