Abstract: Described is a processor comprising: a plurality of radiation detectors; a first logic unit to receive outputs from the plurality of radiation detectors, the logic unit to generate an output according to the received outputs, the output of the first logic unit indicating whether the processor was exposed to incoming radiations; and a second logic unit to receive the output from the first logic unit, and to cause the processor to perform an action according to the output from the first logic unit.

Abstract: Described is a processor comprising: a plurality of radiation detectors; a first logic unit to receive outputs from the plurality of radiation detectors, the logic unit to generate an output according to the received outputs, the output of the first logic unit indicating whether the processor was exposed to incoming radiations; and a second logic unit to receive the output from the first logic unit, and to cause the processor to perform an action according to the output from the first logic unit.

Abstract: Biocompatible coatings for implantable medical devices are disclosed. Embodiments of the invention provide methods for coating an object with a biocompatible coating wherein the device is suspended using a flowing gas during the coating process. Embodiments of the invention provide tropoelastin coatings and methods of creating tropoelastin coatings for implantable medical devices. Optionally, the biocompatible coating can be a drug eluting coating.

Abstract: Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a metallic fuse structure by forming at least one via on a first interconnect structure, lining the at least one via with a barrier layer, and then forming a second interconnect structure on the at least one via.

Abstract: Described is a method and apparatus for forming interconnects with a metal-metal oxide electromigration barrier and etch-stop. In one embodiment of the invention, the method includes depositing a metal layer on the top of a planarized interconnect layer, the interconnect layer having an interlayer dielectric (ILD) with a top that is planar with the top of an electrically conductive interconnect. In one embodiment of the invention, the method includes reacting the metal layer with the ILD to form a metal oxide layer on the top of the ILD. At the same time, the metal layer will not be significantly oxidized by the electrically conductive interconnect, thus forming a metal barrier on the electrically conductive interconnect to improve electromigration performance. The metal barrier and metal oxide layer together comprise a protective layer. A second ILD may be subsequently formed on the protective layer, and the protective layer may act an etch-stop during a subsequent etch of the second ILD.

Abstract: A method and apparatus for repairing cache memories/arrays is described herein. A cache includes a plurality of lines and logically viewable in columns. A repair cache coupled to the cache includes a repair bit mapped to each logically viewable column. A repair module determines a bad bit to be repaired within a column based on any individual or combination of factors, such as the number of errors per line of the cache, the number of errors correctable per line of the cache due to error correction code (ECC), the failure rate of bits, or other considerations. The bad bit is transparently repaired by the repair bit mapped to the column including the bad bit, upon an access to a cache line including the bad bit.

Abstract: A microelectronic die including a CMOS ring oscillator thereon, and a method of using the same. The microelectronic die includes: a die substrate; and a plurality of CMOS ring oscillators on the die substrate, the ring oscillators being disposed at regions of the die substrate that are adapted to exhibit differing strain responses to package-included stress with respect to one another. A method of determining mechanical stress on a die which includes providing a die substrate in a CMOS ring oscillator on a die substrate. A frequency counter is coupled to the ring oscillator to measure a frequency of the ring oscillator to generate a frequency data signal therefrom. The frequency data signal is used to determine the mechanical stress on the die at a location of the ring oscillator.

Abstract: Described is a method and apparatus for forming interconnects with a metal-metal oxide electromigration barrier and etch-stop. In one embodiment of the invention, the method includes depositing a metal layer on the top of a planarized interconnect layer, the interconnect layer having an interlayer dielectric (ILD) with a top that is planar with the top of an electrically conductive interconnect. In one embodiment of the invention, the method includes reacting the metal layer with the ILD to form a metal oxide layer on the top of the ILD. At the same time, the metal layer will not be significantly oxidized by the electrically conductive interconnect, thus forming a metal barrier on the electrically conductive interconnect to improve electromigration performance. The metal barrier and metal oxide layer together comprise a protective layer. A second ILD may be subsequently formed on the protective layer, and the protective layer may act an etch-stop during a subsequent etch of the second ILD.

Abstract: A SOI device features a conductive pathway between active SOI devices and a bulk SOI substrate. The conductive pathway provides the ability to sink plasma-induced process charges into a bulk substrate in the event of process charging, such as interlayer dielectric deposition in a plasma environment, plasma etch deposition, or other fabrication provides. A method is also disclosed which includes dissipating electrostatic and process charges from a top of a SOI device to the bottom of the device. The top and bottom of the SOI device may characterize a region of active devices and a semiconductor method respectively. The method further includes a single masking step to create seed regions for an epitaxial-silicon pathway.

Abstract: Described is a method and apparatus for forming interconnects with a metal-metal oxide electromigration barrier and etch-stop. In one embodiment of the invention, the method includes depositing a metal layer on the top of a planarized interconnect layer, the interconnect layer having an interlayer dielectric (ILD) with a top that is planar with the top of an electrically conductive interconnect. In one embodiment of the invention, the method includes reacting the metal layer with the ILD to form a metal oxide layer on the top of the ILD. At the same time, the metal layer will not be significantly oxidized by the electrically conductive interconnect, thus forming a metal barrier on the electrically conductive interconnect to improve electromigration performance. The metal barrier and metal oxide layer together comprise a protective layer. A second ILD may be subsequently formed on the protective layer, and the protective layer may act an etch-stop during a subsequent etch of the second ILD.

Abstract: A method and apparatus for repairing cache memories/arrays is described herein. A cache includes a plurality of lines and logically viewable in columns. A repair cache coupled to the cache includes a repair bit mapped to each logically viewable column. A repair module determines a bad bit to be repaired within a column based on any individual or combination of factors, such as the number of errors per line of the cache, the number of errors correctable per line of the cache due to error correction code (ECC), the failure rate of bits, or other considerations. The bad bit is transparently repaired by the repair bit mapped to the column including the bad bit, upon an access to a cache line including the bad bit.

Abstract: A semiconductor substrate having metal oxide semiconductor (MOS) devices, such as an integrated circuit die, is mechanically coupled to a stress structure to apply a stress that improves the performance of at least a portion of the MOS devices on the die.

Abstract: Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a metallic fuse structure by forming at least one via on a first interconnect structure, lining the at least one via with a barrier layer, and then forming a second interconnect structure on the at least one via.

Abstract: A method and apparatus for repairing cache memories/arrays is described herein. A cache includes a plurality of lines and logically viewable in columns. A repair cache coupled to the cache includes a repair bit mapped to each logically viewable column. A repair module determines a bad bit to be repaired within a column based on any individual or combination of factors, such as the number of errors per line of the cache, the number of errors correctable per line of the cache due to error correction code (ECC), the failure rate of bits, or other considerations. The bad bit is transparently repaired by the repair bit mapped to the column including the bad bit, upon an access to a cache line including the bad bit.

Abstract: Biocompatible coatings for implantable medical devices are disclosed. Embodiments of the invention provide methods for coating an object with a biocompatible coating wherein the device is suspended using a flowing gas during the coating process. Embodiments of the invention provide tropoelastin coatings and methods of creating tropoelastin coatings for implantable medical devices. Optionally, the biocompatible coating can be a drug eluting coating.

Abstract: Biocompatible coatings for implantable medical devices are disclosed. Embodiments of the invention provide plasma etch processes, surface silanization processes, and protein coating processes. Embodiments of the invention provide tropoelastin coatings and methods of creating tropoelastin coatings for implantable medical devices. Optionally, the biocompatible coating can be a drug eluting coating.

Abstract: A method of forming a transistor gate stack having an annealed gate dielectric layer begins by providing a substrate that includes a first and second spacer separated by a trench. A conformal high-k gate dielectric layer is deposited on the substrate and within the trench with a thickness that ranges from 3 ? to 60 ?. Next, a capping layer is deposited on the high-k gate dielectric layer that substantially fills the trench and covers the high-k gate dielectric layer. The high-k gate dielectric layer is then annealed at a temperature that is greater than or equal to 600° C. The capping layer is removed to expose an annealed high-k gate dielectric layer. A metal layer is then deposited on the annealed high-k gate dielectric layer. A CMP process may be used to remove excess material and complete formation of the transistor gate stack.

Abstract: A microelectronic die including a CMOS ring oscillator thereon, and a method of using the same. The microelectronic die includes: a die substrate; and a plurality of CMOS ring oscillators on the die substrate, the ring oscillators being disposed at regions of the die substrate that are adapted to exhibit differing strain responses to package-induced stress with respect to one another.

Abstract: A method for fabricating a high quality silicon oxynitride layer for a high-k/metal gate transistor comprises depositing a high-k dielectric layer on a substrate, depositing a barrier layer on the high-k dielectric layer, wherein the barrier layer includes at least one of nitrogen or oxygen, depositing a capping layer on the barrier layer, and annealing the substrate at a temperature that causes at least a portion of the nitrogen and/or oxygen in the barrier layer to diffuse to an interface between the high-k dielectric layer and the substrate. The diffused nitrogen or oxygen forms a high-quality silicon oxynitride layer at the interface. The high-k dielectric layer, the barrier layer, and the capping layer may then be etched to form a gate stack for use in a high-k/metal gate transistor. The capping layer may be replaced with a metal gate electrode using a replacement metal gate process.

Abstract: Embodiments of the invention enable detection of edge damages in semiconductor devices. To this purpose, one or more continuity structures may be provided, where each structure comprises an undulating arrangement disposed between active circuits of the semiconductor device and a perimeter of the metallization layers. The continuity structure(s) forms one or more conductive paths intersecting a plurality of metallization layers in the semiconductor device. A relative change in an electrical characteristic of the continuity structure(s) is monitored to ascertain whether or not an edge damage is present.