Abstract: A method to recover NGL's at gas Pressure Reducing Stations. A first step involve providing at least one heat exchanger having a flow path for passage of high pressure natural gas with a counter current depressurized lean cold gas. A second step involves passing the high pressure natural gas stream in a counter current flow with the lean cold gas and cooling it before de-pressurization. A third step involves the expansion of the high pressure cooled gas in a gas expander. The expansion of the gas generates shaft work which is converted into electrical power by the power generator and the expanded low pressure and cold gas enters a separator where NGL's are recovered. This process results in the recovery NGL's, electricity and the displacement of a slipstream of natural that is presently used to pre-heat gas at Pressure Reduction Stations.

Abstract: A method for selective extraction of natural gas liquids from “rich” natural gas. The method involves interacting a rich natural gas stream with Liquid Natural Gas (LNG) by mixing Liquid Natural Gas into the rich natural gas stream to lower the temperature of the rich natural gas stream to a selected hydrocarbon dew point, whereby a selected hydrocarbon liquid carried in the rich natural gas stream is condensed.

Abstract: A method to increase the storage capacity of a natural gas storage cavern includes effecting a heat exchange in a heat exchanger between a stream of coolant from a refrigeration or cooling plant and a natural gas stream to cool the natural gas stream prior to injecting the natural gas stream into the natural gas storage cavern.

Abstract: A method of conditioning natural gas in preparation for storage, involves taking an existing stream of continuously flowing natural gas flowing through a gas line (12) on its way to end users and diverting a portion of the stream of continuously flowing natural gas to a storage facility through a storage diversion line (22). The pressure of the natural gas is lowered, as is the temperature by the Joule-Thompson effect. The natural gas is passed in a single pass through a series of heat exchangers (18, 28,30, 32) prior to resuming flow through the gas line (12) at the lowered pressure. The diverted natural gas is liquefied in preparation for storage by effecting a heat exchange with the natural gas.

Abstract: A method to condense and recover CO2 from CO2 containing streams. A first step involve providing at more than one heat exchanger, with each heat exchanger having a first flow path for passage of a first fluid and a second flow path for passage of a second fluid. A second step involves passing a stream of very cold natural gas sequentially along the second flow path of each heat exchanger until it is heated for distribution and concurrently passing a CO2 containing stream sequentially along the first flow path of each heat exchanger, allowing the water vapor portion of the CO2 containing stream to condense and precipitate on the condensing heat exchangers. A third step involves passing a water vapor free CO2 containing stream to a cryogenic heat exchanger to condense, precipitate and recover CO2.

Abstract: A method is described of generating power from a pressure control station of a natural gas distribution system. A first step involves channeling natural gas entering the pressure control station into a turbine (52) which is powered by expansion of the natural gas as the pressure of the natural gas is reduced. A second step involves capturing the output of the turbine (52) for useful purposes.

Abstract: A method of hydrogenation of heavy oil. A first step involves providing a continuous pipe reactor defining a serpentine flow path. A second step involves heating heavy oil to lower the viscosity of the heavy oil. A third step involves pumping a turbulent flow of heavy oil and hydrogen through the continuous pipe reactor to promote addition of hydrogen into the heavy oil. The method has improved mass transfer due to the continuous turbulent flow through the continuous pipe reactor.

Abstract: A process is provided for treating crude oil to visbreak and/or upgrade such oil using hydrogen gas. The process includes the steps of introducing hydrogen into a heated stream of crude oil or partially upgraded crude oil and mixing such introduced hydrogen with the oil to achieve intimate dispersion of hydrogen to enhance thereby visbreaking and/or upgrading.

Abstract: A compliant layer metallization for relieving thermal and mechanical stress developed between a semiconductor and a semiconductor submount. The compliant layer metallization includes a compliant layer, a wetting layer and a barrier layer. The compliant layer provides thermal and mechanical stress relief. The wetting layer ensures adequate wetting during soldering. The barrier layer prevents diffusion of bonding material into the compliant layer and/or into the semiconductor during solder-bonding. The compliant layer metallization design promotes ease of manufacturing.

Abstract: An LED has both its p and n bonding pads on the p side of the wafer for simultaneous solder bump alignment and electrical connection of the LED with a device carrier. A groove is formed dividing the p material of the device into an active region and an inactive region. The groove also provides a path for the device's n-contact, which extends from the n-material at the base of the groove, up the side of the groove, to the n bonding pad on the surface of the inactive p material.

Abstract: In the liquid phase epitaxy growth of Group III-V compound semiconductors using boat-slider apparatus, melt-carry-over is essentially eliminated by prebaking the metallic solvent (e.g., In shot) in the boat to form ingots and then etching the ingots in dilute nitric or hydrochloric acid prior to adding solutes (e.g., GaAs, InP, dopants). This process removes contaminants which coalesce on the ingots and cause poor wipe-off.

Abstract: In the liquid phase epitaxy growth of Group III-V compound semiconductors using boat-slider apparatus, melt-carry-over is essentially eliminated by prebaking the metallic solvent (e.g., In shot) in the boat to form ingots and then etching the ingots in dilute nitric or hydrochloric acid prior to adding solutes (e.g., GaAs, InP, dopants). This process removes contaminants which coalesce on the ingots and cause poor wipe-off.

Abstract: Liquid phase epitaxy (LPE) growth of a Group III-V semiconductor compound layer upon a Group III-V semiconductor compound substrate containing phosphorus is accomplished in a graphite meltholder by heating the substrate in an atmosphere of nitrogen or helium and contacting the substrate with a liquid melt, capable of growing the layer, in an atmosphere of hydrogen.