Patents by Inventor José Roberto Sánchez Pérez

José Roberto Sánchez Pérez has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Strain tunable light emitting diodes with germanium P-I-N heterojunctions
    Patent number: 9472535
    Abstract: Tunable p-i-n diodes comprising Ge heterojunction structures are provided. Also provided are methods for making and using the tunable p-i-n diodes. Tunability is provided by adjusting the tensile strain in the p-i-n heterojunction structure, which enables the diodes to emit radiation over a range of wavelengths.
    Type: Grant
    Filed: November 8, 2013
    Date of Patent: October 18, 2016
    Assignee: Wisconsin Alumni Research Foundation
    Inventors: Max G. Lagally, José Roberto Sänchez Pérez
  • STRAIN TUNABLE LIGHT EMITTING DIODES WITH GERMANIUM P-I-N HETEROJUNCTIONS
    Publication number: 20150129911
    Abstract: Tunable p-i-n diodes comprising Ge heterojunction structures are provided. Also provided are methods for making and using the tunable p-i-n diodes. Tunability is provided by adjusting the tensile strain in the p-i-n heterojunction structure, which enables the diodes to emit radiation over a range of wavelengths.
    Type: Application
    Filed: November 8, 2013
    Publication date: May 14, 2015
    Applicant: Wisconsin Alumni Research Foundation
    Inventors: Max G. Lagally, José Roberto Sánchez Pérez