Abstract: An integrated variable inductor is achieved by placing a second closed-loop inductor immediately above or below a primary inductor. The closed-loop configuration of the second inductor may be broken on-chip by several ways, including use of a transistor to selectively short together both ends of the second inductor. If one wishes to alter the inherent inductance characteristics of the primary inductor, the transistor coupling both ends of the second inductor is actuated. Thus, a current applied to the primary inductor induces a current in the second inductor by inductive coupling. The second current in the second inductor then alters the impedance of the primary inductor by mutual inductance. Thus, the inductance value of the primary inductor is altered. To remove the influence of the second inductor on the primary inductor, the closed-loop configuration of the second inductor is broken.

Abstract: The capacitive loading effects of an ESD circuit having an electrostatic-protection diode are reduced by using a capacitance compensation circuit. Under normal operation when no electrostatic discharge is experienced, the capacitance reduction circuit maintains a reverse bias across the electrostatic-protection diode, which causes the diode's capacitance to be reduced below a predetermined value. When an electrostatic discharged is experienced, the capacitance compensation circuit removes the applied reverse bias, and shunts the electrostatic-protection diode to a power rail.

Abstract: An integrated variable inductor is achieved by placing a second closed-loop inductor immediately above or below a primary inductor. The closed-loop configuration of the second inductor may be broken on-chip by several ways, including use of a transistor to selectively short together both ends of the second inductor. If one wishes to alter the inherent inductance characteristics of the primary inductor, the transistor coupling both ends of the second inductor is actuated. Thus, a current applied to the primary inductor induces a current in the second inductor by inductive coupling. The second current in the second inductor then alters the impedance of the primary inductor by mutual inductance. Thus, the inductance value of the primary inductor is altered. To remove the influence of the second inductor on the primary inductor, the closed-loop configuration of the second inductor is broken.

Abstract: The capacitive loading effects of an ESD circuit having an electrostatic-protection diode are reduced by using a capacitance compensation circuit. Under normal operation when no electrostatic discharge is experienced, the capacitance reduction circuit maintains a reverse bias across the electrostatic-protection diode, which causes the diode's capacitance to be reduced below a predetermined value. When an electrostatic discharged is experienced, the capacitance compensation circuit removes the applied reverse bias, and shunts the electrostatic-protection diode to a power rail.

Abstract: A directory memory system having simultaneous writing and bypass capabilities. A data output bit from a respective memory cell of a memory array is applied to a control input of a first differential amplifier, while comparison input data is applied to inputs of a second differential amplifier. The outputs of corresponding transistors of the two differential amplifiers are connected together. Current switch transistors, operated in response to a bypass select signal, supply current only to one or the other of the two differential amplifiers. The differential output signal produced across the commonly connected outputs of the two differential amplifier circuits is buffered and amplified with a push-pull output circuit.

Abstract: A word redundancy scheme for a high speed RAM where the bit output stage uses on-chip logic. An extra emitter on each of the decoders is utilized including redundant word group decoders. A compare circuit has an output to each of the extra emitters and when the address of a bad bit arrives at the compare circuit it de-selects each of the non-redundant decoders at that address and selects the redundant decoders via the extra emitters. Hence, the redundant decoders replace the decoders of the bad bit position.

Abstract: Disclosed is a logic circuit implemented in complementary field effect transistor (CFET) technology for improving the transient response of CFET circuits and providing a true DOT-OR or DOT-AND logic function. The pull-up circuit includes at least one active device and is placed either in parallel with or replaces the conventional load impedance between a source of potential and the output node.

Abstract: A dual channel high gain differential amplifier utilizing enhancement depletion MOS field effect transistors which exhibits high common mode rejection and fast switching characteristics.