Patents by Inventor Jose M. Moran-Mirabal

Jose M. Moran-Mirabal has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8541940
    Abstract: The invention teaches electrospun light-emitting fibers made from ionic transition metal complexes (“iTMCs”) such as [Ru(bpy)3]2+(PF6?)2]/PEO mixtures with dimensions in the 10.0 nm to 5.0 micron range and capable of highly localized light emission at low operating voltages such as 3-4 V with turn-on voltages approaching the band-gap limit of the organic semiconductor that may be used as point source light emitters on a chip.
    Type: Grant
    Filed: December 27, 2011
    Date of Patent: September 24, 2013
    Assignee: Cornell University
    Inventors: Jose M. Moran-Mirabal, Harold G. Craighead, George G. Malliaras, Héctor D. Abruna, Jason D. Slinker
  • Publication number: 20120097832
    Abstract: The invention teaches electrospun light-emitting fibers made from ionic transition metal complexes (‘iTMCs”) such as [Ru(bpy)3]2+(PF6?)2]/PEO mixtures with dimensions in the 10.0 nm to 5.0 micron range and capable of highly localized light emission at low operating voltages such as 3-4 V with turn-on voltages approaching the band-gap limit of the organic semiconductor that may be used as point source light emitters on a chip.
    Type: Application
    Filed: December 27, 2011
    Publication date: April 26, 2012
    Applicant: CORNELL UNIVERSITY
    Inventors: Jose M. Moran-Mirabal, Harold G. Craighead, George G. Malliaras, Hector D. Abruna, Jason D. Slinker
  • Patent number: 8106580
    Abstract: The invention teaches electrospun light-emitting fibers made from ionic transition metal complexes (“iTMCs”) such as [Ru(bpy)3]2+(PF6.)2]/PEO mixtures with dimensions in the 10.0 nm to 5.0 micron range and capable of highly localized light emission at low operating voltages such as 3-4 V with turn-on voltages approaching the band-gap limit of the organic semiconductor that may be used as point source light emitters on a chip.
    Type: Grant
    Filed: September 18, 2008
    Date of Patent: January 31, 2012
    Assignee: Cornell University
    Inventors: Jose M. Moran-Mirabal, Harold G. Craighead, George G. Malliaras, Hector D. Abruna, Jason D. Slinker
  • Publication number: 20090072728
    Abstract: The invention teaches electrospun light-emitting fibers made from ionic transition metal complexes (“iTMCs”) such as [Ru(bpy)3]2+(PF6.)2]/PEO mixtures with dimensions in the 10.0 nm to 5.0 micron range and capable of highly localized light emission at low operating voltages such as 3-4 V with turn-on voltages approaching the band-gap limit of the organic semiconductor that may be used as point source light emitters on a chip.
    Type: Application
    Filed: September 18, 2008
    Publication date: March 19, 2009
    Applicant: Cornell University
    Inventors: Jose M. Moran-Mirabal, Harold G. Craighead, George G. Malliaras, Hector D. Abruna, Jason D. Slinker