Patents by Inventor Josef Schaetz

Josef Schaetz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Power semiconductor device and method
    Patent number: 11652022
    Abstract: A power semiconductor device includes: a semiconductor body having a front side and a backside and configured to conduct a load current between the front side and the backside; and a plurality of control cells configured to control the load current. Each control cell is at least partially included in the semiconductor body at the front side and includes a gate electrode that is electrically insulated from the semiconductor body by a gate insulation layer. The gate insulation layer is or includes a first boron nitride layer.
    Type: Grant
    Filed: July 31, 2020
    Date of Patent: May 16, 2023
    Assignee: Infineon Technologies AG
    Inventors: Josef Schaetz, Dethard Peters, Stephan Pindl, Hans-Joachim Schulze
  • Power Semiconductor Device and Method
    Publication number: 20210035882
    Abstract: A power semiconductor device includes: a semiconductor body having a front side and a backside and configured to conduct a load current between the front side and the backside; and a plurality of control cells configured to control the load current. Each control cell is at least partially included in the semiconductor body at the front side and includes a gate electrode that is electrically insulated from the semiconductor body by a gate insulation layer. The gate insulation layer is or includes a first boron nitride layer.
    Type: Application
    Filed: July 31, 2020
    Publication date: February 4, 2021
    Inventors: Josef Schaetz, Dethard Peters, Stephan Pindl, Hans-Joachim Schulze