Patents by Inventor Josef Goeltzlich

Josef Goeltzlich has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4942554
    Abstract: In a three-dimensional, one-transistor cell arrangement for dynamic semiconductor memories, whereby the capacitor for the charges to be stored is fashioned as a trench capacitor in the substrate and, separated by an insulating layer, is arranged under the selection transistor comprising an insulated gate electrode and is connected to the source/drain zone thereof in electrically conductive fashion, and whereby the source/drain zones of the selection transistor are contained in a recrystallized silicon layer applied above the insulating layer, the electricity conductive contact to the capacitor is formed by an asymmetrical trench expansion introduced into the substrate in the upper part of the trench, this asymmetrical trench expansion being filled with polycrystalline silicon having the same doping as in the trench, and the source/drain zones are produced such by ion implantation in the recrystallized silicon layer that the source zone overlaps the electrically conductive contact in the asymmetrical trench ex
    Type: Grant
    Filed: October 18, 1988
    Date of Patent: July 17, 1990
    Assignee: Siemens Aktiengesellschaft
    Inventors: Roland Kircher, Josef Goeltzlich