Abstract: According to some example embodiments of the inventive concepts, there is provided a method of operating a stacked memory device including a plurality of memory dies stacked in a vertical direction, the method including receiving a command and an address from a memory controller, determining a stack ID indicating a subset of the plurality of memory dies by decoding the address, and accessing at least two memory dies among the subset of memory dies corresponding to the stack ID such that the at least two memory dies are non-adjacent.

Abstract: A semiconductor package includes a semiconductor package includes first, second, third and fourth semiconductor chips sequentially stacked on one another. Each of the first, second, third and fourth semiconductor chips includes a first group of bonding pads and a second group of bonding pads alternately arranged in a first direction and input/output (I/O) circuitry selectively connected to the first group of bonding pads respectively. Each of the first, second and third semiconductor chips includes a first group of through electrodes electrically connected to the first group of bonding pads and a second group of through electrodes electrically connected to the second group of bonding pads.

Abstract: According to some example embodiments of the inventive concepts, there is provided a method of operating a stacked memory device including a plurality of memory dies stacked in a vertical direction, the method including receiving a command and an address from a memory controller, determining a stack ID indicating a subset of the plurality of memory dies by decoding the address, and accessing at least two memory dies among the subset of memory dies corresponding to the stack ID such that the at least two memory dies are non-adjacent.

Abstract: According to some example embodiments of the inventive concepts, there is provided a method of operating a stacked memory device including a plurality of memory dies stacked in a vertical direction, the method including receiving a command and an address from a memory controller, determining a stack ID indicating a subset of the plurality of memory dies by decoding the address, and accessing at least two memory dies among the subset of memory dies corresponding to the stack ID such that the at least two memory dies are non-adjacent.

Abstract: According to some example embodiments of the inventive concepts, there is provided a method of operating a stacked memory device including a plurality of memory dies stacked in a vertical direction, the method including receiving a command and an address from a memory controller, determining a stack ID indicating a subset of the plurality of memory dies by decoding the address, and accessing at least two memory dies among the subset of memory dies corresponding to the stack ID such that the at least two memory dies are non-adjacent.

Abstract: Provided are methods of fabricating a semiconductor device. According to the method, a first glue layer, a first release layer, a second glue layer, and a second release layer may be sequentially interposed between a carrier and a device wafer. All of the first glue layer, the first release layer, the second glue layer, and the second release layer may be formed of thermosetting resin.

Abstract: Provided are methods of fabricating a semiconductor device. According to the method, a first glue layer, a first release layer, a second glue layer, and a second release layer may be sequentially interposed between a carrier and a device wafer. All of the first glue layer, the first release layer, the second glue layer, and the second release layer may be formed of thermosetting resin.

Abstract: A method for processing substrates includes providing a bonding layer between a substrate and a carrier to bond the substrate to the carrier, processing the substrate while the substrate is supported by the carrier, and removing the bonding layer to separate the substrate from the carrier. The bonding layer may include a thermosetting release layer and thermosetting glue layers, wherein at least one of the thermosetting glue layers is provided on each side of the thermosetting release layer.

Abstract: A method for processing substrates includes providing a bonding layer between a substrate and a carrier to bond the substrate to the carrier, processing the substrate while the substrate is supported by the carrier, and removing the bonding layer to separate the substrate from the carrier. The bonding layer may include a thermosetting release layer and thermosetting glue layers, wherein at least one of the thermosetting glue layers is provided on each side of the thermosetting release layer.

Abstract: A method for processing substrates includes providing a bonding layer between a substrate and a carrier to bond the substrate to the carrier, processing the substrate while the substrate is supported by the carrier, and removing the bonding layer to separate the substrate from the carrier. The bonding layer may include a thermosetting release layer and thermosetting glue layers, wherein at least one of the thermosetting glue layers is provided on each side of the thermosetting release layer.

Abstract: A method for processing substrates includes providing a bonding layer between a substrate and a carrier to bond the substrate to the carrier, processing the substrate while the substrate is supported by the carrier, and removing the bonding layer to separate the substrate from the carrier. The bonding layer may include a thermosetting release layer and thermosetting glue layers, wherein at least one of the thermosetting glue layers is provided on each side of the thermosetting release layer.