Abstract: The invention relates to a capacitive sensing material and a method of manufacturing thereof, a capacitive sensing coating formulation, a capacitive chip, a capacitive sensor, a method for manufacturing a coated chip, a method for analysing the composition of a gaseous mixture, a use of particles comprising titanium oxide and platinum for sensing hydrogen, and a use of capacitive sensing material for detecting a gas leak. The capacitive sensing material comprises composite particles wherein porous titanium dioxide is at least in part coated with platinum particles.

Abstract: A printed temperature sensor (10) comprising a substrate (1) with an electrical circuit (2) comprising a pair of electrodes (2a, 2b) separated by an electrode gap (G). A sensor material (3) is disposed between the electrodes (2a, 2b) to fill the electrode gap (G), wherein the sensor material (3) comprises semi-conducting micro-particles (3p) comprising an NTC material with a negative temperature coefficient (NTC), wherein the micro-particles (3p) are mixed in a dielectric matrix (3m) functioning as a binder for printing the sensor material (3); wherein the micro-particles (3p) contact each other to form an interconnected network through the dielectric matrix (3m), wherein the interconnected network of micro-particles (3p) acts as a conductive pathway with negative temperature coefficient between the electrodes (2a, 2b).

Abstract: A printed temperature sensor (10) comprising a substrate (1) with an electrical circuit (2) comprising a pair of electrodes (2a, 2b) separated by an electrode gap (G). A sensor material (3) is disposed between the electrodes (2a, 2b) to fill the electrode gap (G), wherein the sensor material (3) comprises semi-conducting micro-particles (3p) comprising an NTC material with a negative temperature coefficient (NTC), wherein the micro-particles (3p) are mixed in a dielectric matrix (3m) functioning as a binder for printing the sensor material (3); wherein the micro-particles (3p) contact each other to form an interconnected network through the dielectric matrix (3m), wherein the interconnected network of micro-particles (3p) acts as a conductive pathway with negative temperature coefficient between the electrodes (2a, 2b).

Abstract: The electronic device comprises an organic semiconductor material in a monodomain structure on a substrate. Said semiconductor material is preferably part of a transistor, wherein the monodomain extends on the channel, i.e. from a source to a drain electrode. The material comprises a mesogenic unit with spacer groups and end groups. The end groups are preferably reactive, i.e. dienes, acrylates, oxetanes or the like. The mesogenic unit contains a central oligothiophenyl-group, rigid spacer groups, particularly acetylenes, and additional groups, for instance thiophenyl or phenyl.