Patents by Inventor JOSE FERNANDEZ VILLASENOR
JOSE FERNANDEZ VILLASENOR has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10107779Abstract: Embodiments of sensing devices include one or more integrated circuit (IC) die, a housing, and a fluid barrier material. Each IC die includes an electrode-bearing surface and a contact surface. One of the die includes an SFET with a sensing electrode proximate to the electrode-bearing surface. The same or a different die includes a reference electrode proximate to the electrode-bearing surface. The die(s) also include IC contacts at the contact surface(s), and conductive structures coupled between the SFET, the reference electrode, and the IC contacts. The housing includes a mounting surface, and housing contacts formed at the mounting surface. The IC contacts are coupled to the housing contacts. The fluid barrier material is positioned between the mounting surface and the IC die. The fluid barrier material provides a fluid barrier between the IC and housing contacts and a space that encompasses the sensing electrode and the reference electrode.Type: GrantFiled: February 27, 2018Date of Patent: October 23, 2018Assignee: NXP USA, INC.Inventors: Raymond M. Roop, Jose Fernandez Villasenor, Stephen R. Hooper, Patrice M. Parris
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Publication number: 20180188203Abstract: Embodiments of sensing devices include one or more integrated circuit (IC) die, a housing, and a fluid barrier material. Each IC die includes an electrode-bearing surface and a contact surface. One of the die includes an SFET with a sensing electrode proximate to the electrode-bearing surface. The same or a different die includes a reference electrode proximate to the electrode-bearing surface. The die(s) also include IC contacts at the contact surface(s), and conductive structures coupled between the SFET, the reference electrode, and the IC contacts. The housing includes a mounting surface, and housing contacts formed at the mounting surface. The IC contacts are coupled to the housing contacts. The fluid barrier material is positioned between the mounting surface and the IC die. The fluid barrier material provides a fluid barrier between the IC and housing contacts and a space that encompasses the sensing electrode and the reference electrode.Type: ApplicationFiled: February 27, 2018Publication date: July 5, 2018Inventors: Raymond M. ROOP, Jose FERNANDEZ VILLASENOR, Stephen R. HOOPER, Patrice M. PARRIS
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Patent number: 9927392Abstract: Embodiments of sensing devices include one or more integrated circuit (IC) die, a housing, and a fluid barrier material. Each IC die includes an electrode-bearing surface and a contact surface. One of the die includes an SFET with a sensing electrode proximate to the electrode-bearing surface. The same or a different die includes a reference electrode proximate to the electrode-bearing surface. The die(s) also include IC contacts at the contact surface(s), and conductive structures coupled between the SFET, the reference electrode, and the IC contacts. The housing includes a mounting surface, and housing contacts formed at the mounting surface. The IC contacts are coupled to the housing contacts. The fluid barrier material is positioned between the mounting surface and the IC die. The fluid barrier material provides a fluid barrier between the IC and housing contacts and a space that encompasses the sensing electrode and the reference electrode.Type: GrantFiled: August 14, 2014Date of Patent: March 27, 2018Assignee: NXP USA, INC.Inventors: Raymond M. Roop, Jose Fernandez Villasenor, Stephen R. Hooper, Patrice M. Parris
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Patent number: 9857329Abstract: Protected sensor field effect transistors (SFETs). The SFETs include a semiconductor substrate, a field effect transistor, and a sense electrode. The SFETs further include an analyte-receiving region that is supported by the semiconductor substrate, is in contact with the sense electrode, and is configured to receive an analyte fluid. The analyte-receiving region is at least partially enclosed. In some embodiments, the analyte-receiving region can be an enclosed analyte channel that extends between an analyte inlet and an analyte outlet. In these embodiments, the enclosed analyte channel extends such that the analyte inlet and the analyte outlet are spaced apart from the sense electrode. In some embodiments, the SFETs include a cover structure that at least partially encloses the analyte-receiving region and is formed from a cover material that is soluble within the analyte fluid. The methods include methods of manufacturing the SFETs.Type: GrantFiled: August 30, 2016Date of Patent: January 2, 2018Assignee: NXP USA, Inc.Inventors: Patrice M. Parris, Weize Chen, Richard J. de Souza, Jose Fernandez Villasenor, Md M. Hoque, David E. Niewolny, Raymond M. Roop
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Publication number: 20160370314Abstract: Protected sensor field effect transistors (SFETs). The SFETs include a semiconductor substrate, a field effect transistor, and a sense electrode. The SFETs further include an analyte-receiving region that is supported by the semiconductor substrate, is in contact with the sense electrode, and is configured to receive an analyte fluid. The analyte-receiving region is at least partially enclosed. In some embodiments, the analyte-receiving region can be an enclosed analyte channel that extends between an analyte inlet and an analyte outlet. In these embodiments, the enclosed analyte channel extends such that the analyte inlet and the analyte outlet are spaced apart from the sense electrode. In some embodiments, the SFETs include a cover structure that at least partially encloses the analyte-receiving region and is formed from a cover material that is soluble within the analyte fluid. The methods include methods of manufacturing the SFETs.Type: ApplicationFiled: August 30, 2016Publication date: December 22, 2016Applicant: Freescale Semiconductor, Inc.Inventors: Patrice M. Parris, Weize Chen, Richard J. de Souza, Jose Fernandez Villasenor, Md M. Hoque, David E. Niewolny, Raymond M. Roop
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Publication number: 20160356740Abstract: Protected sensor field effect transistors (SFETs). The SFETs include a semiconductor substrate, a field effect transistor, and a sense electrode. The SFETs further include an analyte-receiving region that is supported by the semiconductor substrate, is in contact with the sense electrode, and is configured to receive an analyte fluid. The analyte-receiving region is at least partially enclosed. In some embodiments, the analyte-receiving region can be an enclosed analyte channel that extends between an analyte inlet and an analyte outlet. In these embodiments, the enclosed analyte channel extends such that the analyte inlet and the analyte outlet are spaced apart from the sense electrode. In some embodiments, the SFETs include a cover structure that at least partially encloses the analyte-receiving region and is formed from a cover material that is soluble within the analyte fluid. The methods include methods of manufacturing the SFETs.Type: ApplicationFiled: June 5, 2015Publication date: December 8, 2016Applicant: Freescale Semiconductor, Inc.Inventors: Patrice M. Parris, Weize Chen, Richard J. de Souza, Jose Fernandez Villasenor, Md M. Hoque, David E. Niewolny, Raymond M. Roop
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Patent number: 9494550Abstract: Protected sensor field effect transistors (SFETs). The SFETs include a semiconductor substrate, a field effect transistor, and a sense electrode. The SFETs further include an analyte-receiving region that is supported by the semiconductor substrate, is in contact with the sense electrode, and is configured to receive an analyte fluid. The analyte-receiving region is at least partially enclosed. In some embodiments, the analyte-receiving region can be an enclosed analyte channel that extends between an analyte inlet and an analyte outlet. In these embodiments, the enclosed analyte channel extends such that the analyte inlet and the analyte outlet are spaced apart from the sense electrode. In some embodiments, the SFETs include a cover structure that at least partially encloses the analyte-receiving region and is formed from a cover material that is soluble within the analyte fluid. The methods include methods of manufacturing the SFETs.Type: GrantFiled: June 5, 2015Date of Patent: November 15, 2016Assignee: Freescale Semiconductor, Inc.Inventors: Patrice M. Parris, Weize Chen, Richard J. de Souza, Jose Fernandez Villasenor, Md M. Hoque, David E. Niewolny, Raymond M. Roop
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Publication number: 20160047775Abstract: Embodiments of sensing devices include one or more integrated circuit (IC) die, a housing, and a fluid barrier material. Each IC die includes an electrode-bearing surface and a contact surface. One of the die includes an SFET with a sensing electrode proximate to the electrode-bearing surface. The same or a different die includes a reference electrode proximate to the electrode-bearing surface. The die(s) also include IC contacts at the contact surface(s), and conductive structures coupled between the SFET, the reference electrode, and the IC contacts. The housing includes a mounting surface, and housing contacts formed at the mounting surface. The IC contacts are coupled to the housing contacts. The fluid barrier material is positioned between the mounting surface and the IC die. The fluid barrier material provides a fluid barrier between the IC and housing contacts and a space that encompasses the sensing electrode and the reference electrode.Type: ApplicationFiled: August 14, 2014Publication date: February 18, 2016Inventors: RAYMOND M. ROOP, JOSE FERNANDEZ VILLASENOR, STEPHEN R. HOOPER, PATRICE M. PARRIS