Abstract: Disclosed is an apparatus for continuous spinning of coagulative polymeric microfibers comprising an outer microcatheter, an inner microcatheter having a smaller diameter than the outer microcatheter and inserted inside the outer microcatheter, a double lumen part in which the outer microcatheter and the inner microcatheter are coaxially superimposed with a radially spaced interstitial space, and a single lumen part formed by the outer microcatheter from an end of the inner microcatheter to an end of the outer microcatheter. A core fluid supplied through an interior of the inner microcatheter comprises a coagulative polymeric fluid, and a sheath fluid supplied through the interstitial space comprises a fluid including saline, wherein the core fluid and the sheath fluid may be configured to flow coaxially in the single lumen part to generate and discharge a coagulative polymeric microfiber.

Abstract: Disclosed is an apparatus for continuous spinning of coagulative polymeric microfibers comprising an outer microcatheter, an inner microcatheter having a smaller diameter than the outer microcatheter and inserted inside the outer microcatheter, a double lumen part in which the outer microcatheter and the inner microcatheter are coaxially superimposed with a radially spaced interstitial space, and a single lumen part formed by the outer microcatheter from an end of the inner microcatheter to an end of the outer microcatheter. A core fluid supplied through an interior of the inner microcatheter comprises a coagulative polymeric fluid, and a sheath fluid supplied through the interstitial space comprises a fluid including saline, wherein the core fluid and the sheath fluid may be configured to flow coaxially in the single lumen part to generate and discharge a coagulative polymeric microfiber.

Abstract: Provided is an etchant composition for a silicon nitride film, and more particularly, to an etchant composition with a high selectivity to a silicon nitride film, which is used to etch away a silicon nitride film in semiconductor process and which selectively has a high etching rate for the silicon nitride film compared to a silicon oxide film in a high temperature etch process, in which the etchant composition with the high selectivity selectively etches the silicon nitride film at a selectivity of 2000:1 or higher between the silicon nitride film and the silicon oxide film which are in a stack structure, and minimizes damages to the silicon oxide film and etching rate, and does not cause re-growth of the silicon oxide film over the process time.

Abstract: Provided is an etchant composition for a silicon nitride film, and more particularly, to an etchant composition with a high selectivity to a silicon nitride film, which is used to etch away a silicon nitride film in semiconductor process and which selectively has a high etching rate for the silicon nitride film compared to a silicon oxide film in a high temperature etch process, in which the etchant composition with the high selectivity selectively etches the silicon nitride film at a selectivity of 2000:1 or higher between the silicon nitride film and the silicon oxide film which are in a stack structure, and minimizes damages to the silicon oxide film and etching rate, and does not cause re-growth of the silicon oxide film over the process time.

Abstract: A UV curing resin injection apparatus for treating an aneurysm, includes a catheter, a light transmission tube disposed at an inner side of the catheter to transmit UV light, and a connection tube disposed at the inner side of the catheter to be spaced from the light transmission tube and configured to transfer a UV curing resin, wherein the light transmission tube is formed independently from the connection tube.

Abstract: A semiconductor package and a method for manufacturing the same. The semiconductor package includes a substrate having connection pads formed on one surface thereof, a semiconductor chip having bonding pads formed on one surface thereof to correspond to the connection pads; bumps for electrically connecting the connection pads and the bonding pads with each other, a coating layer located on exposed surface portions of the bonding pads and the connection pads to prevent voids from being formed in spaces between the substrate and the semiconductor chip, and an underfill member filled in the spaces over the coating layer.

Abstract: A semiconductor package and a method for manufacturing the same. The semiconductor package includes a substrate having connection pads formed on one surface thereof, a semiconductor chip having bonding pads formed on one surface thereof to correspond to the connection pads; bumps for electrically connecting the connection pads and the bonding pads with each other, a coating layer located on exposed surface portions of the bonding pads and the connection pads to prevent voids from being formed in spaces between the substrate and the semiconductor chip, and an underfill member filled in the spaces over the coating layer.