Abstract: Various embodiments relate to an optical detection element and GOI (Ge-on-insulator) device for ultra-small on-chip optical sensing, and a manufacturing method of the same. According to various embodiments, the optical detection element and the GOI device may be implemented on a GOI structure comprising a germanium (Ge) layer, and the GOI device may be implemented to have an optical detection element. Specifically, the GOI device may include a GOI structure with a waveguide region comprising a germanium layer, a light source element configured to generate light for the waveguide region, and at least one optical detection element configured to detect light coming from the waveguide region. At least one slot configured to collect light from the light source element may be formed in the germanium layer in the waveguide region. The light source element may generate light so as to be coupled to the germanium layer in the waveguide region.

Abstract: An optical device can include an end-fire optical phased array including an optical splitter to split an optical signal into a plurality of channels, an optical phase controller to control a phase of the optical signal transmitted from the optical splitter, and an end-fire optical radiator to radiate the optical signal transmitted from the optical phase controller. A lens can be further positioned on a path of the radiated optical signal to control a vertical divergence angle of the radiated optical signal.

Abstract: Various embodiments relate to an optical detection element and GOI (Ge-on-insulator) device for ultra-small on-chip optical sensing, and a manufacturing method of the same. According to various embodiments, the optical detection element and the GOI device may be implemented on a GOI structure comprising a germanium (Ge) layer, and the GOI device may be implemented to have an optical detection element. Specifically, the GOI device may include a GOI structure with a waveguide region comprising a germanium layer, a light source element configured to generate light for the waveguide region, and at least one optical detection element configured to detect light coming from the waveguide region. At least one slot configured to collect light from the light source element may be formed in the germanium layer in the waveguide region. The light source element may generate light so as to be coupled to the germanium layer in the waveguide region.

Abstract: A device system for constituting a 3D image sensor based on optical phased array is provided. The device system includes an optical modulator that is integrated on the same photonic integrated circuit (PIC) chip as a laser diode array with different output wavelengths and a multiplexer for transmitting an optical wave having a wavelength selected from the laser diode array to an optical waveguide and modulates the optical wave into a specific optical signal, an optical phased array that radiates the optical signal received via an optical switch to the free space using a tunable transmit and receive (TRx) antenna array, and a photodetector that converts an Rx optical signal received by a Tx optical signal transmitted via the optical phased array into an electrical signal.

Abstract: A device system for constituting a 3D image sensor based on optical phased array is provided. The device system includes an optical modulator that is integrated on the same photonic integrated circuit (PIC) chip as a laser diode array with different output wavelengths and a multiplexer for transmitting an optical wave having a wavelength selected from the laser diode array to an optical waveguide and modulates the optical wave into a specific optical signal, an optical phased array that radiates the optical signal received via an optical switch to the free space using a tunable transmit and receive (TRx) antenna array, and a photodetector that converts an Rx optical signal received by a Tx optical signal transmitted via the optical phased array into an electrical signal.