Abstract: An off-line power converter includes an integrated circuit power factor controller including a multi-function input terminal, a drive terminal for providing a drive signal to a gate of a drive transistor, a processing circuit coupled to the multi-function input terminal and, based on a signal received from the multi-function input terminal, providing at least one current signal representative of a current conducted in the off-line power converter, and at least one voltage signal representative of a voltage provided to a load, and a controller for providing the drive signal selectively in response to the at least one current signal and the at least one voltage signal.

Abstract: An off-line power converter includes an integrated circuit power factor controller including a multi-function input terminal, a drive terminal for providing a drive signal to a gate of a drive transistor, a processing circuit coupled to the multi-function input terminal and, based on a signal received from the multi-function input terminal, providing at least one current signal representative of a current conducted in the off-line power converter, and at least one voltage signal representative of a voltage provided to a load, and a controller for providing the drive signal selectively in response to the at least one current signal and the at least one voltage signal.

Abstract: In one embodiment, a power supply controller is configured to turn off a first output transistor but inhibit turning off a second output transistor.

Abstract: In one embodiment, a power supply controller is configured to turn off a first output transistor but inhibit turning off a second output transistor.

Abstract: A power supply controller (25) is configured to accurately adjust the value of an output voltage of a power supply system (10) responsively to the output voltage increasing to an undesirable value. The controller (25) accurately limits an upper value of the output voltage during a light load condition, and rapidly reduces the value of the output voltage to a desired value. The power supply controller is configured to turn off the first output transistor but inhibit turning off the second output transistor using two different control signals.

Abstract: A power supply controller (25) is configured to accurately adjust the value of an output voltage of a power supply system (10) responsively to the output voltage increasing to an undesirable value. The controller (25) accurately limits an upper value of the output voltage during a light load condition, and rapidly reduces the value of the output voltage during a light load condition, and different control signals to control the switching of the output transistors facilitates rapidly reducing the output voltage.

Abstract: A power supply controller (25) is configured to accurately adjust the value of an output voltage of a power supply system (10) responsively to the output voltage increasing to an undesirable value. The controller (25) accurately limits an upper value of the output voltage during a light load condition, and rapidly reduces the value of the output voltage to a desired value. The power supply controller is configured to turn off the first output transistor but inhibit turning off the second output transistor using two different control signals.

Abstract: A power supply controller (25) is configured to accurately adjust the value of an output voltage of a power supply system (10) responsively to the output voltage increasing to an undesirable value. The controller (25) accurately limits an upper value of the output voltage during a light load condition, and rapidly reduces the value of the output voltage during a light load condition, and different control signals to control the switching of the output transistors facilitates rapidly reducing the output voltage.

Abstract: An improved bipolar transistor (202) has an increased Early voltage and can be integrated on a semiconductor die with MOS transistors (201) and other types of devices to form an integrated circuit (200). A p-type base region (240) is disposed in an n-type collector region (252). An n-type emitter region (244) is disposed within the base region, and a p-type enhancement region (250) is formed to extend under the emitter region to a depth greater than the base depth. The improved bipolar transistor can be fabricated without significantly affecting the operation of other devices on the integrated circuit.