Patents by Inventor Joon-Yong Kim
Joon-Yong Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11986523Abstract: Disclosed is a stable liquid formulation, comprising an antibody or antigen-binding portion thereof, an acetate buffer, glycine, and a surfactant, wherein the stable liquid formulation does not comprise at least one of sugar, a sugar alcohol and a metal salt, and the stable liquid formulation is still stable even upon high antibody content, and is superior in osmolality and viscosity, and subcutaneous administration thereof is possible.Type: GrantFiled: March 16, 2021Date of Patent: May 21, 2024Assignee: CELLTRION INC.Inventors: Joon Won Lee, Yeon Kyeong Shin, Hye Young Kang, Kwang Woo Kim, So Young Kim, Su Jung Kim, Jun Seok Oh, Won Yong Han
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Publication number: 20240124404Abstract: The present invention relates to a composition for preventing, improving, or treating diseases related to advanced glycation end products, comprising an indole derivative or a pharmaceutically acceptable salt thereof. Specifically, the composition of the present invention possesses the effect of trapping methylglyoxal (MGO), which is a main precursor of advanced glycation end products, and thus can be effectively used for preventing, improving, or treating diseases related to advanced glycation end products.Type: ApplicationFiled: December 11, 2023Publication date: April 18, 2024Inventors: Seung Yong SEO, San Ha LEE, Jung Eun LEE, Joon Seong HUR, Sang Il KWON, Sun Yeou KIM, Seong Min HONG, Min Cheol KANG, Myoung Gyu PARK, Eun Joo LEE
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Publication number: 20240124399Abstract: The present invention relates to a novel indole derivative and a use thereof. The novel indole derivative according to the present invention traps methylglyoxal (MGO), which is a main precursor of advanced glycation end products, and thus can be effectively used for preventing, improving, or treating diseases related to advanced glycation end products.Type: ApplicationFiled: December 11, 2023Publication date: April 18, 2024Inventors: Seung Yong SEO, San Ha LEE, Jung Eun LEE, Joon Seong HUR, Sang Il KWON, Sun Yeou KIM, Seong Min HONG, Min Cheol KANG, Myoung Gyu PARK, Eun Joo LEE
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Publication number: 20240121996Abstract: A display device is provided. The display device includes a substrate including a display area and a pad area, which is disposed on one side of the display area, a plurality of conductive layers disposed on the substrate, in the display area and the pad area, a passivation layer disposed on the conductive layers, and a plurality of light-emitting elements disposed on the passivation layer, in the display area, and spaced apart from one another, wherein at least one of the conductive layers includes a first metal layer, a second metal layer, which is disposed on the first metal layer, and a third metal layer, which is disposed on the second metal layer, the first metal layer includes vanadium (V), the second metal layer includes aluminum (Al) or an Al alloy, and the third metal layer includes V or titanium (Ti).Type: ApplicationFiled: July 31, 2023Publication date: April 11, 2024Inventors: Hyun Eok SHIN, Sang Gab KIM, Joon Yong PARK, Do Keun SONG, Su Kyoung YANG, Dong Min LEE
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Patent number: 11951207Abstract: The present invention provides a stable liquid pharmaceutical formulation containing: an antibody or its antigen-binding fragment; a surfactant; a sugar or its derivative; and a buffer. The stable liquid pharmaceutical formulation according to the present invention has low viscosity while containing a high content of the antibody, has excellent long-term storage stability based on excellent stability under accelerated conditions and severe conditions, and may be administered subcutaneously.Type: GrantFiled: June 28, 2017Date of Patent: April 9, 2024Assignee: Celltrion Inc.Inventors: Joon Won Lee, Won Yong Han, Su Jung Kim, Jun Seok Oh, So Young Kim, Su Hyeon Hong, Yeon Kyeong Shin
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Patent number: 11955625Abstract: Provided are a negative electrode active material including a three-dimensional composite. The three-dimensional composite includes secondary particles containing a silicon carbide-based (SiCx, 0<x?1) nanosheet having a bent portion and amorphous carbon. Also provided are a method of producing the same, and a negative electrode and a lithium secondary battery including the negative electrode active material.Type: GrantFiled: August 20, 2021Date of Patent: April 9, 2024Assignees: SK On Co., Ltd., UNIST (Ulsan National Institute of Science and Technology)Inventors: Eunjun Park, Joon-Sup Kim, Jaekyung Sung, Yoon Kwang Lee, Tae Yong Lee, Jae Phil Cho
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Publication number: 20240099114Abstract: A display device may include a first electrode, a second electrode, an emission layer, an intervening layer, and a first encapsulation layer. The second electrode may overlap the first electrode. The emission layer may be disposed between the first electrode and the second electrode, may overlap the first electrode, and may include a light emitting material. The intervening layer may directly contact the second electrode, may be spaced from each of the first electrode and the emission layer, and may include a fluorine compound. A first section of the first encapsulation layer may overlap the emission layer. The intervening layer may be positioned between the second electrode and a second section of the first encapsulation layer.Type: ApplicationFiled: November 24, 2023Publication date: March 21, 2024Inventors: Jae Sik KIM, Jae Ik KIM, Jung Sun PARK, Seung Yong SONG, Duck Jung LEE, Yeon Hwa LEE, Joon Gu LEE, Kyu Hwan HWANG
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Publication number: 20240069028Abstract: Provided are biomarkers for predicting the prognosis of cervical cancer. In the case of using the biomarkers of the present disclosure, it is possible to select patients into a high-risk group, an intermediate-risk group, or a low-risk group, and thus, it is possible to provide tailored treatment for each patient according to prognosis prediction.Type: ApplicationFiled: August 23, 2023Publication date: February 29, 2024Applicant: INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITYInventors: Hanbyoul Cho, Jae-Hoon Kim, Joon-Yong Chung, Hee Yun, Gwan Hee Han, Hye Rim Kim
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Patent number: 9532866Abstract: An acellular dermal graft is provided. The acellular dermal graft may be useful in minimizing side effects caused after transplantation since an environment favorable for formation of new blood vessels and proliferation of autologous tissues is provided by forming a multi-penetration structure in an acellular dermal tissue, removing a basement membrane layer and/or subjecting corners to slope cutting, and transplantation is stably performed within a short transplantation time due to improved extensibility and flexibility of tissues. The acellular dermal graft may be useful in reducing a time required to recover tissues after transplantation since the transplantation is stably performed due to improved grafting reaction with a host tissue by enhancing uptake of fibroblasts and promoting angiogenic activities.Type: GrantFiled: September 11, 2014Date of Patent: January 3, 2017Assignee: L&C BIO CO., LTD.Inventors: Joon Yong Kim, Byung Moo Kim, Yong Sup Hwang, Whan Chul Lee, Soo Jeong Seo, Ju Hee Lee, Hyung Gu Kim
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Patent number: 9461637Abstract: According to example embodiments, a method for controlling a gate voltage applied to a gate electrode of a high electron mobility transistor (HEMT) may include measuring a voltage between a drain electrode and a source electrode of the HEMT, and adjusting a level of the gate voltage applied to the gate electrode of the HEMT according to the measured voltage. The level of the gate electrode may be adjusted if the voltage between the drain electrode and the source electrode is different than a set value.Type: GrantFiled: December 16, 2013Date of Patent: October 4, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Sun-kyu Hwang, Woo-chul Jeon, Joon-yong Kim, Ki-yeol Park, Young-hwan Park, Jai-kwang Shin, Jae-joon Oh, Jong-bong Ha
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Patent number: 9231093Abstract: A high electron mobility transistor (HEMT) according to example embodiments includes a channel layer, a channel supply layer on the channel layer, a source electrode and a drain electrode on at least one of the channel layer and the channel supply layer, a gate electrode between the source electrode and the drain electrode, and a Schottky electrode forming a Schottky contact with the channel supply layer. An upper surface of the channel supply layer may define a Schottky electrode accommodation unit. At least part of the Schottky electrode may be in the Schottky electrode accommodation unit. The Schottky electrode is electrically connected to the source electrode.Type: GrantFiled: March 14, 2013Date of Patent: January 5, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Woo-chul Jeon, Kyoung-yeon Kim, Jong-seob Kim, Joon-yong Kim, Ki-yeol Park, Young-hwan Park, Jai-kwang Shin, Jae-joon Oh, Hyuk-soon Choi, Jong-bong Ha, Sun-kyu Hwang, In-jun Hwang
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Patent number: 9117890Abstract: According to example embodiments, a HEMT includes a channel supply layer on a channel layer, a p-type semiconductor structure on the channel supply layer, a gate electrode on the p-type semiconductor structure, and source and drain electrodes spaced apart from two sides of the gate electrode respectively. The channel supply layer may have a higher energy bandgap than the channel layer. The p-type semiconductor structure may have an energy bandgap that is different than the channel supply layer. The p-type semiconductor structure may include a hole injection layer (HIL) on the channel supply layer and be configured to inject holes into at least one of the channel layer and the channel supply in an on state. The p-type semiconductor structure may include a depletion forming layer on part of the HIL. The depletion forming layer may have a dopant concentration that is different than the dopant concentration of the HIL.Type: GrantFiled: June 5, 2013Date of Patent: August 25, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Jong-seob Kim, Kyoung-yeon Kim, Joon-yong Kim, Jai-kwang Shin, Jae-joon Oh, Hyuk-soon Choi, Jong-bong Ha, Sun-kyu Hwang, In-jun Hwang
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Publication number: 20150057751Abstract: An acellular dermal graft is provided. The acellular dermal graft may be useful in minimizing side effects caused after transplantation since an environment favorable for formation of new blood vessels and proliferation of autologous tissues is provided by forming a multi-penetration structure in an acellular dermal tissue, removing a basement membrane layer and/or subjecting corners to slope cutting, and transplantation is stably performed within a short transplantation time due to improved extensibility and flexibility of tissues. The acellular dermal graft may be useful in reducing a time required to recover tissues after transplantation since the transplantation is stably performed due to improved grafting reaction with a host tissue by enhancing uptake of fibroblasts and promoting angiogenic activities.Type: ApplicationFiled: September 11, 2014Publication date: February 26, 2015Inventors: Joon Yong KIM, Byung Moo KIM, Yong Sup HWANG, Whan Chul LEE, Soo Jeong SEO, Ju Hee LEE, Hyung Gu KIM
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Patent number: 8890212Abstract: According to example embodiments, a normally-off high electron mobility transistor (HEMT) includes: a channel layer having a first nitride semiconductor, a channel supply layer on the channel layer, a source electrode and a drain electrode at sides of the channel supply layer, a depletion-forming layer on the channel supply layer, a gate insulating layer on the depletion-forming layer, and a gate electrode on the gate insulation layer. The channel supply layer includes a second nitride semiconductor and is configured to induce a two-dimensional electron gas (2DEG) in the channel layer. The depletion-forming layer is configured has at least two thicknesses and is configured to form a depletion region in at least a partial region of the 2DEG. The gate electrode contacts the depletion-forming layer.Type: GrantFiled: May 1, 2013Date of Patent: November 18, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Woo-chul Jeon, Young-hwan Park, Jae-joon Oh, Kyoung-yeon Kim, Joon-yong Kim, Ki-yeol Park, Jai-kwang Shin, Sun-kyu Hwang
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Publication number: 20140240026Abstract: According to example embodiments, a method for controlling a gate voltage applied to a gate electrode of a high electron mobility transistor (HEMT) may include measuring a voltage between a drain electrode and a source electrode of the HEMT, and adjusting a level of the gate voltage applied to the gate electrode of the HEMT according to the measured voltage. The level of the gate electrode may be adjusted if the voltage between the drain electrode and the source electrode is different than a set value.Type: ApplicationFiled: December 16, 2013Publication date: August 28, 2014Applicant: Samsung Electronics Co., Ltd.Inventors: Sun-kyu HWANG, Woo-chul JEON, Joon-yong KIM, Ki-yeol PARK, Young-hwan PARK, Jai-kwang SHIN, Jae-joon OH, Jong-bong HA
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Patent number: 8715162Abstract: Disclosed is a method for complex phalloplasty for widening a penis, using a circumcised foreskin as an autologous graft. In the method, a foreskin cut off by circumcision, conventionally discarded as waste, is implanted as an autograft in phalloplasty, whereby the penis can be widened.Type: GrantFiled: July 18, 2012Date of Patent: May 6, 2014Inventor: Joon-Yong Kim
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Publication number: 20140097470Abstract: According to example embodiments, a HEMT includes a channel supply layer on a channel layer, a p-type semiconductor structure on the channel supply layer, a gate electrode on the p-type semiconductor structure, and source and drain electrodes spaced apart from two sides of the gate electrode respectively. The channel supply layer may have a higher energy bandgap than the channel layer. The p-type semiconductor structure may have an energy bandgap that is different than the channel supply layer. The p-type semiconductor structure may include a hole injection layer (HIL) on the channel supply layer and be configured to inject holes into at least one of the channel layer and the channel supply in an on state. The p-type semiconductor structure may include a depletion forming layer on part of the HIL. The depletion forming layer may have a dopant concentration that is different than the dopant concentration of the HIL.Type: ApplicationFiled: June 5, 2013Publication date: April 10, 2014Inventors: Jong-seob KIM, Kyoung-yeon KIM, Joon-yong KIM, Jai-kwang SHIN, Jae-joon OH, Hyuk-soon CHOI, Jong-bong HA, Sun-kyu HWANG, In-jun HWANG
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Publication number: 20140091363Abstract: According to example embodiments, a normally-off high electron mobility transistor (HEMT) includes: a channel layer having a first nitride semiconductor, a channel supply layer on the channel layer, a source electrode and a drain electrode at sides of the channel supply layer, a depletion-forming layer on the channel supply layer, a gate insulating layer on the depletion-forming layer, and a gate electrode on the gate insulation layer. The channel supply layer includes a second nitride semiconductor and is configured to induce a two-dimensional electron gas (2DEG) in the channel layer. The depletion-forming layer is configured has at least two thicknesses and is configured to form a depletion region in at least a partial region of the 2DEG. The gate electrode contacts the depletion-forming layer.Type: ApplicationFiled: May 1, 2013Publication date: April 3, 2014Applicant: Samsung Electronics Co., Ltd.Inventors: Woo-chul JEON, Young-hwan PARK, Jae-joon OH, Kyoung-yeon KIM, Joon-yong KIM, Ki-yeol PARK, Jai-kwang SHIN, Sun-kyu HWANG
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Publication number: 20140024888Abstract: Disclosed is a method for complex phalloplasty for widening a penis, using a circumcised foreskin as an autologous graft. In the method, a foreskin cut off by circumcision, conventionally discarded as waste, is implanted as an autograft in phalloplasty, whereby the penis can be widened.Type: ApplicationFiled: July 18, 2012Publication date: January 23, 2014Inventor: Joon-Yong KIM
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Publication number: 20140021511Abstract: A high electron mobility transistor (HEMT) according to example embodiments includes a channel layer, a channel supply layer on the channel layer, a source electrode and a drain electrode on at least one of the channel layer and the channel supply layer, a gate electrode between the source electrode and the drain electrode, and a Schottky electrode forming a Schottky contact with the channel supply layer. An upper surface of the channel supply layer may define a Schottky electrode accommodation unit. At least part of the Schottky electrode may be in the Schottky electrode accommodation unit. The Schottky electrode is electrically connected to the source electrode.Type: ApplicationFiled: March 14, 2013Publication date: January 23, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Woo-chul JEON, Kyoung-yeon KIM, Jong-seob KIM, Joon-yong KIM, Ki-yeol PARK, Young-hwan PARK, Jai-kwang SHIN, Jae-joon OH, Hyuk-soon CHOI, Jong-bong HA, Sun-kyu HWANG, In-jun HWANG