Abstract: A device including a gate driver stage, a decoupling circuit, and a semiconductor switch. The semiconductor switch has at least a first semiconductor transistor and a second semiconductor transistor. The first semiconductor transistor and the second semiconductor transistor are connected in parallel to one another. The decoupling circuit is electrically connected on the input side to an output of the gate driver stage and on the output side to the semiconductor switch. The decoupling circuit has a first decoupling path and a second decoupling path. The first decoupling path is electrically connected to a first gate terminal of the first semiconductor transistor and the second decoupling path is electrically connected to a second gate terminal of the second semiconductor transistor. The first decoupling path and the second decoupling path are connected in parallel to one another, and are constructed identically.

Abstract: An electric circuit for a high-voltage network of a vehicle. the high-voltage network includes at least two electrical energy stores. The electric circuit includes a first and second connection points, which are configured for electrical connection to a consumer (19) and/or a charger (21). A first switching unit is arranged between a first pole connector and the first connection point. A second switching unit is arranged between a second pole connector and the second connection point. A third switching unit is arranged between the first connection point and a third pole connector, and a fourth switching unit is arranged between the second connection point and a fourth pole connector. The first switching unit and/or the second switching unit are designed to be galvanically isolating in an electrically disconnecting state, and the third and fourth switching units are embodied as semiconductor components.

Abstract: A switching assembly for an electrical energy storage system having a first energy storage unit and a second energy storage unit, each having a first pole terminal and a second pole terminal, comprising: at least a first output and a second output for electrically conductive connection to at least one electrical component, a first switching unit arranged between the first pole terminal of the first energy storage unit and the first output, a second switching unit arranged between the second pole terminal of the first energy storage unit and the second output, a third switching unit arranged between the first pole terminal of the second energy storage unit and the first output, a fourth switching unit arranged between the second pole terminal of the second energy storage unit and the second output, a fifth switching unit arranged between the second pole terminal of the first energy storage unit and the first pole terminal of the second energy storage unit, wherein the first switching unit is connected to th

Abstract: A power module. The power module has a substrate and at least one power transistor situated on a lower side of the substrate, and at least one temperature sensor situated in the power module. At least one primary temperature sensor is situated on an upper side opposite the at least one power transistor or in an inner substrate layer situated above the at least one power transistor. At least one reference temperature sensor for providing a comparison temperature is situated at a distance from all power transistors, on the upper side or on one of the inner substrate layers. As a result, the transistor temperature can be measured closer to the source of the heat and a reference temperature is provided for detecting resistance changes due to material aging.

Abstract: A cascade arrangement and to a semiconductor module. The cascode arrangement includes: a substrate, a JFET, a MOSFET, and at least one sensor system. A drain terminal of the MOSFET is electrically connected to a source terminal of the JFET and a source terminal of the MOSFET is electrically connected to a gate terminal of the JFET. A first semiconductor layer in which the MOSFET is formed and a second semiconductor layer in which the JFET is formed, are situated stacked on top of one another via a connecting material. Both an electrical and a thermal coupling between the JFET and the MOSFET are implemented via the connecting material. The stacked semiconductor layers are situated on the substrate. The first semiconductor layer includes a first subarea in which the MOSFET is formed and at least one second subarea in which the at least one sensor system is formed.

Abstract: An electric circuit for a high-voltage network of a vehicle. the high-voltage network includes at least two electrical energy stores. The electric circuit includes a first and second connection points, which are configured for electrical connection to a consumer (19) and/or a charger (21). A first switching unit is arranged between a first pole connector and the first connection point. A second switching unit is arranged between a second pole connector and the second connection point. A third switching unit is arranged between the first connection point and a third pole connector, and a fourth switching unit is arranged between the second connection point and a fourth pole connector. The first switching unit and/or the second switching unit are designed to be galvanically isolating in an electrically disconnecting state, and the third and fourth switching units are embodied as semiconductor components.

Abstract: A power module for producing structure-borne sound. The power module includes: a control unit and a first substrate, the control unit being situated on the first substrate; at least one first power semiconductor and at least one second power semiconductor, the first substrate being situated on the at least one first power semiconductor and on the at least one second power semiconductor; a first metal connection, a second substrate, and a second metal connection, the first metal connection electrically connecting the first substrate and the second substrate, and the second metal connection being situated below the second substrate, wherein the second substrate has a piezoelectric material and the control unit is set up to excite the piezoelectric material of the second substrate so that a structure-borne sound signal is produced.

Abstract: A method for near field communication with a component of an electric welding installation is provided, wherein data and/or programs are transmitted via an NFC communication channel. In order to render the method easy to operate and to allow for spontaneous communication with the component of the welding installation, the data and/or programs are embedded in a URI or in a MIME format and are transmitted in a standard format of NFC data transmission via the NFC communication channel between the mobile terminal device and the component of the welding installation. The data and/or programs transmitted from the mobile terminal device are extracted by and directly processed by the component of the welding installation without establishing a connection to a web-based resource and without necessarily presenting the URI data content or MIME data content. Furthermore, a component of an electric welding installation is provided for carrying out the method.

Abstract: A method for extending the functionality of an electric welding apparatus having a programmable control unit and an input device is provided. In order to provide the user with greater latitude for a desired functional extension while nevertheless ensuring that unauthorized functional extension can be prevented, a control command for a desired functional extension is issued to the control unit and the control unit uses the control command or the functional extension to generate an apparatus code which is transmitted to an external verifying facility. The external verifying facility uses the apparatus code to verify entitlement to the functional extension and, if entitlement exists, generates an external activation code which is transmitted to the control unit. The control unit then verifies the validity of the external activation code and, if it is valid, implements the functional extension. A welding apparatus for carrying out the method is also proposed.