Abstract: A memory module according to some embodiments is operable in a computer system including a memory controller coupled to a memory channel. The memory module comprises a volatile memory subsystem, non-volatile (NV) memory subsystem and a module controller coupled to the volatile memory subsystem and the NV memory subsystem. The volatile memory subsystem includes dynamic random access memory (DRAM) devices and is configurable to communicate with the memory controller via the memory channel during memory read or write operations. The module controller is configured to output first strobe signals to accompany first data signals from the volatile memory subsystem during a memory read operation and to output second strobe signals together with second data signals carrying data from the non-volatile memory subsystem during a system-initiated NV read operation.

Abstract: A memory expansion device operable with a host computer system (host) comprises a non-volatile memory (NVM) subsystem, cache memory, and control logic configurable to receive a submission from the host including a read command and specifying a payload in the NVM subsystem and demand data in the payload. The control logic is configured to request ownership of a set of cache lines corresponding to the payload, to indicate completion of the submission after acquiring ownership of the cache lines, and to load the payload to the cache memory. The set of cache lines correspond to a set of cache lines in a coherent destination memory space accessible by the host. The control logic is further configured to, after indicating completion of the submission and in response to a request from the host to read demand data in the payload, return the demand data after determining that the demand data is in the cache memory.

Abstract: A memory module according to some embodiments is operable in a computer system, and comprises a volatile memory subsystem and a module controller coupled to the volatile memory subsystem. The volatile memory subsystem is configurable to be coupled to a memory channel including a data bus, and includes dynamic random access memory (DRAM) devices. The memory module allows independent control of strobe paths and data paths between the DRAM devices and the data bus, and is configurable to perform a memory write operation during which write data is provided to the volatile memory subsystem together with write strobes transmitted via first strobe paths between the DRAM devices and the data bus, and a memory read operation during which read data from the volatile memory subsystem is output onto the data bus together with read strobes transmitted via second strobe paths between the module controller and the data bus.

Abstract: A memory expansion device operable with a host computer system (host) comprises a non-volatile memory (NVM) subsystem, cache memory, and control logic configurable to receive a submission from the host including a read command and specifying a payload in the NVM subsystem and demand data in the payload. The control logic is configured to request ownership of a set of cache lines corresponding to the payload, to indicate completion of the submission after acquiring ownership of the cache lines, and to load the payload to the cache memory. The set of cache lines correspond to a set of cache lines in a coherent destination memory space accessible by the host. The control logic is further configured to, after indicating completion of the submission and in response to a request from the host to read demand data in the payload, return the demand data after determining that the demand data is in the cache memory.

Abstract: A memory expansion device operable with a host computer system (host) comprises a non-volatile memory (NVM) subsystem, cache memory, and control logic configurable to receive a submission from the host including a read command and specifying a payload in the NVM subsystem and demand data in the payload. The control logic is configured to request ownership of a set of cache lines corresponding to the payload, to indicate completion of the submission after acquiring ownership of the cache lines, and to load the payload to the cache memory. The set of cache lines correspond to a set of cache lines in a coherent destination memory space accessible by the host. The control logic is further configured to, after indicating completion of the submission and in response to a request from the host to read demand data in the payload, return the demand data after determining that the demand data is in the cache memory.

Abstract: A memory module according to some embodiments is operable in a computer system, and comprises a volatile memory subsystem and a module controller coupled to the volatile memory subsystem. The volatile memory subsystem is configurable to be coupled to a memory channel including a data bus, and includes dynamic random access memory (DRAM) devices. The memory module allows independent control of strobe paths and data paths between the DRAM devices and the data bus, and is configurable to perform a memory write operation during which write data is provided to the volatile memory subsystem together with write strobes transmitted via first strobe paths between the DRAM devices and the data bus, and a memory read operation during which read data from the volatile memory subsystem is output onto the data bus together with read strobes transmitted via second strobe paths between the module controller and the data bus.

Abstract: Embodiments are generally directed to accelerated address indirection table lookup for wear-leveled non-volatile memory. A embodiment of a memory device includes nonvolatile memory; a memory controller; and address indirection logic to provide address indirection for the nonvolatile memory, of the address indirection logic to maintain an address indirection table (AIT) in the nonvolatile memory, the AIT including a plurality of levels, and copy at least a portion of the AIT to a second memory, the second memory having less latency than the first memory.

Abstract: Embodiments are generally directed to accelerated address indirection table lookup for wear-leveled non-volatile memory. A embodiment of a memory device includes nonvolatile memory; a memory controller; and address indirection logic to provide address indirection for the nonvolatile memory, of the address indirection logic to maintain an address indirection table (AIT) in the nonvolatile memory, the AIT including a plurality of levels, and copy at least a portion of the AIT to a second memory, the second memory having less latency than the first memory.

Abstract: Systems and methods may provide for detecting a pending write operation directed to a target memory region and determining whether the target memory region satisfies a degradation condition in response to the pending write operation. Additionally, the target memory region may be automatically reconfigured as a cold storage region if the target memory region satisfies the degradation condition. In one example, determining whether the target memory region satisfies the degradation condition includes updating the number of write operations directed to the target memory region based on the pending write operation and comparing the number of write operations to an offset value, wherein the degradation condition is satisfied if the number of write operations exceeds the offset value.