Abstract: An operating method for a roller-type test stand for a rail vehicle wheel set, in particular for simulating a sinusoidal run, has two parallel rail rollers, and the wheel set has two wheels which are connected to a wheel axle. The ends of the wheel axle are rotatably mounted in a first axle bearing and a second axle bearing. The wheels are in contact with the rail rollers in a respective base position of the axle bearings at a respective specified point of the rail rollers, and a first longitudinal actuator and a second longitudinal actuator each act on the first axle bearing or the second axle bearing in a longitudinal direction running transversely to the wheel axle.

Abstract: The invention relates to a method and a system for detecting, transmitting, and analyzing at least one safety-related signal (S1 . . . Sn), wherein the at least one safety-related signal (S1 . . . Sn) is detected using at least one detection unit (EE1 . . . EEn) and is transmitted to at least one analyzing unit (AE1 . . . AE4) via a radio system (FS). In order to simplify the detection of safety-related signals and improve the transmission thereof via a faulty radio path, at least two safety-related signals (S1, S2) are independently detected and transmitted to the analyzing unit (AE1 . . . AE4) via the radio system (FS) so as to allow a dangerous action to be carried out, and an output signal (FRS) for allowing a dangerous action to be carried out is generated by logically combining the received safety-related signals (S1 . . . Sn).

Abstract: The invention relates to a monolithic integrated semiconductor structure comprising a carrier layer on the basis of doped Si or doped GaP and a III/V semiconductor disposed thereupon and having the composition GaxInyNaAsbPcSbd, wherein x=70-100 mole-%, y=0-30 mole-%, a=0.5-15 mole-%, b=67.5-99.5 mole-%, c=0-32.0 mole-% and d=0-15 mole-%, wherein the total of x and y is always 100 mole-%, wherein the total of a, b, c and d is always 100 mole-%, and wherein the ratio of the totals of x and y on the one hand, and of a to d on the other hand, is substantially 1:1, to methods for the production thereof, new semiconductors, the use thereof for the production of luminescence diodes and laser diodes or also modulator and detector structures, which are monolithically integrated in integrated circuits on the basis of the Si or GaP technology.

Abstract: The invention relates to a monolithic integrated semiconductor structure comprising a carrier layer on the basis of doped Si or doped GaP and a III/V semiconductor disposed thereupon and having the composition GaxInyNaAsbPcSbd, wherein x=70-100 mole-%, y=0-30 mole-%, a=0.5-15 mole-%, b=67.5-99.5 mole-%, c=0-32.0 mole-% and d=0-15 mole-%, wherein the total of x and y is always 100 mole-%, wherein the total of a, b, c and d is always 100 mole-%, and wherein the ratio of the totals of x and y on the one hand, and of a to d on the other hand, is substantially 1:1, to methods for the production thereof, new semiconductors, the use thereof for the production of luminescence diodes and laser diodes or also modulator and detector structures, which are monolithically integrated in integrated circuits on the basis of the Si or GaP technology.

Abstract: The invention relates to a monolithic integrated semiconductor structure comprising a carrier layer on the basis of doped Si or doped GaP and a III/V semiconductor disposed thereupon and having the composition GaxInyNaAsbPcSbd, wherein x=70-100 mole-%, y=0-30 mole-%, a=0.5-15 mole-%, b=67.5-99.5 mole-%, c=0-32.0 mole-% and d=0-15 mole-%, wherein the total of x and y is always 100 mole-%, wherein the total of a, b, c and d is always 100 mole-%, and wherein the ratio of the totals of x and y on the one hand and of a to d on the other hand is substantially 1:1, to methods for the production thereof, new semiconductors, the use thereof for the production of luminescence diodes and laser diodes or also modulator and detector structures, which are monolithically integrated in integrated circuits on the basis of the Si or GaP technology.

Abstract: An electronic device that can be pushed onto a support rail (15), having a housing (1), with an electronic module that can be inserted detachably into the housing, and bus contacts are provided for the transmission of data and/or energy to neighboring electronic devices that are pushed onto the support rail (15) and have an identical design, with appropriately designed bus terminal. The bus contacts can be displaced relative to the housing (1). The bus contacts can be immobilized via a latching fixture so that when in a latched position they can be brought into contact of the bus terminals in the neighboring device.