Abstract: The present invention relates to a device for heat treating an object, in particular a coated substrate, with an in particular gas-tightly sealable housing that encloses a hollow space, wherein the hollow space has a separating wall, by which the hollow space is divided into a process space for accommodating the object and an intermediate space, wherein the separating wall has one or a plurality of openings, which are implemented such that the separating wall acts as a barrier for the diffusion out of the process space into the intermediate space of a gaseous substance generated in the process space by the heat treatment of the object. The housing has at least one housing section coupled to a cooling device for its active cooling, wherein the separating wall is arranged between the object and the coolable housing section. The invention further relates to the use of a separating wall as a diffusion barrier in a device for heat treating an object as well as a corresponding method for heat treating an object.

Abstract: The present invention relates to a layer system (1) for thin-film solar cells (100) and solar modules, comprising an absorber layer (4), which includes a chalcogenide compound semiconductor, and a buffer layer (5), which is arranged on the absorber layer (4) and includes halogen-enriched ZnxIn1-xSy with 0.01?x?0.9 and 1?y?2, wherein the buffer layer (5) consists of a first layer region (5.1) adjoining the absorber layer (4) with a halogen mole fraction A1 and a second layer region (5.2) adjoining the first layer region (5.1) with a halogen mole fraction A2 and the ratio A1/A2 is ?2 and the layer thickness (d1) of the first layer region (5.1) is ?50% of the layer thickness (d) of the buffer layer (5).

Abstract: The present invention relates to a system for processing coated substrates, having the following features: at least one evacuable process box for accommodating at least one substrate with a gas-tightly sealable housing, which forms a hollow space, wherein the housing comprises at least one housing section, which is implemented such that the substrate is thermally treatable by incident electromagnetic thermal radiation, wherein the housing has at least one housing section coupleable to a cooling device for its cooling and at least one housing section not coupled to the cooling device, wherein the hollow space is divided by at least one separating wall into a process space for accommodating the substrate and an intermediate space, wherein the separating wall has one or a plurality of openings and is arranged between the substrate and the housing section coupled to the cooling device, and wherein the housing is provided with at least one sealable gas passage that opens into the hollow space, for evacuating and i

Abstract: The present invention relates to a layer system (1) for thin-film solar cells with an absorber layer (4) that contains a chalcogenide compound semiconductor and a buffer layer (5) that is arranged on the absorber layer (4), wherein the buffer layer (5) contains NaxIn1SyClz with 0.05?x<0.2 or 0.2<x?0.5, 1?y?2, and 0.6?x/z ?1.4.

Abstract: A method for producing a layer system for thin-film solar cells is described, wherein a) an absorber layer is produced, and b) a buffer layer is produced on the absorber layer, wherein the buffer layer contains sodium indium sulfide according to the formula NaxIny-x/3S with 0.063?x?0.625 and 0.681?y?1.50, and wherein the buffer layer is produced, without deposition of indium sulfide, based on at least one sodium thioindate compound.

Abstract: A layer system (1) for thin-film solar cells (100), comprising an absorber layer (4), which contains a chalcogenide compound semiconductor, and a buffer layer (5), which is arranged on the absorber layer (4), wherein the buffer layer (5) has a semiconductor material of the formula AxInySz, where A is potassium (K) and/or cesium (Cs), with 0.015?x/(x+y+z)?0.25 and 0.30?y/(y+z)?0.45.

Abstract: The present invention relates to a layer system (1) for thin-film solar cells (100) and solar modules, comprising an absorber layer (4), which includes a chalcogenide compound semiconductor, and a buffer layer (5), which is arranged on the absorber layer (4) and includes halogen-enriched ZnxIn1-xSy with 0.01?x?0.9 and 1?y?2, wherein the buffer layer (5) consists of a first layer region (5.1) adjoining the absorber layer (4) with a halogen mole fraction A1 and a second layer region (5.2) adjoining the first layer region (5.1) with a halogen mole fraction A2 and the ratio A1/A2 is ?2 and the layer thickness (d1) of the first layer region (5.1) is ?50% of the layer thickness (d) of the buffer layer (5).

Abstract: The invention concerns a layer system for thin-layer solar cells, said layer system comprising an absorber layer for absorbing light and a buffer layer on the absorber layer, said buffer layer containing NaxIny-x/3S, in which 0.063?x?0.625 and 0.681?y?1.50.

Abstract: A back contact substrate for a photovoltaic cell includes a carrier substrate and an electrode, the electrode including an alloy thin film based: on at least one among copper (Cu) and silver (Ag); and on zinc (Zn).

Abstract: A back contact substrate for a photovoltaic cell includes a carrier substrate and an electrode, the electrode including an alloy thin film based on at least two elements, at least one first element MA chosen among copper (Cu), silver (Ag) and gold (Au), and at least one second element MB chosen among zinc (Zn), titanium (Ti), tin (Sn), silicon (Si), germanium (Ge), zirconium (Zr), hafnium (Hf), carbon (C) and lead (Pb).

Abstract: A back contact substrate for a photovoltaic cell, including a carrier substrate and an electrode, the electrode including a conductive coating including a metallic thin film based on a metal or metal alloy; a barrier to selenization thin film for protecting the conductive coating and based on at least one among MoxOyNz, WxOyNz, TaxOyNz, NbxOyNz, RexOyNz.

Abstract: The present invention relates to a layer system (1) for thin-film solar cells (100) and solar modules, comprising an absorber layer (4) that includes a chalcogenide compound semiconductor and a buffer layer (5) that is arranged on the absorber layer (4) and includes halogen-enriched InxSy with ??x/y?1, wherein the buffer layer (5) consists of a first layer region (5.1) adjoining the absorber layer (4) with a halogen mole fraction A1 and a second layer region (5.2) adjoining the first layer region (5.1) with a halogen mole fraction A2 and the ratio A1/A2 is ?2 and the layer thickness (d1) of the first layer region (5.1) is ?50% of the layer thickness (d) of the buffer layer (5).

Abstract: The present invention relates to a layer system (1) for thin-film solar cells with an absorber layer (4) that contains a chalcogenide compound semiconductor and a buffer layer (5) that is arranged on the absorber layer (4), wherein the buffer layer (5) contains NaxIn1SyClz with 0.05?x?0.2 or 0.2<x?0.5, 1?y?2, and 0.6?x/z?1.4.

Abstract: The present invention relates to a device for heat treating an object, in particular a coated substrate, with an in particular gas-tightly sealable housing that encloses a hollow space, wherein the hollow space has a separating wall, by which the hollow space is divided into a process space for accommodating the object and an intermediate space, wherein the separating wall has one or a plurality of openings, which are implemented such that the separating wall acts as a barrier for the diffusion out of the process space into the intermediate space of a gaseous substance generated in the process space by the heat treatment of the object. The housing has at least one housing section coupled to a cooling device for its active cooling, wherein the separating wall is arranged between the object and the coolable housing section. The invention further relates to the use of a separating wall as a diffusion barrier in a device for heat treating an object as well as a corresponding method for heat treating an object.

Abstract: A method for producing a compound semiconductor composed of pentanary kesterite/stannite of the type Cu2ZnSn(S,Se)4 is described. The method has the following steps: producing at least one precursor layer stack consisting of a first precursor layer and a second precursor layer; thermally treating the at least one precursor layer stack in a process chamber; and feeding at least one process gas into the process chamber during the thermal treatment of the at least one precursor layer stack. Furthermore, a thin-film solar cell with an absorber consisting of the pentanary compound semiconductor Cu2ZnSn(S,Se)4 on a body is described.

Abstract: The present invention relates to a system for processing coated substrates, having the following features: at least one evacuable process box for accommodating at least one substrate with a gas-tightly sealable housing, which forms a hollow space, wherein the housing comprises at least one housing section, which is implemented such that the substrate is thermally treatable by incident electromagnetic thermal radiation, wherein the housing has at least one housing section coupleable to a cooling device for its cooling and at least one housing section not coupled to the cooling device, wherein the hollow space is divided by at least one separating wall into a process space for accommodating the substrate and an intermediate space, wherein the separating wall has one or a plurality of openings and is arranged between the substrate and the housing section coupled to the cooling device, and wherein the housing is provided with at least one sealable gas passage that opens into the hollow space, for evacuating and i

Abstract: The present invention relates to a multilayer body arrangement 1 for the prevention of glass substrate deformation, comprising at least: a glass substrate 30, a functional coating 10, which is applied on one side of the glass substrate 30, an auxiliary layer 20, which is connected over its entire area to the side of the glass substrate 30 facing away from the functional coating 10, at least one emitter array 4 with a radiated power Ptot in the wavelength range from 250 nm to 4000 nm incident on the glass substrate 30 for heat-treating the functional coating 10, wherein the auxiliary layer 20 has an absorbed radiated power P20 from 10% to 60% of the incident radiated power Ptot.

Abstract: The present invention relates to a process box for processing a coated substrate, with the following features: a gas-tightly sealable housing, which forms a hollow space; the housing comprises at least one housing section, which is implemented such that the substrate is heat treatable by electromagnetic thermal radiation incident on the housing section; the housing has at least one housing section coupleable to a cooling device for its cooling and at least one non-coolable housing section; the hollow space is divided by at least one separating wall into a process space for accommodating the substrate and an intermediate space, wherein the separating wall has one or a plurality of openings and is arranged between the substrate and the temperature-controlable housing section; the housing is provided with at least one sealable gas passage that opens into the hollow space, for evacuating and introducing process gas into the hollow space.

Abstract: The present invention relates to a layer system (1) for thin-film solar cells and solar modules based on CIS-absorbers (4). The layer system (1) according to the invention has a buffer layer (4) made of In2(S1?x,Sex)3+?, wherein 0?x?1 and ?1???1. Additionally, the buffer layer (5) is amorphously designed. With this buffer layer (5), the disadvantages of CdS-buffers frequently used to date, namely toxicity and poor process integration, are overcome, whereby in addition to high efficiency, high long-term stability is also achieved; and thus again the disadvantages of conventional buffer layers alternative to CdS do not exist.

Abstract: A method for producing a compound semiconductor composed of pentanary kesterite/stannite of the type Cu2ZnSn(S,Se)4 is described. The method has the following steps: producing at least one precursor layer stack consisting of a first precursor layer and a second precursor layer; thermally treating the at least one precursor layer stack in a process chamber; and feeding at least one process gas into the process chamber during the thermal treatment of the at least one precursor layer stack. Furthermore, a thin-film solar cell with an absorber consisting of the pentanary compound semiconductor Cu2ZnSn(S,Se)4 on a body is described.