Abstract: Methods and devices to implement mid-wave and long-wave infrared point spectrometers are disclosed. The described methods and devices involve bi-faceted gratings, high-operating-temperature barrier infrared and thermal detectors. The disclosed concept can be used to design flight spectrometers that cover broad solar reflectance plus thermal emission spectral ranges with a compact and low-cost instrument suitable for small spacecraft reconnaissance of asteroids, the Moon, and planetary satellites as well as mass-constrained landed missions.

Abstract: Methods and devices to implement mid-wave and long-wave infrared point spectrometers are disclosed. The described methods and devices involve bi-faceted gratings, high-operating-temperature barrier infrared and thermal detectors. The disclosed concept can be used to design flight spectrometers that cover broad solar reflectance plus thermal emission spectral ranges with a compact and low-cost instrument suitable for small spacecraft reconnaissance of asteroids, the Moon, and planetary satellites as well as mass-constrained landed missions.

Abstract: A Raman spectrometer that employs a time-gated single photon avalanche diode array as a sensor is described. The spectrometer can also perform fluorescence spectroscopy and laser induced breakdown spectroscopy (LIBS). A laser is used to provide an excitation signal to excite a specimen of interest. A spectrometer is used to separate the various intensities over a range of wavelengths, which are then caused to impinge on the array to be recorded. The time-gated single photon avalanche diode array is triggered in synchrony with the excitation signal so as to allow time resolution of the response of the sample of interest to the excitation. The array can be time-gated to resolve signals that have shorter durations as a function of time while excluding signals that have a longer time duration. Raman and LIBS signals can be observed even from specimens that fluoresce strongly.

Abstract: A method is provided for growing a back surface contact on an imaging detector used in conjunction with back illumination. In operation, an imaging detector is provided. Additionally, a back surface contact (e.g. a delta-doped layer, etc.) is grown on the imaging detector utilizing a process that is performed at a temperature less than 450 degrees Celsius.

Abstract: A method is provided for growing a back surface contact on an imaging detector used in conjunction with back illumination. In operation, an imaging detector is provided. Additionally, a back surface contact (e.g. a delta-doped layer, etc.) is grown on the imaging detector utilizing a process that is performed at a temperature less than 450 degrees Celsius.