Abstract: Method for producing a silicon ingot, comprising the following steps: providing a container to receive a silicon melt, providing a temperature control device to control the temperature of the silicon melt in the container, arranging raw material in the container comprising silicon and at least one nucleation agent to assist a heterogeneous nucleation in the silicon melt, and control of the temperature in the container for the directed solidification of the silicon melt, the nucleation agent comprising nanoscale particles.

Abstract: In order to produce silicon wafers, liquid ultra-pure silicon is solidified on a silicon monocrystalline seed arranged in the bottom area of a crucible and having a seed surface comprising a {110}-crystal orientation and an edge surface having a {100}-crystal orientation starting from the bottom of the crucible, thus forming a silicon block on the seed surface of the silicon monocrystalline seed which largely takes over the {110}-crystal orientation. Subsequently, the silicon block is divided into wafers with a wafer surface having a {100}-crystal orientation.

Abstract: Device for holding a silicon melt comprising a crucible, which partly surrounds an inner chamber for holding the melt, with a base and at least one side wall made of a base material, whereby the crucible comprises at least one equalizing means for equalizing mechanical thermal stresses.

Abstract: Method for producing a silicon ingot comprising the following steps: providing a container to receive a silicon melt, providing a temperature control device to control the temperature of the silicon melt in the container, arranging raw material in the container comprising silicon and at least one hydrogen-containing additive to reduce the formation of dislocations, and control of the temperature in the container (3) for the directed solidification of the silicon melt.

Abstract: Method for producing a silicon ingot, comprising the following steps: providing a container to receive a silicon melt, providing a temperature control device to control the temperature of the silicon melt in the container, arranging raw material in the container comprising silicon and at least one nucleation agent to assist a heterogeneous nucleation in the silicon melt, and control of the temperature in the container for the directed solidification of the silicon melt , the nucleation agent comprising nanoscale particles.

Abstract: In order to produce silicon wafers, liquid ultra-pure silicon is solidified on a silicon monocrystalline seed arranged in the bottom area of a crucible and having a seed surface comprising a {110}-crystal orientation and an edge surface having a {100}-crystal orientation starting from the bottom of the crucible, thus forming a silicon block on the seed surface of the silicon monocrystalline seed which largely takes over the {110}-crystal orientation. Subsequently, the silicon block is divided into wafers with a wafer surface having a {100}-crystal orientation.

Abstract: Oven for non-metal melting, in particular silicon melting, with a housing enclosing an interior, at least one mould arranged in the interior for receiving a non-metal melt, at least one electrical heating device enclosing, at least partially, the at least one mould for influencing the temperature of the non-metal melt, and a power supply device connected in an electrically conductive manner to the at least one heating device for providing the heating device with a time-variable current I(t), wherein the current I(t) has a frequency of 0.1 Hz to 1000 Hz and the current I(t) is of a magnitude sufficient for setting a predetermined temperature of the non-metal melt, the currents in the plurality, where necessary, of heaters having a defined phase position in respect of one another.

Abstract: Oven for non-metal melting, in particular silicon melting, with a housing enclosing an interior, at least one mould arranged in the interior for receiving a non-metal melt, at least one electrical heating device enclosing, at least partially, the at least one mould for influencing the temperature of the non-metal melt, and a power supply device connected in an electrically conductive manner to the at least one heating device for providing the heating device with a time-variable current I(t), wherein the current I(t) has a frequency of 0.1 Hz to 1000 Hz and the current I(t) is of a magnitude sufficient for setting a predetermined temperature of the non-metal melt, the currents in the plurality, where necessary, of heaters having a defined phase position in respect of one another.