Abstract: A semiconductor package having an antenna; and a semiconductor die which is coupled to the antenna and comprises a transmitter configured to transmit wirelessly via the antenna a wireless signal having information on a local oscillator signal to a further semiconductor package comprising a further semiconductor die.

Abstract: A semiconductor package having an antenna; and a semiconductor die which is coupled to the antenna and comprises a transmitter configured to transmit wirelessly via the antenna a wireless signal having information on a local oscillator signal to a further semiconductor package comprising a further semiconductor die.

Abstract: A method for programming a one-time programmable structure is disclosed. The method comprises producing an electrical circuit having the one-time programmable structure. The method furthermore comprises severing the one-time programmable structure by etching the one-time programmable structure in a separating region.

Abstract: A semiconductor package having an antenna; and a semiconductor die which is coupled to the antenna and comprises a transmitter configured to transmit wirelessly via the antenna a wireless signal having information on a local oscillator signal to a further semiconductor package comprising a further semiconductor die.

Abstract: A method of manufacturing a semiconductor device package includes placing a semiconductor chip on a carrier, covering the semiconductor chip with an encapsulation material to form an encapsulation body, providing a microwave component having at least one electrically conducting wall structure integrated in the encapsulation body, and forming an electrical interconnect configured to electrically couple the semiconductor chip and the microwave component.

Abstract: A wireless communication system includes a first semiconductor module and a second semiconductor module. The first semiconductor module includes a semiconductor die connected to an antenna structure. The semiconductor die of the first semiconductor module and the antenna structure of the first semiconductor module are arranged within a common package. The semiconductor die of the first semiconductor module includes a transmitter module configured to transmit the wireless communication signal through the antenna structure of the first semiconductor module. The second semiconductor module includes a semiconductor die connected to an antenna structure. The semiconductor die of the second semiconductor module includes a receiver module configured to receive the wireless communication signal through the antenna structure of the second semiconductor module from the first semiconductor module.

Abstract: A bipolar transistor and a method for fabricating a bipolar transistor are disclosed. In one embodiment the bipolar transistor includes a semiconductor body including a collector region and a base region arranged on top of the collector region, the collector region being doped with dopants of a second doping type and the base region being at least partly doped with dopants of a first doping type and an insulating spacers arranged on top of the base region. The semiconductor body further includes a semiconductor layer including an emitter region arranged on the base region and laterally enclosed by the spacers, the emitter region being doped with dopants of the second doping type forming a pn-junction with the base region, wherein the emitter region is fully located above a horizontal plane through a bottom side of the spacers.

Abstract: A bipolar transistor and a method for fabricating a bipolar transistor are disclosed. In one embodiment the bipolar transistor includes a semiconductor body including a collector region and a base region arranged on top of the collector region, the collector region being doped with dopants of a second doping type and the base region being at least partly doped with dopants of a first doping type and an insulating spacers arranged on top of the base region. The semiconductor body further includes a semiconductor layer including an emitter region arranged on the base region and laterally enclosed by the spacers, the emitter region being doped with dopants of the second doping type forming a pn-junction with the base region, wherein the emitter region is fully located above a horizontal plane through a bottom side of the spacers.

Abstract: A method of manufacturing a semiconductor device package includes placing a semiconductor chip on a carrier, covering the semiconductor chip with an encapsulation material to form an encapsulation body, providing a microwave component having at least one electrically conducting wall structure integrated in the encapsulation body, and forming an electrical interconnect configured to electrically couple the semiconductor chip and the microwave component.

Abstract: A bipolar transistor and a method for fabricating a bipolar transistor are disclosed. In one embodiment the bipolar transistor includes a semiconductor body including a collector region and a base region arranged on top of the collector region, the collector region being doped with dopants of a second doping type and the base region being at least partly doped with dopants of a first doping type and an insulating spacers arranged on top of the base region.

Abstract: A method of manufacturing an array of semiconductor device packages includes placing a plurality of semiconductor chips on a temporary carrier, covering the plurality of semiconductor chips with an encapsulation material to form an encapsulation body, providing a plurality of microwave components each including at least one electrically conducting wall structure integrated in the encapsulation body, forming a plurality of electrical interconnects each configured to electrically couple a semiconductor chip and a microwave component, and separating the encapsulation body into single semiconductor device packages each including a semiconductor chip, a microwave component and an electrical interconnect.

Abstract: A bipolar transistor and a method for fabricating a bipolar transistor are disclosed. In one embodiment the bipolar transistor includes a semiconductor body including a collector region and a base region arranged on top of the collector region, the collector region being doped with dopants of a second doping type and the base region being at least partly doped with dopants of a first doping type and an insulating spacers arranged on top of the base region. The semiconductor body further includes a semiconductor layer including an emitter region arranged on the base region and laterally enclosed by the spacers, the emitter region being doped with dopants of the second doping type forming a pn-junction with the base region, wherein the emitter region is fully located above a horizontal plane through a bottom side of the spacers.

Abstract: A microwave device includes a semiconductor package comprising a microwave semiconductor chip and a waveguide part associated with the semiconductor package. The waveguide part is configured to transfer a microwave waveguide signal. It includes one or more pieces. The microwave device further includes a transformer element configured to transform a microwave signal from the microwave semiconductor chip into the microwave waveguide signal or to transform the microwave waveguide signal into a microwave signal for the microwave semiconductor chip.

Abstract: A method of manufacturing an array of semiconductor device packages includes placing a plurality of semiconductor chips on a temporary carrier, covering the plurality of semiconductor chips with an encapsulation material to form an encapsulation body, providing a plurality of microwave components each including at least one electrically conducting wall structure integrated in the encapsulation body, forming a plurality of electrical interconnects each configured to electrically couple a semiconductor chip and a microwave component, and separating the encapsulation body into single semiconductor device packages each including a semiconductor chip, a microwave component and an electrical interconnect.

Abstract: A semiconductor device package includes an encapsulant and a semiconductor chip. The semiconductor chip is at least partly embedded in the encapsulant. A microwave component including at least one electrically conducting wall structure is integrated in the encapsulant. Further, the semiconductor device package includes an electrical interconnect configured to electrically couple the microwave component to the semiconductor chip.

Abstract: A method includes providing a first semiconductor chip comprising a ring-shaped metal structure extending along a contour of a first main surface of the semiconductor chip. The method includes encapsulating the first semiconductor chip with an encapsulation body thereby defining a second main surface and depositing a metal layer over the first semiconductor chip and the encapsulation body. A plurality of external contact pads are placed over the second main surface of the encapsulation body, the metal layer electrically coupling at least one external contact pad of the plurality of external contact pads to the ring-shaped metal structure. A seal ring is placed between the ring-shaped metal structure and the contour of the first main surface of the first semiconductor chip.

Abstract: A microwave device includes a semiconductor package comprising a microwave semiconductor chip and a waveguide part associated with the semiconductor package. The waveguide part is configured to transfer a microwave waveguide signal. It includes one or more pieces. The microwave device further includes a transformer element configured to transform a microwave signal from the microwave semiconductor chip into the microwave waveguide signal or to transform the microwave waveguide signal into a microwave signal for the microwave semiconductor chip.

Abstract: A bipolar transistor and a method for fabricating a bipolar transistor are disclosed. In one embodiment the bipolar transistor includes a semiconductor body including a collector region and a base region arranged on top of the collector region, the collector region being doped with dopants of a second doping type and the base region being at least partly doped with dopants of a first doping type and an insulating spacers arranged on top of the base region. The semiconductor body further includes a semiconductor layer including an emitter region arranged on the base region and laterally enclosed by the spacers, the emitter region being doped with dopants of the second doping type forming a pn-junction with the base region, wherein the emitter region is fully located above a horizontal plane through a bottom side of the spacers.

Abstract: A wireless communication system includes a first semiconductor module and a second semiconductor module. The first semiconductor module includes a semiconductor die connected to an antenna structure. The semiconductor die of the first semiconductor module and the antenna structure of the first semiconductor module are arranged within a common package. The semiconductor die of the first semiconductor module includes a transmitter module configured to transmit the wireless communication signal through the antenna structure of the first semiconductor module. The second semiconductor module includes a semiconductor die connected to an antenna structure. The semiconductor die of the second semiconductor module includes a receiver module configured to receive the wireless communication signal through the antenna structure of the second semiconductor module from the first semiconductor module.

Abstract: A semiconductor module having one or more integrated antennas in a single package is provided herein. The semiconductor module has a bonding interconnect structure that connects an integrated package to a printed circuit board (PCB), wherein the integrated antenna structures are located at greater center-to-center distance from the IC device than the three dimensional interconnect structures. Therefore, the bonding interconnect structures are confined to a connection area that causes a part of the package containing the one or more antenna structures to extend beyond the bonding interconnect structure as a cantilevered structure. Such a bonding interconnect structure result in a package that is in contact with a PCB at a relatively small area that supports the load of the package.