Abstract: A method for producing a thermal infrared sensor array in a vacuum-filled wafer-level housing with particularly small dimensions, consisting of at least two wafers, a cover wafer and a central wafer comprising multiple infrared-sensitive sensor pixels on a respective thin slotted membrane over a heat-insulating cavity is disclosed. A method for producing a high-resolution monolithic silicon micromechanical thermopile array sensor using wafer level packaging technology, wherein the sensor achieves a particularly high spatial resolution capability and a very high filling degree with very small housing dimensions, in particular a very low overall thickness, and can be inexpensively produced using standard CMOS processes. This is achieved in that the cover wafer is first rigidly mechanically connected to the provided central wafer comprising the sensor pixels with the infrared-sensitive pixels by means of wafer bonding, and the central wafer is then thinned out from the wafer rear face to a specified thickness.

Abstract: An SMD-enabled infrared thermopile sensor has at least one miniaturized thermopile pixel on a monolithically integrated sensor chip accommodated in a hermetically sealed housing which consists of an at least partially non-metallic housing substrate and a housing cover. A gas or a gas mixture is contained in the housing. The sensor has a particularly low overall height, in particular in the z direction. This is achieved by virtue of an aperture opening being introduced in the housing cover opposite the thermopile pixel(s), which aperture opening is closed with a focusing lens which focuses the radiation from objects onto the thermopile pixel(s) on the housing substrate, and by virtue of a signal processing unit being integrated on the same sensor chip next to the thermopile pixels, wherein the total housing height and the housing cover are at most 3 mm or less than 2.5 mm.

Abstract: High-resolution thermopile infrared sensor array having a plurality of parallel signal processing channels for the signals of a sensor array and a digital port for serially emitting the signals. Each signal processing channel comprises at least one analog to digital converter and is assigned a memory for storing the results of the analog to digital converters. Power consumption of the infrared sensor array is reduced in the case of a sensor array with at least 16 rows and at least 16 columns, in that no more than 8 or 16 pixels are connected to a signal processing channel. The number of signal processing channels corresponds to at least 4 times the number of rows. Some of the signal processing channels are disposed in the intermediate space between the pixels and others are disposed in an outer edge region of the sensor chip surrounding the sensor array along with other electronics.

Abstract: A high-resolution thermopile infrared sensor array having monolithically integrated signal processing and a plurality of parallel signal processing channels for the signals from pixels of a sensor array, and a digital port for the serial output of the pixel signals are provided, wherein the sensor array is located on one or more sensor chips. The thermal piled infrared sensor array possesses low power loss, high integration density and high thermal and geometric resolution. Each signal processing channel (K1 . . . KN) has at least one analogue/digital converter (ADC), and is assigned a memory region in a memory (RAM) for storing the signals from the pixels (SE).

Abstract: A thermopile infrared individual sensor includes a housing filled with a gaseous medium. It has optics and one or more sensor chips with individual sensor cells with infrared sensor structures with reticulated membranes, infrared-sensitive regions of which are each spanned by at least one beam over a cavity in a carrier body. The thermopile infrared sensor uses monolithic Si-micromechanics technology for contactless temperature measurements. In the case of a sufficiently large receiver surface, this outputs a high signal with a high response speed. A plurality of individual adjacent sensor cells are combined with respectively one infrared-sensitive region with thermopile structures on the membrane on a common carrier body of an individual chip to a single thermopile sensor structure with a signal output in the housing, consisting of a cap sealed with a base plate with a common gaseous medium.

Abstract: High-resolution thermopile infrared sensor array having a plurality of parallel signal processing channels for the signals of a sensor array and a digital port for serially emitting the signals. Each signal processing channel comprises at least one analog to digital converter and is assigned a memory for storing the results of the analog to digital converters. Power consumption of the infrared sensor array is reduced in the case of a sensor array with at least 16 rows and at least 16 columns, in that no more than 8 or 16 pixels are connected to a signal processing channel. The number of signal processing channels corresponds to at least 4 times the number of rows. Some of the signal processing channels are disposed in the intermediate space between the pixels and others are disposed in an outer edge region of the sensor chip surrounding the sensor array along with other electronics.

Abstract: The invention relates to a thermopile infrared individual sensor in a housing that is filled with a gaseous medium having optics and one or more sensor chips with individual sensor cells with infrared sensor structures with reticulated membranes, the infrared-sensitive regions of which are spanned by, in each case, at least one beam over a cavity in a carrier body with good thermal conduction. The object of the invention consists of specifying a thermopile infrared sensor using monolithic Si-micromechanics technology for contactless temperature measurements, which, in the case of a sufficiently large receiver surface, outputs a high signal with a high response speed and which can operated in a gaseous medium with normal pressure or reduced pressure and which is producible in mass produced numbers without complicated technology for sealing the housing.

Abstract: A thermal infrared sensor array in a wafer-level package includes at least one infrared-sensitive pixel produced using silicon micro mechanics, comprising a heat-isolating cavity in a silicon substrate surrounded by a silicon edge, and a thin membrane connected to the silicone edge by of thin beams. The cavity extends through the silicon substrate to the membrane, and there are slots between the membrane, the beams and the silicon edge. A plurality of infrared-sensitive individual pixels are arranged in lines or arrays and are designed in a CMOS stack in a dielectric layer, forming the membrane, and are arranged between at least one cover wafer which is designed in the form of a cap and has a cavity and a base wafer. The cover wafer, the silicon substrate and the base wafer are connected to one another in a vacuum-tight manner and enclosing a gas vacuum.

Abstract: High-resolution thermopile infrared sensor array having a plurality of parallel signal processing channels for the signals of a sensor array and a digital port for serially emitting the signals. Each signal processing channel comprises at least one analog to digital converter and is assigned a memory for storing the results of the analog to digital converters. Power consumption of the infrared sensor array is reduced in the case of a sensor array with at least 16 rows and at least 16 columns, in that no more than 8 or 16 pixels are connected to a signal processing channel. The number of signal processing channels corresponds to at least 4 times the number of rows. Some of the signal processing channels are disposed in the intermediate space between the pixels and others are disposed in an outer edge region of the sensor chip surrounding the sensor array along with other electronics.

Abstract: A high-resolution thermopile infrared sensor array having monolithically integrated signal processing and a plurality of parallel signal processing channels for the signals from pixels of a sensor array, and a digital port for the serial output of the pixel signals are provided, wherein the sensor array is located on one or more sensor chips. The thermal piled infrared sensor array possesses low power loss, high integration density and high thermal and geometric resolution. Each signal processing channel (K1 . . . KN) has at least one analogue/digital converter (ADC), and is assigned a memory region in a memory (RAM) for storing the signals from the pixels (SE).

Abstract: High-resolution thermopile infrared sensor array having a plurality of parallel signal processing channels for the signals of a sensor array and a digital port for serially emitting the signals. Each signal processing channel comprises at least one analog to digital converter and is assigned a memory for storing the results of the analog to digital converters. Power consumption of the infrared sensor array is reduced in the case of a sensor array with at least 16 rows and at least 16 columns, in that no more than 8 or 16 pixels are connected to a signal processing channel. The number of signal processing channels corresponds to at least 4 times the number of rows. Some of the signal processing channels are disposed in the intermediate space between the pixels and others are disposed in an outer edge region of the sensor chip surrounding the sensor array along with other electronics.

Abstract: An SMD-enabled infrared thermopile sensor has at least one miniaturized thermopile pixel on a monolithically integrated sensor chip accommodated in a hermetically sealed housing which consists of an at least partially non-metallic housing substrate and a housing cover. A gas or a gas mixture is contained in the housing. The sensor has a particularly low overall height, in particular in the z direction. This is achieved by virtue of an aperture opening being introduced in the housing cover opposite the thermopile pixel(s), which aperture opening is closed with a focusing lens which focuses the radiation from objects onto the thermopile pixel(s) on the housing substrate, and by virtue of a signal processing unit being integrated on the same sensor chip next to the thermopile pixels, wherein the total housing height and the housing cover are at most 3 mm or less than 2.5 mm.

Abstract: Thermopile infrared sensor structure with a high filling level in a housing filled with a medium (15), consisting of a carrier substrate (11) which has electrical connections (28, 28?) to the outside and is closed with an optical assembly (13), wherein a sensor chip (14) is applied to the carrier substrate (11) in the housing, which chip has a plurality of thermoelectric sensor element structures (16), the so-called “hot contacts” (10) of which are located on individual diaphragms (3) which are stretched across a respective cavity (9) in a silicon carrying body (24) with good thermal conductivity, wherein the “cold contacts” (25) are located on or in the vicinity of the silicon carrying body (24). The problem addressed by the invention is that of specifying a thermopile infrared array sensor (sensor cell) which, with a small chip size, has a high thermal resolution and a particularly high filling level.

Abstract: A sensor module comprises a radiation-sensitive sensor element (12), a sensor signal processing circuit (13, 41a, 44a) receiving the output signal of the sensor element (12) and obtaining a radiation-dependent first electric signal therefrom, a temperature-sensitive reference means (14, 15, 41b, 43, 44b) providing a temperature-dependent second electric signal and a signal combining means (16) for combining the two electric signals. The sensor signal processing circuit (13, 41a, 44a), the reference means (14, 15, 41b, 44b) and the combining means (16) are formed on a single chip (20, 21), and the chip (20, 21) and the sensor element (12) are accommodated in a common housing (22, 62, 64).

Abstract: A method for the correction of the output signal of an infra red radiation multiple element sensor comprises the steps of determining and storing a parameter of a sensor element of the sensor and of generating a corrected signal of the sensor element in accordance with the stored parameter, where the storage of the parameter takes place in a memory supplied by the manufacturer and where prior to the correction being carried out, the parameter is transmitted to a correction device which is separate from the sensor. A sensor has several sensor elements (11a to 11i) which generate an output signal and a memory (14) provided on the sensor for the storage of at least one parameter of at least one sensor element.

Abstract: A sensor for measuring a temperature by means of a heat-sensitive area applied onto and/or underneath a membrane, the membrane being arranged above a recess. The recess is etched by a reactive ion etching method such that it is fully defined laterally by side walls arranged at an angle between 80° and 100° relative to the membrane, adjoining side walls being arranged at an angle of at least 40° relative to one another.

Abstract: A method for the correction of the output signal of an infra red radiation multiple element sensor comprises the steps of determining and storing a parameter of a sensor element of the sensor and of generating a corrected signal of the sensor element in accordance with the stored parameter, where the storage of the parameter takes place in a memory supplied by the manufacturer and where prior to the correction being carried out, the parameter is transmitted to a correction device which is separate from the sensor. A sensor has several sensor elements (11a to 11i) which generate an output signal and a memory (14) provided on the sensor for the storage of at least one parameter or at least one sensor element.

Abstract: Presented is a sensor system for the detection of thermal radiation, with a substrate (15) and several sensor elements (10) on the substrate (15), in which case at least one self-test device (53) is provided in order to generate heat which can be used for the heating of one or more sensor elements (10). The sensor elements (10) can be heated according to a typical time pattern during the self-testing process. Also presented is an advantageous process for the manufacture of the sensor system as well as an advantageous configuration of the total system, including signal processing.

Abstract: The present invention concerns a sensor module with a hollow mirror (3) at whose focal point a sensor element (4) has been arranged whose output signal is compared with a reference signal and is transformed into a temperature signal in an evaluation circuit (15). The sensor module has a thermopile (6) in whose immediate vicinity a temperature reference element (5) has been arranged; a first pre-amplifier (8, 9), that is capable of being calibrated, amplifies the output signal from the thermopile (6); a second pre-amplifier (10-13) amplifies the output signal from the temperature reference element (5); and a third pre-amplifier (14) is connected into the circuit in the form of a difference amplifier and forms the difference in signal between the outputs from the first pre-amplifier (8, 9) and the second pre-amplifier (10-13).