Patents by Inventor Jorg Hohage

Jorg Hohage has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6806191
    Abstract: A copper line that is formed in a patterned dielectric layer has a copper/silicon film formed on a surface thereof to substantially suppress an electromigration path through this surface. In an in situ process, the exposed copper surface is first cleaned by a reactive plasma ambient including nitrogen and ammonia and after a certain clean period, a gaseous compound comprising silicon, for example silane, is added to the reactive plasma ambient to form the copper/silicon film. Additionally, a capping layer may be deposited, wherein due to the copper/silicon film, any deposition technique or even spin-coating may be used.
    Type: Grant
    Filed: November 26, 2002
    Date of Patent: October 19, 2004
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Christian Zistl, Jörg Hohage, Hartmut Rülke, Peter Hübler
  • Publication number: 20030224599
    Abstract: A copper line that is formed in a patterned dielectric layer has a copper/silicon film formed on a surface thereof to substantially suppress an electromigration path through this surface. In an in situ process, the exposed copper surface is first cleaned by a reactive plasma ambient including nitrogen and ammonia and after a certain clean period, a gaseous compound comprising silicon, for example silane, is added to the reactive plasma ambient to form the copper/silicon film. Additionally, a capping layer may be deposited, wherein due to the copper/silicon film, any deposition technique or even spin-coating may be used.
    Type: Application
    Filed: November 26, 2002
    Publication date: December 4, 2003
    Inventors: Christian Zistl, Jorg Hohage, Hartmut Rulke, Peter Hubler