Abstract: A DC link bus includes a first and second set of conductive layers, arranged between insulation layers that separate the first set from the second set. A set of positive and negative link conductors are coupled normal to a respective set of conductive layers, and coupled together to define a respective positive bus and a negative bus. Additionally, a method of forming a DC link bus includes respectively coupling a first and a second set of parallel conductive layers to each other. Coupling a set of positive link connectors, and a set of negative link connectors, perpendicular to the first set and second set of layers, respectively, and to each other to define a positive bus and a negative bus. Interdigitally arranging the first and second set of conductive layers, spacing adjacent layers of the second set of layers to reduce an inductance between the positive and negative bus.

Abstract: A DC link bus includes a first and second set of conductive layers, arranged between insulation layers that separate the first set from the second set. A set of positive and negative link conductors are coupled normal to a respective set of conductive layers, and coupled together to define a respective positive bus and a negative bus. Additionally, a method of forming a DC link bus includes respectively coupling a first and a second set of parallel conductive layers to each other. Coupling a set of positive link connectors, and a set of negative link connectors, perpendicular to the first set and second set of layers, respectively, and to each other to define a positive bus and a negative bus. Interdigitally arranging the first and second set of conductive layers, spacing adjacent layers of the second set of layers to reduce an inductance between the positive and negative bus.

Abstract: The present invention pertains to a process for depositing multi-component and nanostructured thin films. Various parameters are monitored during the process to produce the structure of the thin films, on one hand the residence time of the gas mixture in the reactor is controlled by the pumping rate, on the other side to generate the plasma direct current (DC) or radio frequency (RF) sources are used, plus the combination of three unbalanced magnetrons allows alternative emission of elements that make up the multi-component and nanostructured films. The process is monitored by an optical emission spectrometer (EOE) and a Langmuir probe (SL), the EOE can follow the emission corresponding to the electronic transitions of atoms and molecules in the plasma. Emissions occur in the visible, infrared and ultraviolet domains. The relationships between spectral networks of different elements have been identified that ensure structural characteristics of thin films.

Abstract: The present invention pertains to a process for depositing multi-component and nanostructured thin films. Various parameters are monitored during the process to produce the structure of the thin films, on one hand the residence time of the gas mixture in the reactor is controlled by the pumping rate, on the other side to generate the plasma direct current (DC) or radio frequency (RF) sources are used, plus the combination of three unbalanced magnetrons allows alternative emission of elements that make up the multi-component and nanostructured films. The process is monitored by an optical emission spectrometer (EOE) and a Langmuir probe (SL), the EOE can follow the emission corresponding to the electronic transitions of atoms and molecules in the plasma. Emissions occur in the visible, infrared and ultraviolet domains. The relationships between spectral networks of different elements have been identified that ensure structural characteristics of thin films.