Abstract: A temperature controller is provided and includes interfaces, a compensation controller, summers, and a second controller. An interface receives a bias power signal and a plasma signal. The bias power signal indicates a bias RF power level of a RF generator. The plasma signal indicates a plasma RF power level of another RF generator. Another interface receives a temperature signal indicating a temperature of a substrate support. The compensation controller generates a compensation value based on a bias feed-forward transfer function and the bias RF power level and another compensation value based on a plasma feed-forward transfer function and the plasma RF power level. A summer generates an error signal based on a set point and the temperature. The second controller generates a control signal based on the error signal. Another summer controls an actuator to adjust the temperature based on the compensation values and the control signal.

Abstract: A temperature controller for a substrate support in a substrate processing system includes memory that stores a first model correlating temperatures of a plurality of first thermal control elements (TCEs) arranged in the substrate support and first temperature responses of the substrate support. The first temperature responses correspond to locations on a surface of the substrate support. A temperature estimation module calculates resistances of the first TCEs, determines, based on the calculated resistances, the temperatures of the first TCEs, and estimates, using the stored first model and the determined temperatures of the first TCEs, an actual temperature response of the substrate support. The temperature controller is configured to control the first TCEs based on the actual temperature response of the substrate support.

Abstract: A temperature controller for a substrate support in a substrate processing system includes memory that stores a first model correlating temperatures of a plurality of first thermal control elements (TCEs) arranged in the substrate support and first temperature responses of the substrate support. The first temperature responses correspond to locations on a surface of the substrate support. A temperature estimation module calculates resistances of the first TCEs, determines, based on the calculated resistances, the temperatures of the first TCEs, and estimates, using the stored first model and the determined temperatures of the first TCEs, an actual temperature response of the substrate support. The temperature controller is configured to control the first TCEs based on the actual temperature response of the substrate support.

Abstract: A temperature controller is provided and includes interfaces, a compensation controller, summers, and a second controller. An interface receives a bias power signal and a plasma signal. The bias power signal indicates a bias RF power level of a RF generator. The plasma signal indicates a plasma RF power level of another RF generator. Another interface receives a temperature signal indicating a temperature of a substrate support. The compensation controller generates a compensation value based on a bias feed-forward transfer function and the bias RF power level and another compensation value based on a plasma feed-forward transfer function and the plasma RF power level. A summer generates an error signal based on a set point and the temperature. The second controller generates a control signal based on the error signal. Another summer controls an actuator to adjust the temperature based on the compensation values and the control signal.