Abstract: A method and system are provided using an offset dial gage for alignment and adjustment of a polishing pad that has been attached to a turntable of a chemical mechanical polishing (CMP) device. In a described embodiment, an offset dial gage has a surface that contacts a side of a turntable, while a sensor tip contacts the edge of a polishing pad positioned on the turntable. This provides an assessment of radial displacement of the polishing pad edge at this measurement point relative to the side of the turntable. Based on one or more such measurements, the polishing pad may be found acceptably positioned, may be trimmed, or may be replaced. The method and system reduce or eliminate the occurrence of a defect pattern found to be related to side unloading of semiconductor wafers from a CMP turntable.

Abstract: A method and system are provided using an offset dial gage for alignment and adjustment of a polishing pad that has been attached to a turntable of a chemical mechanical polishing (CMP) device. In a described embodiment, an offset dial gage has a surface that contacts a side of a turntable, while a sensor tip contacts the edge of a polishing pad positioned on the turntable. This provides an assessment of radial displacement of the polishing pad edge at this measurement point relative to the side of the turntable. Based on one or more such measurements, the polishing pad may be found acceptably positioned, may be trimmed, or may be replaced. The method and system reduce or eliminate the occurrence of a defect pattern found to be related to side unloading of semiconductor wafers from a CMP turntable.

Abstract: Disclosed herein is a process for diminishing contamination of an integrated circuit wafer caused by residual slurry components disposed on a back side of a carrier for engaging an integrated circuit wafer. Also disclosed is a CMP machine configured to wash a back side of a carrier.

Abstract: A carrier head for supporting a wafer during a chemical mechanical polishing process is provided. In one exemplary implementation, the carrier head may comprise a wear ring, and a slidably movable pressure plate disposed within the wear ring. The pressure plate may be arranged to provide slidable movement relative to the wear ring. This degree of freedom can accommodate height dimensional changes that may occur in the wear ring.

Abstract: A chemical mechanical polishing (CMP) pad is provided. The CMP pad includes a groove pattern disposed on a polishing surface of the pad. The groove pattern is formed of an alternating sequence of spaced apart grooves. The alternating sequence of grooves comprises a groove of a first size and a groove of a second size, wherein the first and second groove sizes are different relative to one another.

Abstract: The present invention provides an improved conditioning wheel for conditioning polishing pads used to polish semiconductor wafers. In one embodiment, the conditioning wheel includes a planar body having a metal surface located thereon. The metal surface has abrasive particles embedded therein and a retainer coating deposited over the metal surface and the abrasive particles. The retainer coating inhibits the abrasive particles from dislodging during a conditioning process.

Abstract: The present invention provides an improved conditioning wheel for conditioning polishing pads used to polish semiconductor wafers. In one embodiment, the conditioning wheel includes a planar body having a metal surface located thereon. The metal surface has abrasive particles embedded therein and a retainer coating deposited over the metal surface and the abrasive particles. The retainer coating inhibits the abrasive particles from dislodging during a conditioning process.

Abstract: The present invention provides an improved conditioning wheel for conditioning polishing pads used to polish semiconductor wafers. The conditioning wheel includes a planar body and a homogeneous abrasive layer located on the planar body wherein the homogenous abrasive layer includes abrasive protrusions comprised of a same material as the homogenous abrasive layer.

Abstract: The present invention provides a terminal block extension for use with a terminal block having electrical contacts and that is electrically coupled to a wiring system. In one embodiment, the terminal block comprises an insulating body having first and second coupling ends and a first conductor disposed within the insulating body having first and second conducting ends. The first coupling end is configured to mechanically couple to the terminal block. The second coupling end is configured to mechanically couple to another terminal block extension. The first conducting end is configured to couple to one of the electrical contacts. The second conducting end is configured to receive a first wire of the wiring system and cooperatively engage a first coupling end of another terminal block extension.

Abstract: A non-destructive method for measuring the thickness loss of a polishing pad due to pad conditioning includes the use of rigid planar members placed on the surfaces of both the conditioned and non-conditioned sections of the polishing pad. Measurements are made using measurement instruments which overhang the depressed conditioned section and measure the height difference between the upper surfaces of the planar members. The measurement instruments may be repositioned and measurements repeated to obtain an average thickness loss.

Abstract: The present invention provides a wafer carrier for use with a semiconductor wafer polishing apparatus. In one embodiment, the wafer carrier comprises a carrying head having opposing first and second surfaces, a primary channel system formed in the second surface, and a secondary channel system formed in the second surface. The first surface is coupleable to the semiconductor polishing apparatus and the second surface is adapted to receive a semiconductor wafer to be polished. The primary channel system comprises first and second intersecting channels. The secondary channel system intersects the primary channel system so that the secondary channel system and the primary channel system cooperate to occupy a substantial portion of a surface area of the second surface. Therefore, the primary channel system and the secondary channel system decrease an amount of force required to remove the semiconductor wafer from the second surface.

Abstract: A method and apparatus for limiting or eliminating the edge effect in a chemical mechanical polishing apparatus comprising a substrate holder and a retaining ring spaced from and around the holder, a rotatable platen and a polishing pad on the platen, by essentially flattening the pad in the area in which it normally tends to deform. The invention is carried out by applying a fluid under pressure, preferably the polishing slurry, to the pad in the region of the gap between the retaining ring and the holder to substantially flatten the pad in the area around the edge of the substrate.

Abstract: The apparatus has a substantially planar base having a surface which defines a wafer cassette receiving station and a wafer receiving station. A transportable wafer cassette is removably coupled to the base in the wafer cassette receiving station. The transportable wafer cassette is provided for holding a plurality of wafers in an axially aligned manner, each of the wafers having identification indicia disposed on a surface thereof. A wafer receiving cassette is coupled to the base adjacent to the transportable wafer cassette in the wafer receiving station. A first reciprocally moveable wafer transfer member is attached to the base, and is operative for transferring the wafers held in the transportable wafer cassette to the wafer receiving cassette.