Abstract: Fabrication techniques for polishing fibers engaged in grooves on substrates. A protection template assembly is disclosed to protect the unpolished portions of fibers. Chemical mechanical polishing may be used to achieve high fabrication throughput and high polishing uniformity. Optical monitoring may be used to monitor the polishing in real time.

Abstract: Fabrication techniques for polishing fibers engaged in grooves on substrates. A protection template assembly is disclosed to protect the unpolished portions of fibers. Chemical mechanical polishing may be used to achieve high fabrication throughput and high polishing uniformity. Optical monitoring may be used to monitor the polishing in real time.

Abstract: A method of placing a fiber on a substrate includes holding at least one fiber under tension, aligning the held fiber with a groove formed into a substrate, moving the substrate towards the fiber to place the fiber in the groove, fixing the position of the fiber under tension in the groove, and releasing the fiber.

Abstract: Fabrication techniques for polishing fibers engaged in grooves on substrates. A protection template assembly is disclosed to protect the unpolished portions of fibers. Chemical mechanical polishing may be used to achieve high fabrication throughput and high polishing uniformity. Optical monitoring may be used to monitor the polishing in real time.

Abstract: Chemical mechanical planarization or spin etch planarization of surfaces of copper, tantalum and tantalum nitride is accomplished by means of the chemical formulations of the present invention. The chemical formulations may optionally include abrasive particles and which may be chemically reactive or inert. Contact or non-contact CMP may be performed with the present chemical formulations. Substantially 1:1 removal rate selectivity for Cu and Ta/TaN is achieved.

Abstract: A method of placing a fiber on a substrate includes holding at least one fiber under tension, aligning the held fiber with a groove formed into a substrate, moving the substrate towards the fiber to place the fiber in the groove, fixing the position of the fiber under tension in the groove, and releasing the fiber.

Abstract: An apparatus for planarizing or patterning a dielectric film on a substrate is provided. The apparatus includes a press for applying contact pressure to an operably connected compression tool. The compression tool has a working face that is planar or patterned. A controller for regulating the position, timing and force applied by the compression tool to the dielectric film is also provided. There is also provided a support, with an optional workpiece holder for supporting the substrate and dielectric film during contact with the compression tool. Methods of using the apparatus, as well as planarized and/or patterned dielectric films are also provided.

Abstract: Chemical mechanical planarization or spin etch planarization of surfaces of copper, tantalum and tantalum nitride is accomplished by means of the chemical formulations of the present invention. The chemical formulations may optionally include abrasive particles and which may be chemically reactive or inert. Contact or non-contact CMP may be performed with the present chemical formulations. Substantially 1:1 removal rate selectivity for Cu and Ta/TaN is achieved.

Abstract: The present invention describes methods and chemical compositions for the spin etch planarization of surfaces, particularly copper and tantalum. An etching solution is brought into contact with the upper face of a spinning wafer through a nozzle, preferably an oscillating nozzle. The etching solution has a composition that oxidizes the spinning surface, forming a passivation layer thereon. The etching solution further contains reactants for removing the passivation layer exposing the underlying surface to further reaction, leading to the desired etching of the surface. The characteristics of the etching solution are adjusted such that reactant diffusion to lower regions of the surface limits the rate of etching. Faster reaction occurs at higher regions of the surface lying in more rapidly moving etching solution resulting in the desired planarization.

Abstract: An apparatus for planarizing or patterning a dielectric film on a substrate is provided. The apparatus includes a press for applying contact pressure to an operably connected compression tool. The compression tool has a working face that is planar or patterned. A controller for regulating the position, timing and force applied by the compression tool to the dielectric film is also provided. There is also provided a support, with an optional workpiece holder for supporting the substrate and dielectric film during contact with the compression tool. Methods of using the apparatus, as well as planarized and/or patterned dielectric films are also provided.