Abstract: ALD versus PVD IGZO Channel and AlOx channel passivation in a vertical wordline driver. A pillar is formed in a stacked layer semiconductor structure including a source layer, wherein forming the pillar exposes layers in the semiconductor structure and exposes a portion of the source layer at the bottom of the pillar. A gate oxide film is formed over exposed layers in the semiconductor structure and over the exposed portion of the source layer. A sacrificial silicon liner is formed over the gate oxide, and subsequently both the gate oxide and the sacrificial silicon liner are removed from the pillar bottom in an anisotropic dry etch (“punch”) process that exposes the source layer.