Abstract: The present invention pertains to a spin coating composition comprising a carbon material and a metal organic compound. The invention also pertains to a method of using the same to form a metal oxide film above a substrate and manufacturing a device.

Abstract: The invention relates to an antireflective coating composition comprising a crosslinker and a crosslinkable polymer capable of being crosslinked by the crosslinker, where the crosslinkable polymer comprises a unit represented by structure (1): ?A-B—C???(1) where A is a fused aromatic ring, B has a structure (2), and C is a hydroxybiphenyl of structure (3) where R1 is C1-C4alkyl and R2 is C1-C4alkyl. The invention further relates to a process for forming an image using the composition.

Abstract: A novel antireflective coating composition is provided, said antireflective coating composition comprising a) a compound of formula 1, b) a thermal acid generator, (c) at least one polymer, wherein U1 and U2 are independently a C1-C10 alkylene group; V is selected from a C1-C10 alkylene, arylene and aromatic alkylene; W is selected from H, C1-C10 alkyl, aryl, alkylaryl and V—OH; Y is selected from H, W, and U3C(O)OW, wherein U3 is independently a C1-C10 alkylene group, and m is 1 to 10. Also provided are methods using said compositions as antireflective coatings for substrates in lithographic processes.

Abstract: Antireflective coating compositions are discussed.

Abstract: A method for forming a metal wiring of a semiconductor device. The method includes forming an etch stop layer on a semiconductor substrate, forming a first inter metal dielectric on the etch stop layer, and forming a second inter metal dielectric on the first inter metal dielectric. The method also includes forming a first photoresist pattern defining a via hole on the second inter metal dielectric, forming a via hole exposing the etch stop layer using the first photo resist pattern, and forming a second photoresist pattern defining a trench by exposing and developing the first photoresist pattern. The method further includes forming a trench by etching the second inter metal dielectric using the second photoresist pattern as a mask, removing the etch stop layer exposed through the via hole, and forming a metal wiring by filling the via hole and the trench.

Abstract: The present invention relates to a photosensitive resin composition for use as a photoresist, and more particularly, to a photosensitive resin composition for a photoresist comprising an acrylate copolymer obtained by selectively using specific compounds or controlling the ratio of unreacted monomers, and a 1,2-quinonediazide compound, which is excellent in several performance factors such as dielectric characteristics, flatness, transparency, developing performance, residual film rate, chemical resistance, and heat resistance, as well as sensitivity and resolution, and in particular it facilitates easy pattern formation into interlayer dielectrics, and it can be used as a photoresist in an LCD manufacturing process due to its excellent transmissivity even when prepared as a thick film.

Abstract: A method for forming a metal wiring of a semiconductor device. The method includes forming an etch stop layer on a semiconductor substrate, forming a first inter metal dielectric on the etch stop layer, and forming a second inter metal dielectric on the first inter metal dielectric. The method also includes forming a first photoresist pattern defining a via hole on the second inter metal dielectric, forming a via hole exposing the etch stop layer using the first photo resist pattern, and forming a second photoresist pattern defining a trench by exposing and developing the first photoresist pattern. The method further includes forming a trench by etching the second inter metal dielectric using the second photoresist pattern as a mask, removing the etch stop layer exposed through the via hole, and forming a metal wiring by filling the via hole and the trench.

Abstract: The present invention relates to an LCD circuit photoresist composition for manufacturing fine circuit patterns on liquid crystal display circuits or semiconductor integrated circuits, and more particularly, and LCD circuit photoresist composition including (a) mixed polymer resins comprising a novolak resin with a molecular weight ranging from 3,000 to 9,000 and a fractionated novolak resin with a molecular weight ranging from 3,500 to 10,000; (b) a diazide-type photosensitive compound; (c) a photosensitizer; and (d) organic solvents. An LCD circuit photoresist composition of the present invention has excellent photosensitivity, retention ratio, resolution, contrast, heat resistance, adhesion, and stripper solubility, thus this photoresist composition can be easily applied to industrial work places for better working environments.

Abstract: The present invention relates to a positive photosensitive resin composition for use in an LCD manufacturing process, and more particularly, to a composition comprising an alkali-soluble resin and novel quinonediazide sulfonic ester compound that has excellent development properties, leaves little residue, and has good chemical resistance, etc, and is also easily patterned and has high transmissivity, and thus is suitable for forming inter-insulating layers in LCDs and in integrated circuit devices.

Abstract: The present invention relates to a photosensitive resin composition for use as a photoresist, and more particularly, to a photosensitive resin composition for a photoresist comprising an acrylate copolymer obtained by selectively using specific compounds or controlling the ratio of unreacted monomers, and a 1,2-quinonediazide compound, which is excellent in several performance factors such as dielectric characteristics, flatness, transparency, developing performance, residual film rate, chemical resistance, and heat resistance, as well as sensitivity and resolution, and in particular it facilitates easy pattern formation into interlayer dielectrics, and it can be used as a photoresist in an LCD manufacturing process due to its excellent transmissivity even when prepared as a thick film.