Abstract: Ni3Si2 FUSI gates can be formed inter alia by further reaction of NiSi/Ni2Si gate stacks. Ni3Si2 behaves similarly to NiSi in terms of work function values, and of modulation with dopants on SiO2, in contrast to Ni-rich silicides which have significantly higher work function values on HfSixOy and negligible work function shifts with dopants on SiO2. Formation of Ni3Si2 can applied for applications targeting NiSi FUSI gates, thereby expanding the process window without changing the electrical properties of the FUSI gate.

Abstract: The disclosure provides a semiconductor device and method of manufacture therefore. The method for manufacturing the semiconductor device, in one embodiment, includes forming a layer of gate electrode material over a layer of gate dielectric material, wherein the layer of gate dielectric material is positioned over a substrate (210). This method further includes patterning the layer of gate electrode material and the layer of gate dielectric material into an NMOS gate structure (230), wherein the NMOS gate structure (230) includes an NMOS gate dielectric (240) and an NMOS gate electrode (250). This method further includes forming n-type source/drain regions (710) within the substrate (210) proximate the NMOS gate structure (230), and siliciding the NMOS gate electrode (250) to form a silicided gate electrode (1110, 1210). This method additionally includes placing a p-type dopant within the layer of gate electrode material or the NMOS gate electrode (250) prior to or concurrently with siliciding.

Abstract: Ni3Si2 FUSI gates can be formed inter alia by further reaction of NiSi/Ni2Si gate stacks. Ni3Si2 behaves similarly to NiSi in terms of work function values, and of modulation with dopants on SiO2, in contrast to Ni-rich silicides which have significantly higher work function values on HfSixOy and negligible work function shifts with dopants on SiO2. Formation of Ni3Si2 can applied for applications targeting NiSi FUSI gates, thereby expanding the process window without changing the electrical properties of the FUSI gate.

Abstract: Ni3Si2 FUSI gates can be formed inter alia by further reaction of NiSi/Ni2Si gate stacks. Ni3Si2 behaves similarly to NiSi in terms of work function values, and of modulation with dopants on SiO2, in contrast to Ni-rich silicides which have significantly higher work function values on HfSixOy and negligible work function shifts with dopants on SiO2. Formation of Ni3Si2 can applied for applications targeting NiSi FUSI gates, thereby expanding the process window without changing the electrical properties of the FUSI gate.

Abstract: A dual workfunction semiconductor device which comprises a first and second control electrode comprising a metal-semiconductor compound, e.g. a silicide or a germanide, and a dual workfunction semiconductor device thus obtained are disclosed. In one aspect, the method comprises forming a blocking region for preventing diffusion of metal from the metal-semiconductor compound of the first control electrode to the metal-semiconductor compound of the second control electrode, the blocking region being formed at a location where an interface between the first and second control electrodes is to be formed or is formed. By preventing metal to diffuse from the one to the other control electrode the constitution of the metal-semiconductor compounds of the first and second control electrodes may remain substantially unchanged during e.g. thermal steps in further processing of the device.

Abstract: A semiconductor device is disclosed that comprises a fully silicided electrode formed of an alloy of a semiconductor material and a metal, a workfunction modulating element for modulating a workfunction of the alloy, and a dielectric in contact with the fully silicided electrode. At least a part of the dielectric which is in direct contact with the fully silicided electrode comprises a stopping material for substantially preventing the workfunction modulating element from implantation into and/or diffusing towards the dielectric. A method for forming such a semiconductor device is also disclosed.

Abstract: Low work function metals for use as gate electrode in nMOS devices are provided. The low work function metals include alloys of lanthanide(s), metal and semiconductor. In particular, an alloy of nickel-ytterbium (NiYb) is used to fully silicide (FUSI) a silicon gate. The resulting nickel-ytterbium-silicon gate electrode has a work function of about 4.22 eV.

Abstract: A method for manufacturing a MOSFET device with a fully silicided (FUSI) gate is described. This method may be used to prevent formation of shorts between the FUSI gate and a contact to a source and/or a drain region. In particular, the method discloses the formation of an expansion volume above a gate dielectric. The volume is designed to substantially contain the fully silicided gate.

Abstract: A dual workfunction semiconductor device which comprises a first and second control electrode comprising a metal-semiconductor compound, e.g. a silicide or a germanide, and a dual workfunction semiconductor device thus obtained are disclosed. In one aspect, the method comprises forming a blocking region for preventing diffusion of metal from the metal-semiconductor compound of the first control electrode to the metal-semiconductor compound of the second control electrode, the blocking region being formed at a location where an interface between the first and second control electrodes is to be formed or is formed. By preventing metal to diffuse from the one to the other control electrode the constitution of the metal-semiconductor compounds of the first and second control electrodes may remain substantially unchanged during e.g. thermal steps in further processing of the device.

Abstract: Ni3Si2 FUSI gates can be formed inter alia by further reaction of NiSi/Ni2Si gate stacks. Ni3Si2 behaves similarly to NiSi in terms of work function values, and of modulation with dopants on SiO2, in contrast to Ni-rich silicides which have significantly higher work function values on HfSixOy and negligible work function shifts with dopants on SiO2. Formation of Ni3Si2 can applied for applications targeting NiSi FUSI gates, thereby expanding the process window without changing the electrical properties of the FUSI gate.

Abstract: The invention provides a semiconductor device and method of manufacture therefore. The method for manufacturing the semiconductor device, in one embodiment, includes forming an NMOS gate structure over a substrate, wherein the NMOS gate structure includes an NMOS gate dielectric and an NMOS gate electrode. The method further includes forming n-type source/drain regions within the substrate proximate the NMOS gate structure, and forming a metal alloy layer over the NMOS gate electrode. The method additionally includes incorporating the metal alloy into the NMOS gate electrode to form an NMOS gate electrode fully silicided with the metal alloy.

Abstract: The disclosure provides a semiconductor device and method of manufacture therefore. The method for manufacturing the semiconductor device, in one embodiment, includes forming a layer of gate electrode material over a layer of gate dielectric material, wherein the layer of gate dielectric material is positioned over a substrate. This method further includes patterning the layer of gate electrode material and the layer of gate dielectric material into an NMOS gate structure, wherein the NMOS gate structure includes an NMOS gate dielectric and an NMOS gate electrode. This method further includes forming n-type source/drain regions within the substrate proximate the NMOS gate structure, and siliciding the NMOS gate electrode to form a silicided gate electrode. This method additionally includes placing a p-type dopant within the layer of gate electrode material or the NMOS gate electrode prior to or concurrently with siliciding.

Abstract: Provided is a method for manufacturing a semiconductor device that includes forming a gate structure over a substrate, wherein the gate structure includes a gate dielectric and a gate electrode. The method further includes forming a metal layer over the gate electrode, and forming a fully silicided gate electrode using the metal layer. The fully silicided gate electrode may be formed by subjecting the gate electrode to a first anneal in a presence of the metal layer to form a silicided gate electrode, wherein a maximum temperature of the first anneal does not exceed about 340° C. The fully silicided gate electrode may further be formed by removing any unreacted portions of the metal layer after the first anneal, and subjecting the silicided gate electrode to a second anneal to form the fully silicided gate electrode subsequent to the removing. A maximum temperature of the second anneal exceeds about 400° C.

Abstract: A semiconductor device is provided comprising a main electrode (4) and a dielectric (3) in contact with the main electrode (4), the main electrode (4) comprising a material having a work function and a work function modulating element (6) for modulating the work function of the material of the main electrode (4) towards a predetermined value. The main electrode (4) furthermore comprises a diffusion preventing dopant element (5) for preventing diffusion of the work function modulating element (6) towards and/or into the dielectric (3). Methods for forming such a semiconductor device are also described.

Abstract: A polysilicon layer of a gate structure is covered by an implant blocking layer (e.g., silicon nitride). The implant blocking layer blocks introduction of implanted dopants while implanting an initial dose of first conductivity type dopant (e.g., for drain extension regions). The implant blocking layer is then removed and an additional dose of first conductivity type dopant in implanted to form the main source/drain regions. Then, metal is deposited and reacted to form a conductive silicide.

Abstract: A method to enhance the formation of nucleation sites on at least one narrow silicon structure comprises the step: forming at least one nucleation region (206/208): masking the at least one narrow silicon structure (202) with a mask (302); treating the at least one nucleation region (206/208) to enhance an ability of said region to form C54 nucleation sites; and removing the mask from the at least one narrow silicon structure (202).

Abstract: A polysilicon layer of a gate structure is covered by a film that blocks introduction of implanted dopants into the polysilicon layer, while allowing implantation into the source and drain. The implant blocking film is removed before metal deposition for the salicide process.

Abstract: A method to enhance the formation of nucleation sites on at least one narrow silicon structure comprises the steps: forming at least one nucleation region (206/208); masking the at least one narrow silicon structure (202) with a mask (302); treating the at least one nucleation region (206/208) to enhance an ability of said region to form C54 nucleation sites; and removing the mask from the at least one narrow silicon structure (202).

Abstract: Method of forming a salicide on a gate structure uses sidewall spacers which leave at least 30 percent of the gate sidewall exposed. After metal deposition, which has at least 50 percent step coverage, an anisotropic etch removes some or all of the metal on horizontal surfaces. Silicides formed from this metal layer are conformal, or even thicker on the sides of the gate than on horizontal structures. This achieves low sheet resistance on the gate, while remaining compatible with shallow junctions.

Abstract: A method of forming silicided narrow (i.e., sub-0.25 .mu.m) polysilicon lines. A layer of titanium is deposited over a semiconductor body having polysilicon lines formed thereon Either before or after the titanium deposition and before the react step, an implant is performed using a gas that will not poison the subsequent silicidation reaction. Exemplary gases include the noble element gases such as argon, krypton, xenon, and neon. The titanium is then reacted with the polysilicon lines to form titanium silicide. The gas implant causes the C49 grain size of the titanium silicide to be reduced, which makes the transformation to the C54 phase easier. Finally, an anneal is performed to transform the titanium silicide from the C49 phase to the C54 phase.