Abstract: Systems and methods for acquiring measurements of structures of a bonded sample are disclosed. Such systems and methods may include determining a first registration measurement of a first registration structure and a first interface target structure of a first sample, and a second registration measurement of a second sample prior to coupling the samples together. Such systems and methods may include, after such a coupling of the samples, determining a third registration measurement of the coupled sample at least partially by measuring the first registration structure through the top face of the first sample. Such systems and methods may include acquiring an overlay measurement based on the first registration measurement, the second registration measurement, and the third registration measurement. Such systems and methods may include adjusting an inter-sample coupling recipe based on the overlay measurement, where the inter-sample coupling recipe may include a final bonding recipe.

Abstract: Scatterometry overlay targets and measurement methods are provided, which are configured to detect and eliminate process-related errors and illumination-related errors from overlay measurements of the targets. Targets comprise at least three cells associated with a measurement direction, wherein at least two of the cells comprise periodic structures at different target layers, having a same pitch and opposite offsets between the two cells, and at least an additional cell comprises a periodic structure with the same pitch at only one of the target layers. The additional cell(s) are used to detect irregularities in the respective periodic structure(s), enable estimation of process quality, provide reference images, enhance metrology simulations and provide mitigation of errors in critical process steps. Measurement methods incorporate scatterometry measurements ion the additional cell(s) for these purposes.

Abstract: Scatterometry overlay targets and measurement methods are provided, which are configured to detect and eliminate process-related errors and illumination-related errors from overlay measurements of the targets. Targets comprise at least three cells associated with a measurement direction, wherein at least two of the cells comprise periodic structures at different target layers, having a same pitch and opposite offsets between the two cells, and at least an additional cell comprises a periodic structure with the same pitch at only one of the target layers. The additional cell(s) are used to detect irregularities in the respective periodic structure(s), enable estimation of process quality, provide reference images, enhance metrology simulations and provide mitigation of errors in critical process steps. Measurement methods incorporate scatterometry measurements ion the additional cell(s) for these purposes.