Abstract: A power semiconductor component which can be turned off by gate control and whose semiconductor body has a plurality of unit cells arranged side by side which are comprised of a p-emitter region (1) adjacent to the anode, an adjoining lightly doped n-base region (2), followed by a p-base region (3) and an n-emitter region (4) embedded therein and which unit cells form a thyristor structure. At least one p-region (5) is embedded in the n-emitter region (4) of the unit cells, with the p-region forming a ballast resistor and being provided with two ohmic contacts, one of which forms the outer cathode metallization (K), which has no contact with the n-emitter region (4), and the other of which is a floating contact (K') which simultaneously contacts the n-emitter region (4) ohmically.