Abstract: Aspects of the present disclosure are directed to fabrication methods for analogue quantum systems (AQSs). Further aspects of the present disclosure are directed to methods for solving computational problems using an AQS. Methods for fabricating an AQS include generating a Hamiltonian based on a computational problem, which may be an optimization problem or a simulation problem. Further, the method includes identifying AQS fabrication parameters based on one or more identified measurement methods and the Hamiltonian. Lastly, an AQS can be fabricated based on the identified fabrication parameters. An AQS may be used inter alia to simulate a battery or interfaces.

Abstract: The present disclosure is directed to a methodology for embedding a deterministic number of dopant atoms in a surface portion of a group IV semiconductor lattice. The methodology comprises the steps of: forming one or more lithographic sites on the surface portion; dosing, at a temperature below 100 K, the surface portion using a gas with molecules comprising the dopant atom and hydrogen atoms in a manner such that, a portion of the molecules bonds to the surface portion; and incorporating one or more dopant atoms in a respective lithographic site by transferring an amount of energy to the dopant atoms. The number of dopant atoms incorporated in a lithographic site is deterministic and related to the size of the lithographic site.

Abstract: The present disclosure is directed to a methodology for embedding a deterministic number of dopant atoms in a surface portion of a group IV semiconductor lattice. The methodology comprises the steps of: forming one or more lithographic sites on the surface portion; dosing, at a temperature below 100 K, the surface portion using a gas with molecules comprising the dopant atom and hydrogen atoms in a manner such that, a portion of the molecules bonds to the surface portion; and incorporating one or more dopant atoms in a respective lithographic site by transferring an amount of energy to the dopant atoms. The number of dopant atoms incorporated in a lithographic site is deterministic and related to the size of the lithographic site.