Abstract: A shock absorber is disclosed herein with a frequency sensitive damping force that includes a cylinder containing a damping medium, a piston rod which is axially movable in the cylinder, and a piston assembly arranged for axial movement in the damping medium. The piston assembly is connected to the piston rod and divides the cylinder in a working space on each side of the piston. The piston assembly includes a flow path fluidly coupled to a frequency sensitive element movable relative to the piston assembly.

Abstract: A shock absorber is disclosed herein with a frequency sensitive damping force that includes a cylinder containing a damping medium, a piston rod which is axially movable in the cylinder, and a piston assembly arranged for axial movement in the damping medium. The piston assembly is connected to the piston rod and divides the cylinder in a working space on each side of the piston. The piston assembly includes a flow path fluidly coupled to a frequency sensitive element movable relative to the piston assembly.

Abstract: A shock absorber is disclosed herein with a frequency sensitive damping force that includes a cylinder containing a damping medium, a piston rod which is axially movable in the cylinder, and a piston assembly arranged for axial movement in the damping medium. The piston assembly is connected to the piston rod and divides the cylinder in a working space on each side of the piston. The piston assembly includes a flow path fluidly coupled to a frequency sensitive element movable relative to the piston assembly.

Abstract: A donor layer (17) including an undoped wide bandgap material (14) and an n-type dopant (16) is deposited on a substrate (12) by molecular beam epitaxy (MBE) at a first temperature which is high enough for optimal growth of the donor layer (17). The dopant (16) is silicon or another material which exhibits surface segregation in the wide bandgap material (14) at the first temperature. An undoped spacer layer (18) of the wide bandgap material is deposited on the donor layer (17) at a second temperature which is sufficiently lower than the first temperature that surface segregation of the dopant material from the donor layer (17) into the spacer layer (18) is substantially suppressed. A channel layer (20) of a narrow bandgap material is formed on the spacer layer (18) at a third temperature which is higher than the second temperature and selected for optimal growth of the channel layer (20).

Abstract: There is described a method of closing ends of silicon tubular bodies in which the tube end to be closed is dipped into melt of silicon maintained at substantially the melting temperature of silicon until the end of the tube is heated to the melting point and then withdrawing the tube from the melt with melt temperature sufficiently low to cause freezing of molten silicon at tube end and at temperature and speed sufficient to cause decreasing diameter of the freezing silicon until the desired diameter reduction or closure is obtained and then breaking contact with the melt. Additionally, surface portions may be machined after withdrawal from the melt to allow connections to be made.