Abstract: A bottom mount household refrigerator is provided with an ice dispenser in the fresh food door to dispense ice from a sealed ice making compartment within the fresh food compartment. A conveyor carries ice from a storage bin in the ice compartment to the dispenser.

Abstract: A bottom mount household refrigerator is provided with an apparatus to permit the dispensing of ice. According to one embodiment, a sealed ice making compartment is provided within the fresh food compartment. The sealed ice making compartment may be located at the bottom, at the top, or along a side wall within the fresh food compartment. According to another embodiment, ice is made in the ice compartment, and lifted upward to a dispensing location through the door of the fresh food compartment.

Abstract: The icemaker presented here may use a microcontroller, and solid state refrigeration and heat transfer elements to create ice cube qualities ranging from “clear ice” to “fast ice” in a smooth, user selectable continuum. In one embodiment, this may be accomplished by fitting a standard, high production volume icemaker mold with (1) thermoelectric coolers operated in a controlled fashion to heat or cool the mold, (2) a mold temperature sensor (such as a thermistor), and (3) a microcontroller to monitor the process and to adjust the growth rate of ice forming in the mold by adjusting heat transfer rates to optimize particular cooling phases.

Abstract: A warming drawer has a cabinet defining a cavity and a tray that slides into and out of the cavity. An infrared heating lamp is positioned within the cabinet to heat the cavity, and a fan is supported by the cabinet and is configured to circulate air from the cavity to the infrared heating lamp and back into the cavity. A controller is supported by the cabinet and controls the infrared heating lamp and the fan.

Abstract: The present invention is a process and apparatus for the synthesis and growth of single crystals of phosphorus compounds starting with the elemental materials in a single furnace without external exposure. The apparatus of the present invention is a crystal growth furnace heated by RF coils. Inside the furnace is a susceptor for holding a crucible. Above the crucible is selectively positioned a phosphorus improved injector. The non-phosphorus materials are placed in the crucible and melted to a desired temperature. The phosphorus material previously placed within the injector is heated by the radiant heat from the crucible to drive the phosphorus vapor into the melt through a tube. This is closely controlled by noting the temperature within the injector and adjusting the height of the injector above the melt to control the temperature within the phosphorus material. After the formation of the stoichiometric melt, the seed is inserted into the melt for crystal growth if so desired.

Abstract: In the liquid encapsulated Kyropoulos process, the crystal is allowed to grow to the limits of the crucible and remain under the encapsulant fluid. In order to relieve the melt pressure between the growing crystal and the crucible, at least one capillary pressure relief hole is placed in the crucible which allows some of the melt to leak therefrom to relieve pressure.

Abstract: A process for the high pressure synthesis of InP using an independent temperature control of a three zone furnace incorporating a heat pipe provides a stable temperature profile throughout the synthesis cycle. Internal/external pressure control of the quartz ampoule is maintained by use of a water cooled baffle and a temperature/pressure balancing program. Complete synthesis is achieved in less than five hours.

Abstract: A method for synthesizing and growing a single crystal of indium phosphide includes vacuum baking and purifying of elemental indium prior to reacting it with red phosphorus within the same apparatus. The steps growth take place in a vertical apparatus by placing the reaction components within a reaction vessel that is sealed under vacuum after the purification and then heated and cooled within predetermined temperature limits to react indium with red phosphorus to synthesize molten indium phosphide and a single crystal of indium phosphide by cooling the molten indium phosphide within a controlled temperature atmosphere. Excess phosphorus is maintained during growth to eliminate the need for encapsulation of the growth melt.

Abstract: A heat pipe ring for use in a crystal growth furnace is ring-shaped with at least one arm thereon and is constructed as one piece. An RF coil for heating a working fluid in said heat pipe is attached about said arm or an electric current can flow from one arm to an oppositely located arm to heat said body. These rings can be stacked and each may have an independently controlled sources of heat. Each heat pipe ring of the present invention has a wall of three layers of refractory material. In the case of working above 1000.degree. C., the working fluid can be lithium and the wall made of a layer of tungsten, a layer of graphite as a spacer, and a layer of silicon carbide. The internal surface on the tungsten layer is knurled to support capillary action. As a result of these features the heat pipe ring is able to survive high temperatures, greater than 1000.degree. C.

Abstract: A method for producing highly pure indium for subsequent utilization as a reaction component in the synthesis of polycrystalline, indium phosphide which includes the step of heating raw indium under vacuum in an open ended quartz ampoule to a temperature in excess of 850.degree. C. followed by the step of sealing the ampoule while simultaneously maintaining said vacuum within the interior of the ampoule.

Abstract: A method for synthesizing indium phosphide that avoids the explosion problem which often occurs in the synthesis procedures which use the direct reaction of elemental phosphorus and elemental indium to produce indium phosphide. The method utilizes specific heating, pressurizing and cooling parameters to safely produce highly pure, stoichiometric, polycrystalline indium phosphide.