Abstract: A method for producing a layer system for thin-film solar cells is described, wherein a) an absorber layer is produced, and b) a buffer layer is produced on the absorber layer, wherein the buffer layer contains sodium indium sulfide according to the formula NaxIny-x/3S with 0.063?x?0.625 and 0.681?y?1.50, and wherein the buffer layer is produced, without deposition of indium sulfide, based on at least one sodium thioindate compound.

Abstract: A layer system (1) for thin-film solar cells (100), comprising an absorber layer (4), which contains a chalcogenide compound semiconductor, and a buffer layer (5), which is arranged on the absorber layer (4), wherein the buffer layer (5) has a semiconductor material of the formula AxInySz, where A is potassium (K) and/or cesium (Cs), with 0.015?x/(x+y+z)?0.25 and 0.30?y/(y+z)?0.45.

Abstract: The present invention relates to a layer system (1) for thin-film solar cells (100) and solar modules, comprising an absorber layer (4), which includes a chalcogenide compound semiconductor, and a buffer layer (5), which is arranged on the absorber layer (4) and includes halogen-enriched ZnxIn1-xSy with 0.01?x?0.9 and 1?y?2, wherein the buffer layer (5) consists of a first layer region (5.1) adjoining the absorber layer (4) with a halogen mole fraction A1 and a second layer region (5.2) adjoining the first layer region (5.1) with a halogen mole fraction A2 and the ratio A1/A2 is ?2 and the layer thickness (d1) of the first layer region (5.1) is ?50% of the layer thickness (d) of the buffer layer (5).

Abstract: A method for producing a compound semiconductor composed of pentanary kesterite/stannite of the type Cu2ZnSn(S,Se)4 is described. The method has the following steps: producing at least one precursor layer stack consisting of a first precursor layer and a second precursor layer; thermally treating the at least one precursor layer stack in a process chamber; and feeding at least one process gas into the process chamber during the thermal treatment of the at least one precursor layer stack. Furthermore, a thin-film solar cell with an absorber consisting of the pentanary compound semiconductor Cu2ZnSn(S,Se)4 on a body is described.

Abstract: The present invention relates to a layer system (1) for thin-film solar cells and solar modules based on CIS-absorbers (4). The layer system (1) according to the invention has a buffer layer (4) made of In2(S1?x,Sex)3+?, wherein 0?x?1 and ?1???1. Additionally, the buffer layer (5) is amorphously designed. With this buffer layer (5), the disadvantages of CdS-buffers frequently used to date, namely toxicity and poor process integration, are overcome, whereby in addition to high efficiency, high long-term stability is also achieved; and thus again the disadvantages of conventional buffer layers alternative to CdS do not exist.

Abstract: A method for producing a compound semiconductor composed of pentanary kesterite/stannite of the type Cu2ZnSn(S,Se)4 is described. The method has the following steps: producing at least one precursor layer stack consisting of a first precursor layer and a second precursor layer; thermally treating the at least one precursor layer stack in a process chamber; and feeding at least one process gas into the process chamber during the thermal treatment of the at least one precursor layer stack. Furthermore, a thin-film solar cell with an absorber consisting of the pentanary compound semiconductor Cu2ZnSn(S,Se)4 on a body is described.

Abstract: A method of manufacturing a photovoltaic device, which method comprises the steps of providing a first layer structure on an second layer structure so that the first layer structure has an external surface, and an interface with the second layer structure, the first layer structure comprising a thin-film photovoltaic absorber layer; patterning through the first layer structure from the external surface to or into the second layer structure by first mechanically removing material from the first layer structure in a predetermined patterning area, and subsequently removing, by means of laser cleaning, residual material from the mechanical removal in the patterning area; and a system for patterning an object having a first layer structure on an second layer structure, the system comprising a mechanical patterning device and a laser cleaning device, and means for relative movement between the object, and the mechanical patterning device and the laser cleaning device.

Abstract: The present invention relates to a layer system (1) for thin-film solar cells and solar modules based on CIS-absorbers (4). The layer system (1) according to the invention has a buffer layer (4) made of In2(S1?x,Sex)3+?, wherein 0?x?1 and ?1???1. Additionally, the buffer layer (5) is amorphously designed. With this buffer layer (5), the disadvantages of CdS-buffers frequently used to date, namely toxicity and poor process integration, are overcome, whereby in addition to high efficiency, high long-term stability is also achieved; and thus again the disadvantages of conventional buffer layers alternative to CdS do not exist.

Abstract: The invention relates to a device (1) and to a method for tempering objects (2, 15). According to the invention, a temporary process box (11) is used to overcome the disadvantages of tempering processes previously known, in particular to achieve a high level of reproducibility and a high throughput during the tempering process, at the same time reducing the investment costs such that overall, the entire tempering process is carried out in a highly economical manner.

Abstract: A method of manufacturing a photovoltaic device, which method comprises the steps of providing a first layer structure on an second layer structure so that the first layer structure has an external surface, and an interface with the second layer structure, the first layer structure comprising a thin-film photovoltaic absorber layer; patterning through the first layer structure from the external surface to or into the second layer structure by first mechanically removing material from the first layer structure in a predetermined patterning area, and subsequently removing, by means of laser cleaning, residual material from the mechanical removal in the patterning area; and a system for patterning an object having a first layer structure on an second layer structure, the system comprising a mechanical patterning device and a laser cleaning device, and means for relative movement between the object, and the mechanical patterning device and the laser cleaning device.