Abstract: Gallium-containing semiconductor layers are grown on a substrate, followed by dry etching of the gallium-containing semiconductor layers during fabrication of a device. After the dry etching, surface treatments are performed to remove damage from the sidewalls of the device. After the surface treatments, dielectric materials are deposited on the sidewalls of the device to passivate the sidewalls of the device. These steps result in an improvement in forward current-voltage characteristics and reduction in leakage current of the device, as well as an enhancement of light output power and efficiency of the device.

Abstract: A micro light emitting diode including a mesa comprising an epitaxial structure and having a top surface with an area less than 10 micrometers by 10 micrometers, less than 1 micrometer by 1 micrometer, or less than 0.5 micrometers by 0.5 micrometers; a dielectric on the top surface; and a via hole in the dielectric that is centered or self aligned on the top surface, e.g., perfectly centered or centered within 0.5% of the center of the top surface. In one or more examples, the micro light emitting diode is plasma damage free. Metallization in the via hole is used to electrically contact the micro light emitting diode.