Abstract: An accurate high current mirror circuit produces a mirrored current that matches an input current to produce an accuracy at the output of a subsequent stage of amplification of greater than 0.01%. A plurality of transistor devices are arranged in a symmetrical configuration and divided into two groups. The transistors in each of the two groups are connected in parallel to produce a high mirror current from a high input current. A distribution of a source voltage produces the same source voltage at each of the plurality of transistors. An input current metallization and a mirror current metallization are formed within the symmetrical configuration to have a same value of impedance. A plurality of P-channel transistors within the current mirror circuit control a voltage of a point on the input metallization to be the same as a reference voltage, thus causing the mirror current to be referenced around the reference voltage.

Abstract: An accurate high current mirror circuit produces a mirrored current that matches an input current to produce an accuracy at the output of a subsequent stage of amplification of greater than 0.01%. A plurality of transistor devices are arranged in a symmetrical configuration and divided into two groups. The transistors in each of the two groups are connected in parallel to produce a high mirror current from a high input current. A distribution of a source voltage produces the same source voltage at each of the plurality of transistors. An input current metallization and a mirror current metallization are formed within the symmetrical configuration to have a same value of impedance. A plurality of P-channel transistors within the current mirror circuit control a voltage of a point on the input metallization to be the same as a reference voltage thus causing the mirror current to be referenced around the reference voltage.