Patents by Inventor Jose Angelo OLAVE

Jose Angelo OLAVE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming film stacks with reduced defects
    Patent number: 11145504
    Abstract: A method of forming a film stack with reduced defects is provided and includes positioning a substrate on a substrate support within a processing chamber and sequentially depositing polysilicon layers and silicon oxide layers to produce the film stack on the substrate. The method also includes supplying a current of greater than 5 ampere (A) to a plasma profile modulator while generating a deposition plasma within the processing chamber, exposing the substrate to the deposition plasma while depositing the polysilicon layers and the silicon oxide layers, and maintaining the processing chamber at a pressure of greater than 2 Torr to about 100 Torr while depositing the polysilicon layers and the silicon oxide layers.
    Type: Grant
    Filed: October 9, 2019
    Date of Patent: October 12, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Zhijun Jiang, Ganesh Balasubramanian, Arkajit Roy Barman, Hidehiro Kojiri, Xinhai Han, Deenesh Padhi, Chuan Ying Wang, Yue Chen, Daemian Raj Benjamin Raj, Nikhil Sudhindrarao Jorapur, Vu Ngoc Tran Nguyen, Miguel S. Fung, Jose Angelo Olave, Thian Choi Lim
  • METHOD OF FORMING FILM STACKS WITH REDUCED DEFECTS
    Publication number: 20200227258
    Abstract: A method of forming a film stack with reduced defects is provided and includes positioning a substrate on a substrate support within a processing chamber and sequentially depositing polysilicon layers and silicon oxide layers to produce the film stack on the substrate. The method also includes supplying a current of greater than 5 ampere (A) to a plasma profile modulator while generating a deposition plasma within the processing chamber, exposing the substrate to the deposition plasma while depositing the polysilicon layers and the silicon oxide layers, and maintaining the processing chamber at a pressure of greater than 2 Torr to about 100 Torr while depositing the polysilicon layers and the silicon oxide layers.
    Type: Application
    Filed: October 9, 2019
    Publication date: July 16, 2020
    Inventors: Zhijun JIANG, Ganesh BALASUBRAMANIAN, Arkajit ROY BARMAN, Hidehiro KOJIRI, Xinhai HAN, Deenesh PADHI, Chuan Ying WANG, Yue CHEN, Daemian Raj BENJAMIN RAJ, Nikhil Sudhindrarao JORAPUR, Vu Ngoc Tran NGUYEN, Miguel S. FUNG, Jose Angelo OLAVE, Thian Choi LIM