Patents by Inventor Josef Höglauer
Josef Höglauer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11978692Abstract: A semiconductor package includes a semiconductor die having opposing first and second main surfaces, a first power electrode on the first main surface and a second power electrode on the second main surface, a first lead having an inner surface attached to the first power electrode and a distal end having a first protruding side face extending substantially perpendicularly to the first main surface of the die, a second lead having an inner surface attached to the second power electrode and a distal end having a second protruding side face extending substantially perpendicularly to the second main surface of the die, and a mold compound enclosing at least part of the die and at least part of the first and second leads. The first lead includes a recess positioned in an edge of the inner surface. The second lead includes a recess positioned in an edge of the inner surface.Type: GrantFiled: September 10, 2021Date of Patent: May 7, 2024Assignee: Infineon Technologies Austria AGInventors: Sergey Yuferev, Josef Hoeglauer, Gerhard Noebauer, Hao Zhuang
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Publication number: 20240047431Abstract: A method of forming a semiconductor module comprises forming a laminate structure having an electrically insulating core layer with opposing first and second sides, a first redistribution layer arranged on the first side and a second redistribution layer arranged on the second side. First and second transistor devices are coupled to form a half-bridge circuit. Bots transistor devices have a first side at which a cell field is arranged and an opposing second side. A control chip has a first side with contact pads. The transistor devices and control chip are arranged laterally adjacent one another and embedded in the core layer. The first side of the control chip and one transistor device and the second side of the other transistor device face towards the first redistribution layer on the first side of the core layer.Type: ApplicationFiled: October 19, 2023Publication date: February 8, 2024Inventors: Angela Kessler, Josef Hoeglauer, Gerhard Noebauer
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Publication number: 20240030111Abstract: A semiconductor package includes low voltage and high voltage contact pads, an output contact pad, a half-bridge circuit, and first, second and third leads. The half bridge circuit includes first and second transistor devices coupled in series at an output node. Both transistor devices have a first major surface which extends substantially perpendicularly to the low voltage contact pad, the high voltage contact pad, and the output contact pad. Both transistor devices are arranged in a device portion of the package and are mounted on a first lead, the first lead providing the output contact pad and being arranged on a first side of the device portion. The second and third leads are arranged in a common plane on a second side of the device portion that opposes the first side. The second lead provides the low voltage pad and the third second lead provides the high voltage output pad.Type: ApplicationFiled: July 12, 2023Publication date: January 25, 2024Inventors: Sergey Yuferev, Josef Höglauer, Gerhard Thomas Nöbauer, Hao Zhuang
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Patent number: 11817430Abstract: A semiconductor module includes a laminate structure having an electrically insulating core layer with opposing first and second sides, a first redistribution layer arranged on the first side and a second redistribution layer arranged on the second side. First and second transistor devices are coupled to form a half-bridge circuit. Both transistor devices have a first side at which a cell field is arranged and an opposing second side. A control chip has a first side with contact pads. The transistor devices and control chip are arranged laterally adjacent one another and embedded in the core layer. The first side of the control chip and one transistor device and the second side of the other transistor device face towards the first redistribution layer on the first side of the core layer.Type: GrantFiled: September 21, 2021Date of Patent: November 14, 2023Assignee: Infineon Technologies Austria AGInventors: Angela Kessler, Josef Hoeglauer, Gerhard Noebauer
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Patent number: 11776882Abstract: A method includes: arranging a semiconductor device on a redistribution substrate, the device having a first power electrode and a control electrode on a first surface and a second power electrode on a second surface, the redistribution substrate having an insulating board having a first major surface and a second major surface having solderable contact pads, so that the first power electrode is arranged on a first conductive pad and the control electrode is arranged on a second conductive pad on the first major surface; arranging a contact clip such that a web portion is arranged on the second power electrode and a peripheral rim portion is arranged on a third conductive pad on the first major surface; and electrically coupling the first power electrode, control electrode and peripheral rim portion to the respective conductive pads and electrically coupling the web portion to the second power electrode.Type: GrantFiled: April 4, 2022Date of Patent: October 3, 2023Assignee: Infineon Technologies Austria AGInventors: Markus Dinkel, Petteri Palm, Eung San Cho, Josef Hoeglauer, Ralf Otremba, Fabian Schnoy
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Publication number: 20230230903Abstract: A semiconductor chip is provided. The semiconductor chip may include a front side including a control chip contact and a first controlled chip contact, a back side including a second controlled chip contact, a backside metallization formed over the back side in contact with the second controlled chip contact, and a stop region extending at least partially along an outer edge of the back side between a contact portion of the backside metallization and the outer edge of the back side. The contact portion is configured to be attached to an electrically conductive structure by a die attach material, a surface of the stop region is recessed with respect to a surface of the contact portion, and/or the surface of the stop region has a lower wettability with respect to the die attach material than the contact portion.Type: ApplicationFiled: December 21, 2022Publication date: July 20, 2023Applicant: Infineon Technologies AGInventors: Hooi Boon TEOH, Hao ZHUANG, Oliver BLANK, Paul Armand CALO, Markus DINKEL, Josef Höglauer, Daniel Hölzl, Wee Aun JASON LIM, Gerhard Thomas Nöbauer, Ralf OTREMBA, Martin Pölzl, Ying Pok SAM, Xaver Schlögel, Chee Voon TAN
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Publication number: 20230197577Abstract: A semiconductor device includes a premolded leadframe, including a main surface, at least one electrical contact extending out of the main surface, and an opposite main surface arranged opposite to the main surface. The semiconductor device further includes a semiconductor package arranged on the main surface and laterally displaced to the at least one electrical contact of the premolded leadframe. The semiconductor package includes a semiconductor chip and at least one electrical contact. Surfaces of the at least one electrical contact of the premolded leadframe and the at least one electrical contact of the semiconductor package facing away from the main surface are flush.Type: ApplicationFiled: December 15, 2022Publication date: June 22, 2023Inventors: Thorsten Scharf, Josef Höglauer, Angela Kessler, Claus Waechter
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Publication number: 20230197663Abstract: A method of processing a semiconductor wafer includes: forming an electronic device at each die location of the semiconductor wafer; partially forming a frontside metallization over a frontside of the semiconductor wafer at each die location; partially forming a backside metallization over a backside of the semiconductor wafer at each die location; and after partially forming both the frontside metallization and the backside metallization but without completing either the frontside metallization or the backside metallization, singulating the semiconductor wafer between the die locations to form a plurality of individual semiconductor dies, wherein the partially formed frontside metallization and the partially formed backside metallization have a same composition. Semiconductor dies and methods of producing semiconductor modules are also described.Type: ApplicationFiled: December 20, 2021Publication date: June 22, 2023Inventors: Chuan Cheah, Josef Hoeglauer, Tobias Polster
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Publication number: 20230168023Abstract: A cryostat socket for holding an ion trap device mounted on a substrate in a cryostat includes a housing frame provided for pre-assembly in the cryostat. A pin insert is arranged in the housing frame. The pin insert includes a base plate and contact pins. The contact pins are arranged in an array. A housing cover has a receptacle for the substrate. The housing cover, when assembled with the housing frame, exerts a compressive force on a front side of the substrate by which a rear side of the substrate is pressed onto the contact pins.Type: ApplicationFiled: November 21, 2022Publication date: June 1, 2023Inventors: Günther Lohmann, Ralf Otremba, Josef Höglauer, Clemens Rössler, Silke Katharina Auchter
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Publication number: 20230127874Abstract: A power semiconductor system includes: a power stage module having one or more power transistor dies attached to or embedded in a first printed circuit board; and an inductor module attached to the power stage module and having an inductor electrically connected to an output node of the power stage module. The inductor includes windings patterned into a second printed circuit board of the inductor module.Type: ApplicationFiled: December 22, 2022Publication date: April 27, 2023Inventors: Petteri Palm, Frank Daeche, Zeeshan Umar, Andrew Sawle, Maciej Wojnowski, Xaver Schloegel, Josef Hoeglauer
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Publication number: 20230051100Abstract: A molded semiconductor package includes a lead frame having one or more first leads monolithically formed with a die pad and extending outward from the pad in a first direction. A semiconductor die is attached to the die pad at a first side of the die. A metal clip of a clip frame is attached to a power terminal at a second side of the die. One or more second leads monolithically formed with the metal clip extend outward from the clip in a second direction different than the first direction. A mold compound embeds the die. The first lead(s) and the second lead(s) are exposed at different sides of the mold compound and do not vertically overlap with one another. Within the mold compound, the clip transitions from a first level above the power terminal to a second level in a same plane as the leads.Type: ApplicationFiled: November 3, 2022Publication date: February 16, 2023Inventors: Bun Kian Tay, Mei Yih Goh, Martin Gruber, Josef Hoeglauer, Michael Juerss, Josef Maerz, Thorsten Meyer, Thorsten Scharf, Chee Voon Tan
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Patent number: 11539291Abstract: A method of manufacturing a power semiconductor system includes providing a power module having one or more power transistor dies and attaching an inductor module to the power module such that the inductor module is electrically connected to a node of the power module. The inductor module includes a substrate with a magnetic material and windings at one or more sides of the substrate. Further methods of manufacturing power semiconductor systems and methods of manufacturing inductor modules are also described.Type: GrantFiled: October 20, 2020Date of Patent: December 27, 2022Assignee: Infineon Technologies Austria AGInventors: Petteri Palm, Frank Daeche, Zeeshan Umar, Andrew Sawle, Maciej Wojnowski, Xaver Schloegel, Josef Hoeglauer
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Patent number: 11515244Abstract: A molded semiconductor package includes a lead frame having one or more first leads monolithically formed with a die pad and extending outward from the pad in a first direction. A semiconductor die is attached to the die pad at a first side of the die. A metal clip of a clip frame is attached to a power terminal at a second side of the die. One or more second leads monolithically formed with the metal clip extend outward from the clip in a second direction different than the first direction. A mold compound embeds the die. The first lead(s) and the second lead(s) are exposed at different sides of the mold compound and do not vertically overlap with one another. Within the mold compound, the clip transitions from a first level above the power terminal to a second level in a same plane as the leads.Type: GrantFiled: January 21, 2020Date of Patent: November 29, 2022Assignee: Infineon Technologies AGInventors: Bun Kian Tay, Mei Yih Goh, Martin Gruber, Josef Hoeglauer, Michael Juerss, Josef Maerz, Thorsten Meyer, Thorsten Scharf, Chee Voon Tan
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Publication number: 20220254696Abstract: A package and method of manufacturing is disclosed. In one example, the package which comprises a carrier with at least one component mounted on the carrier. A clip is arranged above the carrier and having a through hole. At least part of at least one of the at least one component and/or at least part of an electrically conductive connection element electrically connecting the at least one component is at least partially positioned inside the through hole.Type: ApplicationFiled: January 13, 2022Publication date: August 11, 2022Applicant: Infineon Technologies AGInventors: Angela KESSLER, Kok Yau CHUA, Josef HOEGLAUER, Chiah Chin LIM, Mei Qi TAY
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Publication number: 20220230941Abstract: A method includes: arranging a semiconductor device on a redistribution substrate, the device having a first power electrode and a control electrode on a first surface and a second power electrode on a second surface, the redistribution substrate having an insulating board having a first major surface and a second major surface having solderable contact pads, so that the first power electrode is arranged on a first conductive pad and the control electrode is arranged on a second conductive pad on the first major surface; arranging a contact clip such that a web portion is arranged on the second power electrode and a peripheral rim portion is arranged on a third conductive pad on the first major surface; and electrically coupling the first power electrode, control electrode and peripheral rim portion to the respective conductive pads and electrically coupling the web portion to the second power electrode.Type: ApplicationFiled: April 4, 2022Publication date: July 21, 2022Inventors: Markus Dinkel, Petteri Palm, Eung San Cho, Josef Hoeglauer, Ralf Otremba, Fabian Schnoy
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Patent number: 11302610Abstract: In an embodiment, a semiconductor package includes a package footprint having a plurality of solderable contact pads, a semiconductor device having a first power electrode and a control electrode on a first surface and a second power electrode on a second surface, a redistribution substrate having an insulating board, wherein the first power electrode and the control electrode are mounted on a first major surface of the insulating board and the solderable contact pads of the package footprint are arranged on a second major surface of the insulating board, and a contact clip having a web portion and one or more peripheral rim portions. The web portion is mounted on and electrically coupled to the second power electrode and the peripheral rim portion is mounted on the first major surface of the insulating board.Type: GrantFiled: October 30, 2019Date of Patent: April 12, 2022Assignee: Infineon Technologies Austria AGInventors: Markus Dinkel, Petteri Palm, Eung San Cho, Josef Hoeglauer, Ralf Otremba, Fabian Schnoy
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Publication number: 20220093573Abstract: A semiconductor module includes a laminate structure having an electrically insulating core layer with opposing first and second sides, a first redistribution layer arranged on the first side and a second redistribution layer arranged on the second side. First and second transistor devices are coupled to form a half-bridge circuit. Both transistor devices have a first side at which a cell field is arranged and an opposing second side. A control chip has a first side with contact pads. The transistor devices and control chip are arranged laterally adjacent one another and embedded in the core layer. The first side of the control chip and one transistor device and the second side of the other transistor device face towards the first redistribution layer on the first side of the core layer.Type: ApplicationFiled: September 21, 2021Publication date: March 24, 2022Inventors: Angela Kessler, Josef Hoeglauer, Gerhard Noebauer
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Publication number: 20220084915Abstract: A semiconductor package includes a semiconductor die having opposing first and second main surfaces, a first power electrode on the first main surface and a second power electrode on the second main surface, a first lead having an inner surface attached to the first power electrode and a distal end having a first protruding side face extending substantially perpendicularly to the first main surface of the die, a second lead having an inner surface attached to the second power electrode and a distal end having a second protruding side face extending substantially perpendicularly to the second main surface of the die, and a mold compound enclosing at least part of the die and at least part of the first and second leads. The first lead includes a recess positioned in an edge of the inner surface. The second lead includes a recess positioned in an edge of the inner surface.Type: ApplicationFiled: September 10, 2021Publication date: March 17, 2022Inventors: Sergey Yuferev, Josef Hoeglauer, Gerhard Noebauer, Hao Zhuang
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Publication number: 20210287964Abstract: A semiconductor device is disclosed. In one example, the semiconductor device includes a semiconductor chip including a first chip contact pad on a first chip main surface. The semiconductor device further includes a first electrically conductive layer arranged over the first chip main surface and electrically coupled to the first chip contact pad, wherein the first electrically conductive layer extends in a direction parallel to the first chip main surface. An electrical through connection is electrically coupled to the first electrically conductive layer and to a second electrically conductive layer, wherein the electrical through connection extends in a direction perpendicular to the first chip main surface, and wherein, in a top view of the first chip main surface, the electrical through connection and the semiconductor chip are non-overlapping.Type: ApplicationFiled: March 9, 2021Publication date: September 16, 2021Applicant: Infineon Technologies AGInventors: Petteri PALM, Robert FEHLER, Josef HOEGLAUER, Angela KESSLER
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Publication number: 20210166998Abstract: A molded semiconductor package includes a lead frame having one or more first leads monolithically formed with a die pad and extending outward from the pad in a first direction. A semiconductor die is attached to the die pad at a first side of the die. A metal clip of a clip frame is attached to a power terminal at a second side of the die. One or more second leads monolithically formed with the metal clip extend outward from the clip in a second direction different than the first direction. A mold compound embeds the die. The first lead(s) and the second lead(s) are exposed at different sides of the mold compound and do not vertically overlap with one another. Within the mold compound, the clip transitions from a first level above the power terminal to a second level in a same plane as the leads.Type: ApplicationFiled: February 16, 2021Publication date: June 3, 2021Inventors: Thorsten Scharf, Martin Gruber, Josef Hoeglauer, Michael Juerss, Josef Maerz, Thorsten Meyer, Bun Kian Tay