Abstract: Provided are a lithography apparatus, a method for lithography and a stage system. The lithography apparatus includes a reticle stage having a reticle, at least one nozzle on at least one surface of the reticle stage and configured to allow shielding gas to flow to a surface of the reticle to form an air curtain, and a gas supply unit configured to supply the nozzle with the shielding gas.

Abstract: An apparatus for protecting an extreme ultra violet (EUV) mask includes an EUV pellicle that allows EUV light to be radiated through the EUV pellicle onto the EUV mask, the EUV pellicle having a size corresponding to a size of a slit limiting the EUV light to a predetermined portion of the EUV mask, a flexible blocking film at opposite sides of the EUV pellicle in a first direction, the first direction being a scan direction of an exposure apparatus, and a roller unit including a first roller and a second roller, a first portion of the flexible blocking film being wound around the first roller at a first side of the EUV pellicle, and a second portion of the flexible blocking film being wound around the second roller at a second side of the EUV pellicle.

Abstract: An apparatus for protecting an extreme ultra violet (EUV) mask includes an EUV pellicle that allows EUV light to be radiated through the EUV pellicle onto the EUV mask, the EUV pellicle having a size corresponding to a size of a slit limiting the EUV light to a predetermined portion of the EUV mask, a flexible blocking film at opposite sides of the EUV pellicle in a first direction, the first direction being a scan direction of an exposure apparatus, and a roller unit including a first roller and a second roller, a first portion of the flexible blocking film being wound around the first roller at a first side of the EUV pellicle, and a second portion of the flexible blocking film being wound around the second roller at a second side of the EUV pellicle.

Abstract: An apparatus for creating an EUV light may include a droplet-supplying unit, a laser-irradiating unit, a light-concentrating unit and a guiding unit. The droplet-supplying unit may supply a droplet from which the EUV light may be created. The laser-irradiating unit may irradiate a laser to the droplet supplied from the droplet-supplying unit to create the EUV light. The light-concentrating unit may concentrate the EUV light created by the laser-irradiating unit. The guiding unit may guide the droplet to a position at which the laser may be irradiated. The guiding unit may have at least one gas-spraying hole for spraying a gas to a space between the droplet-supplying unit and the laser irradiation position to form a gas curtain configured to surround the droplet.

Abstract: Provided are a lithography apparatus, a method for lithography and a stage system. The lithography apparatus includes a reticle stage having a reticle, at least one nozzle on at least one surface of the reticle stage and configured to allow shielding gas to flow to a surface of the reticle to form an air curtain, and a gas supply unit configured to supply the nozzle with the shielding gas.

Abstract: An apparatus for creating an EUV light may include a droplet-supplying unit, a laser-irradiating unit, a light-concentrating unit and a guiding unit. The droplet-supplying unit may supply a droplet from which the EUV light may be created. The laser-irradiating unit may irradiate a laser to the droplet supplied from the droplet-supplying unit to create the EUV light. The light-concentrating unit may concentrate the EUV light created by the laser-irradiating unit. The guiding unit may guide the droplet to a position at which the laser may be irradiated. The guiding unit may have at least one gas-spraying hole for spraying a gas to a space between the droplet-supplying unit and the laser irradiation position to form a gas curtain configured to surround the droplet.

Abstract: A method of inspecting a structure. The method includes preparing preliminary spectrums of reference diffraction intensities according to critical dimensions of reference structures, obtaining a linear spectrum from the preliminary spectrums in a set critical dimension range, radiating light to respective measurement structures formed on a substrate, measuring measurement diffraction intensities of the light diffracted by the measurement structures, and obtaining respective critical dimensions of the measurement structures from the measurement diffraction intensities using the linear spectrum.

Abstract: Provided are a reflective reticle chuck, a reflective illumination system including the chuck, a method of controlling the flatness of a reflective reticle using the chuck, and a method of manufacturing a semiconductor device using the chuck. The reflective reticle chuck includes a fixed portion and a mobile portion that together provide a securing surface for the reflective reticle. The mobile portion may alter a height of the securing surface relative to the fixed portion.

Abstract: In a method of forming fine patterns, a photocurable coating layer is formed on a substrate. A first surface of a template makes contact with the photocurable coating layer. The first surface of the template includes at least two first patterns having a first dispersion degree of sizes, and at least one portion of the first surface of the template includes a photo attenuation member. A light is irradiated onto the photocurable coating layer through the template to form a cured coating layer including second patterns having a second dispersion degree of sizes. The second patterns are generated from the first patterns and the second dispersion degree is less than the first dispersion degree. The template is separate from the cured coating layer. A size dispersion degree of the patterns used in a nanoimprint lithography process may be adjusted by the light attenuation member, so that the fine patterns may be formed to have an improved size dispersion degree.

Abstract: Photolithography masks include an optically transparent substrate having a plurality of fiducial position aligning marks on sidewalls thereof. A reflective layer is also provided on an upper surface of the optically transparent substrate. The reflective layer includes a composite of a lower reflective layer of a first material and an upper reflective layer of a second material different from the first material, on the lower reflective layer. The lower reflective layer may include molybdenum and the upper reflective layer may include silicon. An anti-reflective layer is provided on the reflective layer.

Abstract: Provided are a reflective reticle chuck, a reflective illumination system including the chuck, a method of controlling the flatness of a reflective reticle using the chuck, and a method of manufacturing a semiconductor device using the chuck. The reflective reticle chuck includes a fixed portion and a mobile portion that together provide a securing surface for the reflective reticle. The mobile portion may alter a height of the securing surface relative to the fixed portion.

Abstract: A method of inspecting a structure. The method includes preparing preliminary spectrums of reference diffraction intensities according to critical dimensions of reference structures, obtaining a linear spectrum from the preliminary spectrums in a set critical dimension range, radiating light to respective measurement structures formed on a substrate, measuring measurement diffraction intensities of the light diffracted by the measurement structures, and obtaining respective critical dimensions of the measurement structures from the measurement diffraction intensities using the linear spectrum.

Abstract: Nanoimprint lithography templates and methods of fabricating semiconductor devices using the nanoimprint lithography templates are provided. The nanoimprint lithography template includes a transparent substrate having a first refractive index, a stamp pattern on a surface on the transparent substrate and having inclined sidewalls, and a coating layer formed on the inclined sidewalls of the stamp pattern, the coating layer having a second refractive index higher than the first refractive index.

Abstract: In a method of forming fine patterns, a photocurable coating layer is formed on a substrate. A first surface of a template makes contact with the photocurable coating layer. The first surface of the template includes at least two first patterns having a first dispersion degree of sizes, and at least one portion of the first surface of the template includes a photo attenuation member. A light is irradiated onto the photocurable coating layer through the template to form a cured coating layer including second patterns having a second dispersion degree of sizes. The second patterns are generated from the first patterns and the second dispersion degree is less than the first dispersion degree. The template is separate from the cured coating layer. A size dispersion degree of the patterns used in a nanoimprint lithography process may be adjusted by the light attenuation member, so that the fine patterns may be formed to have an improved size dispersion degree.

Abstract: Mask sets are provided which may be used to define a first pattern region that has a first pitch pattern and a second pattern region that has a second pitch pattern during the fabrication of a semiconductor device. These mask sets may include a first mask that has a first exposure region in which a first halftone pattern defines the first pattern region and a first screen region in which a first shield layer covers the second pattern region. These mask sets may further include a second mask that has a second exposure region in which a second halftone pattern defines the second pattern region and a second screen region in which a second shield layer covers the first pattern region. The second shield layer also extends from the second screen region to cover a portion of the second halftone pattern.

Abstract: Mask sets are provided which may be used to define a first pattern region that has a first pitch pattern and a second pattern region that has a second pitch pattern during the fabrication of a semiconductor device. These mask sets may include a first mask that has a first exposure region in which a first halftone pattern defines the first pattern region and a first screen region in which a first shield layer covers the second pattern region. These mask sets may further include a second mask that has a second exposure region in which a second halftone pattern defines the second pattern region and a second screen region in which a second shield layer covers the first pattern region. The second shield layer also extends from the second screen region to cover a portion of the second halftone pattern.