Abstract: Systems and methods are provided for determining a clean endpoint time for a current run of a chamber. The clean endpoint time for the current run may be determined by determining that a chamber parameter, such as a chamber pressure, has stabilized. Historical clean endpoint time data is updated by adding the clean endpoint time for the current run of the chamber. A recommended clean endpoint time is then determined for the chamber based on the updated historical clean endpoint time data.

Abstract: Systems and methods are provided for determining a clean endpoint time for a current run of a chamber. The clean endpoint time for the current run may be determined by determining that a chamber parameter, such as a chamber pressure, has stabilized. Historical clean endpoint time data is updated by adding the clean endpoint time for the current run of the chamber. A recommended clean endpoint time is then determined for the chamber based on the updated historical clean endpoint time data.

Abstract: The present invention generally comprises a physical vapor deposition (PVD) system having separate susceptor, cathode, and lid sections in which each section is on a rail that elevates the sections off the ground. The cathode section may comprise a plurality of rotatable cathodes that lie in a plane such that the axis of rotation for the rotary cathodes is perpendicular to the ground. The lid section and the cathode section may be moved on the rails to open the cathode section for servicing. Of the plurality of rotatable cathodes, the cathodes corresponding to the center of the substrate upon which material will be deposited are spaced a greater distance from the substrate than rotatable cathodes corresponding to the edge of the substrate.