Abstract: A thyristor having improved high frequency performance is disclosed. The thyristor includes at least two parallel sequences of semiconductor zones wherein the carrier lifetime in the base region of a first sequence of zones is higher than in the corresponding base region of the second sequence of zones. The second sequence of zones is also more heavily doped at its outer extremities than the first sequence of zones. A method of making the improved thyristor is also disclosed and includes the step of diffusing recombination centers into the second sequence of zones in order to decrease carrier lifetime.