Abstract: Carrier with an electrically insulating base material, electrically conductive through-connections and a thermal connection element. The through-connections and the thermal connection element are each completely surrounded by the base material in the lateral direction, the thermal connection element and the through-connections completely penetrating the base material perpendicularly to the main extension plane of the carrier, and the thermal connection element being formed with a material which has a thermal conductivity of at least 200 W/(m K).

Abstract: In an embodiment a method for manufacturing optoelectronic components includes providing a metal sheet, milling the metal sheet, structuring the metal sheet into a lead frame blank with the intermediate pieces, applying a plurality of semiconductor devices to the intermediate pieces and separating to form the components. Each components may include an optoelectronic semiconductor device including at least two electrical contact surfaces on an assembly side, a lead frame base and electrical connection surfaces for external electrical contacting of the semiconductor device, wherein each base comprises at least two metallic intermediate pieces, wherein each of the intermediate pieces is fastened directly to one of the contact surfaces, and wherein the intermediate pieces are each L-shaped or T-shaped.

Abstract: Carrier with an electrically insulating base material, electrically conductive through-connections and a thermal connection element. The through-connections and the thermal connection element are each completely surrounded by the base material in the lateral direction, the thermal connection element and the through-connections completely penetrating the base material perpendicularly to the main extension plane of the carrier, and the thermal connection element being formed with a material which has a thermal conductivity of at least 200 W/(m K).