Abstract: A system which classifies patients according to their level of awareness or consciousness using measures derived solely from electroencephalograph (EEG) signals. The system comprises multiple observes of characteristics of signals, including artifact detectors, especially magnitude artifact detectors, eye blink detectors, stationarity/RMS detectors, slew rate detectors, and burst suppression detectors, and determination of power in certain frequency bands. The system produces a single derived probabilistic measure of conscious awareness called the patient state index (PSI) and displays values of trends in that index and values of an artifact index, an EMG index, and a suppression ratio in order to give the operator current information on the quality of the signal input. The PSI is derived from a statistical analysis using empirically derived population norms and other parameters.

Abstract: A system which classifies patients according to their level of awareness or consciousness using measures derived solely from electroencephalograph (EEG) signals. The system comprises multiple observers of characteristics of signals, including artifact detectors, especially magnitude artifact detectors, eye blink detectors, stationarity/RMS detectors, slew rate detectors, and burst suppression detectors, and determination of power in certain frequency bands. The system produces a single derived probabilistic measure of conscious awareness called the patient state index (PSI) and displays values of trends in that index and values of an artifact index, an EMG index, and a suppression ratio in order to give the operator current information on the quality of the signal input. The PSI is derived from a statistical analysis using empirically derived population norms and other parameters.

Abstract: PtSi/Si Schottky diode infrared detectors are currently being used in large-area focal plane arrays for imaging in the 3-5 micron atmospheric transmission window. Their photoresponse cuts off at about 6 microns, beyond which they cannot detect infrared ratiation. Because of the nature of Schottky diodes, this cut-off wavelength cannot be adjusted during operation, but is relatively fixed, varying only in proportion of the fourth root of an externally applied bias. This disclosure describes a Schottky diode infrared detector with a voltage-tunable cut-off wavelength. The tunability is obtained by modification of the Schottky diode band diagram by insertion of a SiGe layer, with the appropriate parameters, between the silicide and the Si substrate, making the detector a silicide/SiGe/Si Schottky diode detector. The SiGe/Si interface has a valence band offset that can be used to engineer the shape, or depth profile, of the Schottky barrier.