Abstract: A railroad network (10) having a track (12), a network energy supply (14) and a plurality of trains (16) that are connectable to the network energy supply (14) via means (20) for connecting the train (16) to the network energy supply (14) and each have an internal energy storage system (24) for receiving and storing energy originating from said train (16) or from trains (16) of the railroad network (10) and for supplying energy to said train (16) or to trains (16) of the railroad network (10). Each train (16) is able to switch from an operational state in which it is able to move along the system of rails (12) and an idle state in which it is unable to move along the system of rails (12) and vice versa. At least one of the trains (16) of the railroad network (10) is in the idle and energized state at the same time, its internal energy storage system (24) being connected to the network energy supply (14).

Abstract: A railroad network (10) having a track (12), a network energy supply (14) and a plurality of trains (16) that are connectable to the network energy supply (14) via means (20) for connecting the train (16) to the network energy supply (14) and each have an internal energy storage system (24) for receiving and storing energy originating from said train (16) or from trains (16) of the railroad network (10) and for supplying energy to said train (16) or to trains (16) of the railroad network (10). Each train (16) is able to switch from an operational state in which it is able to move along the system of rails (12) and an idle state in which it is unable to move along the system of rails (12) and vice versa. At least one of the trains (16) of the railroad network (10) is in the idle and energized state at the same time, its internal energy storage system (24) being connected to the network energy supply (14).

Abstract: The present invention relates to a power semiconductor device comprising a switching power semiconductor element, and a free wheeling diode in anti-parallel connection to the switching power semiconductor element. The power semiconductor is characterized in that a reverse electrode of the switching power semiconductor element and a reverse electrode of the free wheeling diode are bonded and mounted on a circuit pattern formed on the main surface of the first substrate, and that a circuit pattern, which is so formed on the main surface of the second substrate as to oppose a surface electrode of the switching power semiconductor element and a surface electrode of the free wheeling diode, is connected to the surface electrodes of the switching power semiconductor element and the free wheeling diode through connective conductors to be soldered, respectively.

Abstract: The present invention relates to a power semiconductor device comprising a switching power semiconductor element, and a free wheeling diode in anti-parallel connection to the switching power semiconductor element. The power semiconductor is characterized in that a reverse electrode of the switching power semiconductor element and a reverse electrode of the free wheeling diode are bonded and mounted on a circuit pattern formed on the main surface of the first substrate, and that a circuit pattern, which is so formed on the main surface of the second substrate as to oppose a surface electrode of the switching power semiconductor element and a surface electrode of the free wheeling diode, is connected to the surface electrodes of the switching power semiconductor element and the free wheeling diode through connective conductors to be soldered, respectively.

Abstract: The present invention relates to a power semiconductor device comprising a switching power semiconductor element, and a free wheeling diode in anti-parallel connection to the switching power semiconductor element. The power semiconductor is characterized in that a reverse electrode of the switching power semiconductor element and a reverse electrode of the free wheeling diode are bonded and mounted on a circuit pattern formed on the main surface of the first substrate, and that a circuit pattern, which is so formed on the main surface of the second substrate as to oppose a surface electrode of the switching power semiconductor element and a surface electrode of the free wheeling diode, is connected to the surface electrodes of the switching power semiconductor element and the free wheeling diode through connective conductors to be soldered, respectively.

Abstract: One of the aspects of the present invention is to provide a power semiconductor device, including a first substrate having a first circuit pattern formed thereon, and a second substrate having a second circuit pattern formed thereon. The first substrate has a first center line extending along a predetermined transverse direction. At least one power semiconductor chip is mounted on the first circuit pattern of the first substrate, and has at least one chip electrode opposing to the second circuit pattern of the second substrate. Also, a plurality of first conductive connectors on the first circuit pattern is provided for electrical connection with the second circuit pattern of the second substrate. The first conductive connectors are arranged symmetrically in relative to the first center line of the first substrate.

Abstract: A power switching module is provided having at least one power switch placed above at least one other power switch, each power switch in turn including an upper wall and a lower wall, each of which is cooled through thermal conduction by a cooling medium that circulates in channels and voids that are provided along the walls for this purpose.

Abstract: A method of testing a power module including a control gate, an emitter, a collector, at least one power component on a dielectric substrate and a diode connected in antiparallel with the power component measures partial discharges occurring between the emitter and the collector when an alternating current voltage source superimposed on a direct current voltage source is connected between the collector and the emitter of the power module. The voltage Vtest received by the power module between the collector and the emitter verifies at all times the condition Vtest>0 so that the diode never conducts. The power component is maintained in a turned off state during the test by a direct current voltage source connected between the control gate and the emitter.

Abstract: A power switching module is provided having at least one power switch placed above at least one other power switch, each power switch in turn including an upper wall and a lower wall, each of which is cooled through thermal conduction by a cooling medium that circulates in channels and voids that are provided along the walls for this purpose.

Abstract: An electronic power circuit substrate including a wafer of electrically insulating material, wherein said wafer presents a face supporting one or more conductive tracks directly connected to one or more electronic power components, said conductive tracks being obtained by fine metallization of said face to a thickness that is less than 150 &mgr;m.

Abstract: A method of testing a power module including a control gate, an emitter, a collector, at least one power component on a dielectric substrate and a diode connected in antiparallel with the power component measures partial discharges occurring between the emitter and the collector when an alternating current voltage source superimposed on a direct current voltage source is connected between the collector and the emitter of the power module. The voltage Vtest received by the power module between the collector and the emitter verifies at all times the condition Vtest>0 so that the diode never conducts. The power component is maintained in a turned off state during the test by means of a direct current voltage source connected between the control gate and the emitter.

Abstract: An electronic power circuit substrate including a wafer of electrically insulating material, wherein said wafer presents a face supporting one or more conductive tracks directly connected to one or more electronic power components, said conductive tracks being obtained by fine metallization of said face to a thickness that is less than 150&mgr;m.

Abstract: A substrate for an electronic circuit, the substrate comprising a wafer of silicon Si having a top face covered in an electrically insulating layer of silicon nitride SiN, said electrically insulating layer of silicon nitride supporting one or more conductive tracks obtained by metallizing the top face of said electrically insulating layer for the purpose of enabling one or more electronic components to be connected.